Spectroscopic analysis, structural, microstructural, optical and electrical properties of Zn-doped In2O3 thin films.
Identifieur interne : 000044 ( Main/Exploration ); précédent : 000043; suivant : 000045Spectroscopic analysis, structural, microstructural, optical and electrical properties of Zn-doped In2O3 thin films.
Auteurs : RBID : pubmed:24309179Abstract
In this work, highly transparent conducting un-doped and Zn-doped In2O3 thin films were prepared onto glass substrate using spray pyrolysis method. Structural, morphological, optical and electrical properties were characterized by using XRD, FT-IR, FT-Raman, SEM, AFM, UV-visible, PL and Hall Effect measurement techniques. X-ray diffraction analysis showed that the deposited films were polycrystalline with cubic structure having (222) as preferred orientation. SEM and AFM analyses showed smooth surfaces but the surface roughness of the films increased due to Zn doping. The average optical transmittance of the films was above 94% in the visible range. The optical band gap decreased from 3.62 to 3.28 eV with increasing Zn concentration. The photoluminescence spectra displayed violet-blue emission peaks at around 418-440 nm for all films. The electrical parameters like the resistivity, mobility and carrier concentration were found as 6.4×10(-4) Ω cm, 168 cm(2)/Vs and 9.4×10(20) cm(-3), respectively for In2O3:Zn film deposited at 9 at.%. The present results showed that the obtained thin films could be used as an optoelectronic material.
DOI: 10.1016/j.saa.2013.11.008
PubMed: 24309179
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Spectroscopic analysis, structural, microstructural, optical and electrical properties of Zn-doped In2O3 thin films.</title><author><name sortKey="Jothibas, M" uniqKey="Jothibas M">M Jothibas</name><affiliation wicri:level="1"><nlm:affiliation>Department of Physics, Annamalai University, Annamalai Nagar, Tamil Nadu, India.</nlm:affiliation><country xml:lang="fr">Inde</country><wicri:regionArea>Department of Physics, Annamalai University, Annamalai Nagar, Tamil Nadu</wicri:regionArea></affiliation></author><author><name sortKey="Manoharan, C" uniqKey="Manoharan C">C Manoharan</name><affiliation wicri:level="1"><nlm:affiliation>Department of Physics, Annamalai University, Annamalai Nagar, Tamil Nadu, India. Electronic address: cmanoharan1@rediffmail.com.</nlm:affiliation><country xml:lang="fr">Inde</country><wicri:regionArea>Department of Physics, Annamalai University, Annamalai Nagar, Tamil Nadu</wicri:regionArea></affiliation></author><author><name sortKey="Ramalingam, S" uniqKey="Ramalingam S">S Ramalingam</name><affiliation wicri:level="1"><nlm:affiliation>Department of Physics, A.V.C. College, Mayiladuthurai, Tamil Nadu, India.</nlm:affiliation><country xml:lang="fr">Inde</country><wicri:regionArea>Department of Physics, A.V.C. College, Mayiladuthurai, Tamil Nadu</wicri:regionArea></affiliation></author><author><name sortKey="Dhanapandian, S" uniqKey="Dhanapandian S">S Dhanapandian</name><affiliation wicri:level="1"><nlm:affiliation>Department of Physics, Annamalai University, Annamalai Nagar, Tamil Nadu, India.</nlm:affiliation><country xml:lang="fr">Inde</country><wicri:regionArea>Department of Physics, Annamalai University, Annamalai Nagar, Tamil Nadu</wicri:regionArea></affiliation></author><author><name sortKey="Bououdina, M" uniqKey="Bououdina M">M Bououdina</name><affiliation><nlm:affiliation>Nanotechnology Centre, University of Bahrain, Bahrain; Department of Physics, College of Science, University of Bahrain, Bahrain.</nlm:affiliation><wicri:noCountry code="subField">Bahrain</wicri:noCountry></affiliation></author></titleStmt><publicationStmt><date when="2014">2014</date><idno type="RBID">pubmed:24309179</idno><idno type="pmid">24309179</idno><idno type="doi">10.1016/j.saa.2013.11.008</idno><idno type="wicri:Area/Main/Corpus">000260</idno><idno type="wicri:Area/Main/Curation">000260</idno><idno type="wicri:Area/Main/Exploration">000044</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this work, highly transparent conducting un-doped and Zn-doped In2O3 thin films were prepared onto glass substrate using spray pyrolysis method. Structural, morphological, optical and electrical properties were characterized by using XRD, FT-IR, FT-Raman, SEM, AFM, UV-visible, PL and Hall Effect measurement techniques. X-ray diffraction analysis showed that the deposited films were polycrystalline with cubic structure having (222) as preferred orientation. SEM and AFM analyses showed smooth surfaces but the surface roughness of the films increased due to Zn doping. The average optical transmittance of the films was above 94% in the visible range. The optical band gap decreased from 3.62 to 3.28 eV with increasing Zn concentration. The photoluminescence spectra displayed violet-blue emission peaks at around 418-440 nm for all films. The electrical parameters like the resistivity, mobility and carrier concentration were found as 6.4×10(-4) Ω cm, 168 cm(2)/Vs and 9.4×10(20) cm(-3), respectively for In2O3:Zn film deposited at 9 at.%. The present results showed that the obtained thin films could be used as an optoelectronic material.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="In-Process"><PMID Version="1">24309179</PMID><DateCreated><Year>2014</Year><Month>02</Month><Day>14</Day></DateCreated><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1873-3557</ISSN><JournalIssue CitedMedium="Internet"><Volume>122</Volume><PubDate><Year>2014</Year><Month>Mar</Month><Day>25</Day></PubDate></JournalIssue><Title>Spectrochimica acta. Part A, Molecular and biomolecular spectroscopy</Title><ISOAbbreviation>Spectrochim Acta A Mol Biomol Spectrosc</ISOAbbreviation></Journal><ArticleTitle>Spectroscopic analysis, structural, microstructural, optical and electrical properties of Zn-doped In2O3 thin films.</ArticleTitle><Pagination><MedlinePgn>171-8</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1016/j.saa.2013.11.008</ELocationID><ELocationID EIdType="pii" ValidYN="Y">S1386-1425(13)01313-9</ELocationID><Abstract><AbstractText>In this work, highly transparent conducting un-doped and Zn-doped In2O3 thin films were prepared onto glass substrate using spray pyrolysis method. Structural, morphological, optical and electrical properties were characterized by using XRD, FT-IR, FT-Raman, SEM, AFM, UV-visible, PL and Hall Effect measurement techniques. X-ray diffraction analysis showed that the deposited films were polycrystalline with cubic structure having (222) as preferred orientation. SEM and AFM analyses showed smooth surfaces but the surface roughness of the films increased due to Zn doping. The average optical transmittance of the films was above 94% in the visible range. The optical band gap decreased from 3.62 to 3.28 eV with increasing Zn concentration. The photoluminescence spectra displayed violet-blue emission peaks at around 418-440 nm for all films. The electrical parameters like the resistivity, mobility and carrier concentration were found as 6.4×10(-4) Ω cm, 168 cm(2)/Vs and 9.4×10(20) cm(-3), respectively for In2O3:Zn film deposited at 9 at.%. The present results showed that the obtained thin films could be used as an optoelectronic material.</AbstractText><CopyrightInformation>Crown Copyright © 2013. Published by Elsevier B.V. All rights reserved.</CopyrightInformation></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Jothibas</LastName><ForeName>M</ForeName><Initials>M</Initials><Affiliation>Department of Physics, Annamalai University, Annamalai Nagar, Tamil Nadu, India.</Affiliation></Author><Author ValidYN="Y"><LastName>Manoharan</LastName><ForeName>C</ForeName><Initials>C</Initials><Affiliation>Department of Physics, Annamalai University, Annamalai Nagar, Tamil Nadu, India. Electronic address: cmanoharan1@rediffmail.com.</Affiliation></Author><Author ValidYN="Y"><LastName>Ramalingam</LastName><ForeName>S</ForeName><Initials>S</Initials><Affiliation>Department of Physics, A.V.C. College, Mayiladuthurai, Tamil Nadu, India.</Affiliation></Author><Author ValidYN="Y"><LastName>Dhanapandian</LastName><ForeName>S</ForeName><Initials>S</Initials><Affiliation>Department of Physics, Annamalai University, Annamalai Nagar, Tamil Nadu, India.</Affiliation></Author><Author ValidYN="Y"><LastName>Bououdina</LastName><ForeName>M</ForeName><Initials>M</Initials><Affiliation>Nanotechnology Centre, University of Bahrain, Bahrain; Department of Physics, College of Science, University of Bahrain, Bahrain.</Affiliation></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2013</Year><Month>11</Month><Day>14</Day></ArticleDate></Article><MedlineJournalInfo><Country>England</Country><MedlineTA>Spectrochim Acta A Mol Biomol Spectrosc</MedlineTA><NlmUniqueID>9602533</NlmUniqueID><ISSNLinking>1386-1425</ISSNLinking></MedlineJournalInfo><CitationSubset>IM</CitationSubset><KeywordList Owner="NOTNLM"><Keyword MajorTopicYN="N">Indium oxide</Keyword><Keyword MajorTopicYN="N">Physical and electrical properties</Keyword><Keyword MajorTopicYN="N">Spray pyrolysis</Keyword><Keyword MajorTopicYN="N">Zinc</Keyword></KeywordList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="received"><Year>2013</Year><Month>9</Month><Day>17</Day></PubMedPubDate><PubMedPubDate PubStatus="revised"><Year>2013</Year><Month>10</Month><Day>21</Day></PubMedPubDate><PubMedPubDate PubStatus="accepted"><Year>2013</Year><Month>11</Month><Day>3</Day></PubMedPubDate><PubMedPubDate PubStatus="aheadofprint"><Year>2013</Year><Month>11</Month><Day>14</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2013</Year><Month>12</Month><Day>7</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2013</Year><Month>12</Month><Day>7</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2013</Year><Month>12</Month><Day>7</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pubmed">24309179</ArticleId><ArticleId IdType="pii">S1386-1425(13)01313-9</ArticleId><ArticleId IdType="doi">10.1016/j.saa.2013.11.008</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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