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Serveur d'exploration sur l'Indium - Exploration (Accueil)

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Royaume-Uni < Russie < République de Chine (Taïwan)  Facettes :

List of bibliographic references indexed by Russie

Number of relevant bibliographic references: 103.
[20-40] [0 - 20][0 - 50][40-60]
Ident.Authors (with country if any)Title
000551 (1988) Direct electrochemical synthesis of complex fluorides of aluminum, gallium, and indium
000558 (1988) Application of DSC for the determination of purity of organic semiconductors
000570 (1987) Superconductivity effects near the metal-insulator transition in granular indium films
000596 (1987) Effect of additions of indium, tin, bismuth, and tungsten oxides on the properties of a silver-cadmium oxide composite
000615 (1986) Strain aging kinetics in indium-based alloys
000627 (1986) Liquid epitaxy growth of InP layers
000679 (1985) Nature of the phase responsible for the formation of SIC-type growth defects during gas-phase epitaxy of III-V compounds
000685 (1985) Hole initiated impact ionization in indium antimonide
000689 (1985) Estimation of the effect of thermal and resonance neutron shielding in activation analysis
000695 (1985) Deflection of IR-radiation in n-InSb in the presence of temperature-electrical instability in a magnetic field
000709 (1984) Quench-condensed indium-hydrogen films. II. Changes in electric and superconducting characteristics near the metal-insulator transition
000710 (1984) Quench-condensed indium-hydrogen films. I. Superconductivity enhancement and metastable state formation
000717 (1984) Liquid-liquid extraction in the absence of usual organic solvents: Application of two-phase aqueous systems based on a water-soluble polymer
000728 (1984) Dependence of the rate of growth of epitaxial layers of indium arsenide on the temperature of deposition in the system in As-AsC13-H2
000733 (1984) Anomalous changes in the properties of tellurium-doped indium arsenide single crystals
000735 (1983) Wettability and contact interaction of gallium-containing melts with non-metallic solids
000761 (1983) Forming characteristics of recombination properties of InSb MOS structures
000767 (1983) Effect of shortwave illumination on the properties of a metal-anode oxide film-indium antimonide structure
000807 (1982) Anisotropy during vapor-phase epitaxy of indium arsenide
000818 (1981) Polarographic determination of metal traces in gallium
000830 (1981) Electrophysical properties of anode oxide films on an indium antimonide surface

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