Arsenates < Arsenic < Arsenic Poisoning

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List of bibliographic references

Number of relevant bibliographic references: 39.
[0-20] [0 - 20][0 - 39][20-38][20-40]

Ident.	Authors (with country if any)	Title
000855 (2013)		Enhancement of photoluminescence from GaInNAsSb quantum wells upon annealing: improvement of material quality and carrier collection by the quantum well.
000C25 (2012)		Ultrahigh-sensitivity infrared detection system using an InGaAs p-i-n photodiode with low dielectric polarization noise.
000C97 (2012)		Hybrid organic/inorganic optical up-converter for pixel-less near-infrared imaging.
000E13 (2012)		Synthesis and characterizations of ternary InGaAs nanowires by a two-step growth method for high-performance electronic devices.
001278 (2011)		Semiconductor self-assembled quantum dots: present status and future trends.
001489 (2011)		Comparative study of low temperature growth of InAs and InMnAs quantum dots.
001528 (2010)		Ga and As composition profiles in InP/GaInAs/InP heterostructures--x-ray CTR scattering and cross-sectional STM measurements.
001613 (2011)		Uptake of metals and metalloids by plants growing in a lead-zinc mine area, Northern Vietnam.
001753 (2010)		Continuous-wave subwavelength microdisk lasers at λ = 1.53 µm.
001770 (2010)		Methylated metal(loid) species in humans.
001853 (2010)		Dietary exposure to metals and other elements in the 2006 UK Total Diet Study and some trends over the last 30 years.
001875 (2010)		InGaAs/GaAs saturable absorber for diode-pumped passively Q-switched dual-wavelength Tm:YAP lasers.
001969 (2010)		Low-noise high-speed InGaAs/InP-based single-photon detector.
001B88 (2009)		Comparative studies for Cr4+:YAG crystal and AlGaInAs semiconductor used as a saturable absorber in Q-switched Yb-doped fiber lasers.
002004 (2009)		Site-controlled InGaAs quantum dots with tunable emission energy.
002217 (2008)		Passively mode-locked GaInNAs disk laser operating at 1220 nm.
002327 (2008)		High-quality InAs/InSb nanowire heterostructures grown by metal-organic vapor-phase epitaxy.
002817 (2007)		Doped ZnO nanowires obtained by thermal annealing.
002833 (2007)		Exposure and health risk of gallium, indium, and arsenic from semiconductor manufacturing industry workers.
002862 (2007)		Exposure and health risk of gallium, indium, and arsenic from semiconductor manufacturing industry workers.
002A42 (2006)		Gallium, indium, and arsenic pollution of groundwater from a semiconductor manufacturing area of Taiwan.

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