Microstructural characterization of high indium-composition InXGa₁-XN epilayers grown on c-plane sapphire substrates.
Identifieur interne : 000546 ( Main/Exploration ); précédent : 000545; suivant : 000547Microstructural characterization of high indium-composition InXGa₁-XN epilayers grown on c-plane sapphire substrates.
Auteurs : RBID : pubmed:23920194Abstract
The growth of high-quality indium (In)-rich In(X)Ga(1-X)N alloys is technologically important for applications to attain highly efficient green light-emitting diodes and solar cells. However, phase separation and composition modulation in In-rich In(X )Ga(1-X)N alloys are inevitable phenomena that degrade the crystal quality of In-rich In(X)Ga(1-X)N layers. Composition modulations were observed in the In-rich In(X)Ga(1-X)N layers with various In compositions. The In composition modulation in the In X Ga1-X N alloys formed in samples with In compositions exceeding 47%. The misfit strain between the InGaN layer and the GaN buffer retarded the composition modulation, which resulted in the formation of modulated regions 100 nm above the In(0.67)Ga(0.33)N/GaN interface. The composition modulations were formed on the specific crystallographic planes of both the {0001} and {0114} planes of InGaN.
DOI: 10.1017/S143192761301252X
PubMed: 23920194
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However, phase separation and composition modulation in In-rich In(X )Ga(1-X)N alloys are inevitable phenomena that degrade the crystal quality of In-rich In(X)Ga(1-X)N layers. Composition modulations were observed in the In-rich In(X)Ga(1-X)N layers with various In compositions. The In composition modulation in the In X Ga1-X N alloys formed in samples with In compositions exceeding 47%. The misfit strain between the InGaN layer and the GaN buffer retarded the composition modulation, which resulted in the formation of modulated regions 100 nm above the In(0.67)Ga(0.33)N/GaN interface. The composition modulations were formed on the specific crystallographic planes of both the {0001} and {0114} planes of InGaN.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="PubMed-not-MEDLINE"><PMID Version="1">23920194</PMID><DateCreated><Year>2013</Year><Month>08</Month><Day>07</Day></DateCreated><DateCompleted><Year>2014</Year><Month>02</Month><Day>24</Day></DateCompleted><Article PubModel="Print"><Journal><ISSN IssnType="Electronic">1435-8115</ISSN><JournalIssue CitedMedium="Internet"><Volume>19 Suppl 5</Volume><PubDate><Year>2013</Year><Month>Aug</Month></PubDate></JournalIssue><Title>Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada</Title><ISOAbbreviation>Microsc. Microanal.</ISOAbbreviation></Journal><ArticleTitle>Microstructural characterization of high indium-composition InXGa₁-XN epilayers grown on c-plane sapphire substrates.</ArticleTitle><Pagination><MedlinePgn>145-8</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1017/S143192761301252X</ELocationID><Abstract><AbstractText>The growth of high-quality indium (In)-rich In(X)Ga(1-X)N alloys is technologically important for applications to attain highly efficient green light-emitting diodes and solar cells. However, phase separation and composition modulation in In-rich In(X )Ga(1-X)N alloys are inevitable phenomena that degrade the crystal quality of In-rich In(X)Ga(1-X)N layers. Composition modulations were observed in the In-rich In(X)Ga(1-X)N layers with various In compositions. The In composition modulation in the In X Ga1-X N alloys formed in samples with In compositions exceeding 47%. The misfit strain between the InGaN layer and the GaN buffer retarded the composition modulation, which resulted in the formation of modulated regions 100 nm above the In(0.67)Ga(0.33)N/GaN interface. The composition modulations were formed on the specific crystallographic planes of both the {0001} and {0114} planes of InGaN.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Jeong</LastName><ForeName>Myoungho</ForeName><Initials>M</Initials><Affiliation>Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea.</Affiliation></Author><Author ValidYN="Y"><LastName>Lee</LastName><ForeName>Hyo Sung</ForeName><Initials>HS</Initials></Author><Author ValidYN="Y"><LastName>Han</LastName><ForeName>Seok Kyu</ForeName><Initials>SK</Initials></Author><Author ValidYN="Y"><LastName>Eun-Jung-Shin</LastName></Author><Author ValidYN="Y"><LastName>Hong</LastName><ForeName>Soon-Ku</ForeName><Initials>SK</Initials></Author><Author ValidYN="Y"><LastName>Lee</LastName><ForeName>Jeong Yong</ForeName><Initials>JY</Initials></Author><Author ValidYN="Y"><LastName>Park</LastName><ForeName>Yun Chang</ForeName><Initials>YC</Initials></Author><Author ValidYN="Y"><LastName>Yang</LastName><ForeName>Jun-Mo</ForeName><Initials>JM</Initials></Author><Author ValidYN="Y"><LastName>Yao</LastName><ForeName>Takafumi</ForeName><Initials>T</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>Microsc Microanal</MedlineTA><NlmUniqueID>9712707</NlmUniqueID><ISSNLinking>1431-9276</ISSNLinking></MedlineJournalInfo></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="entrez"><Year>2013</Year><Month>8</Month><Day>8</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2013</Year><Month>8</Month><Day>16</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2013</Year><Month>8</Month><Day>16</Day><Hour>6</Hour><Minute>1</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pii">S143192761301252X</ArticleId><ArticleId IdType="doi">10.1017/S143192761301252X</ArticleId><ArticleId IdType="pubmed">23920194</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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