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Index « Auteurs » - entrée « Lars Samuelson »
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Lars Rebohle < Lars Samuelson < Lars Ulrik R Nordstrøm  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 19.
Ident.Authors (with country if any)Title
000431 (2013) Fluorescent nanowire heterostructures as a versatile tool for biology applications.
000989 (2012) Surface chemistry, structure, and electronic properties from microns to the atomic scale of axially doped semiconductor nanowires.
001019 (2012) Electron trapping in InP nanowire FETs with stacking faults.
001082 (2011) Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study.
001368 (2011) Probing the wurtzite conduction band structure using state filling in highly doped InP nanowires.
001A60 (2010) Probing strain in bent semiconductor nanowires with Raman spectroscopy.
001B94 (2009) Thermal conductance of InAs nanowire composites.
001D04 (2009) Giant, level-dependent g factors in InSb nanowire quantum dots.
001D98 (2009) Growth of vertical InAs nanowires on heterostructured substrates.
001E94 (2009) Catalyst-free nanowires with axial InxGa1-xAs/GaAs heterostructures.
002113 (2009) Friction measurements of InAs nanowires on silicon nitride by AFM manipulation.
002194 (2008) Control of GaP and GaAs nanowire morphology through particle and substrate chemical modification.
002327 (2008) High-quality InAs/InSb nanowire heterostructures grown by metal-organic vapor-phase epitaxy.
002692 (2007) Strain and shape of epitaxial InAs/InP nanowire superlattice measured by grazing incidence X-ray techniques.
002720 (2007) Shear stress measurements on InAs nanowires by AFM manipulation.
002A46 (2006) Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor.
002A76 (2006) Au-free epitaxial growth of InAs nanowires.
002D80 (2005) Tunable double quantum dots in InAs nanowires defined by local gate electrodes.
003131 (2004) Probing of individual semiconductor nanowhiskers by TEM-STM.

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