A systematic study of zone refining of single crystal indium antimonide
Identifieur interne : 000C62 ( Main/Exploration ); précédent : 000C61; suivant : 000C63A systematic study of zone refining of single crystal indium antimonide
Auteurs : RBID : ISTEX:10853_1966_Article_BF00549717.pdfAbstract
The experimental conditions have been determined whereby it is possible, in a closed system, to distil off volatile impurities from an ingot of InSb, and subsequently pass at least 10 to 15 zones through the ingot, whilst constantly maintaining a single crystal structure of a chosen crystallographic orientation. It has been found that preservation of singularity and control of dislocation density can be achieved by selection of: seed orientation and polarity; provision of a containing boat which is not wetted by InSb; careful purification of gas ambient; and the establishment of the correct conditions of temperature gradient at the crystal growing interface. A minimum concentration of ∼3×1013 extrinsic electrons/cm3 was found in uniform specimens substantially uncompensated by volatile impurities. The work provides good evidence that this carrier concentration is not due to Te. The maximum electron mobility at 77° K that could be reproducibly obtained in uniform specimens was 7.5×105 cm2/V sec.
DOI: 10.1007/BF00549717
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<record><TEI><teiHeader><fileDesc><titleStmt><title>A systematic study of zone refining of single crystal indium antimonide</title><author><name>A. R. Murray</name><affiliation wicri:level="1"><mods:affiliation>Texas Instruments Ltd, Bedford, UK</mods:affiliation><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>Texas Instruments Ltd, Bedford</wicri:regionArea><wicri:noRegion>Bedford</wicri:noRegion></affiliation></author><author><name>J. A. Baldrey</name><affiliation wicri:level="1"><mods:affiliation>Texas Instruments Ltd, Bedford, UK</mods:affiliation><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>Texas Instruments Ltd, Bedford</wicri:regionArea><wicri:noRegion>Bedford</wicri:noRegion></affiliation></author><author><name>J. B. Mullin</name><affiliation wicri:level="1"><mods:affiliation>Royal Radar Establishment, Ministry of Aviation, Malvern, Worcs, UK</mods:affiliation><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>Royal Radar Establishment, Ministry of Aviation, Malvern, Worcs</wicri:regionArea><wicri:noRegion>Worcs</wicri:noRegion></affiliation></author><author><name>O. Jones</name><affiliation wicri:level="1"><mods:affiliation>Royal Radar Establishment, Ministry of Aviation, Malvern, Worcs, UK</mods:affiliation><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>Royal Radar Establishment, Ministry of Aviation, Malvern, Worcs</wicri:regionArea><wicri:noRegion>Worcs</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:10853_1966_Article_BF00549717.pdf</idno><date when="1966">1966</date><idno type="doi">10.1007/BF00549717</idno><idno type="wicri:Area/Main/Corpus">000034</idno><idno type="wicri:Area/Main/Curation">000034</idno><idno type="wicri:Area/Main/Exploration">000C62</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">The experimental conditions have been determined whereby it is possible, in a closed system, to distil off volatile impurities from an ingot of InSb, and subsequently pass at least 10 to 15 zones through the ingot, whilst constantly maintaining a single crystal structure of a chosen crystallographic orientation. It has been found that preservation of singularity and control of dislocation density can be achieved by selection of: seed orientation and polarity; provision of a containing boat which is not wetted by InSb; careful purification of gas ambient; and the establishment of the correct conditions of temperature gradient at the crystal growing interface. A minimum concentration of ∼3×1013 extrinsic electrons/cm3 was found in uniform specimens substantially uncompensated by volatile impurities. The work provides good evidence that this carrier concentration is not due to Te. The maximum electron mobility at 77° K that could be reproducibly obtained in uniform specimens was 7.5×105 cm2/V sec.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="060d3d26249a8882020f5eaa6a3ea146e0b71293"><titleInfo lang="eng"><title>A systematic study of zone refining of single crystal indium antimonide</title></titleInfo><name type="personal"><namePart type="given">A. R.</namePart><namePart type="family">Murray</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Texas Instruments Ltd, Bedford, UK</affiliation></name><name type="personal"><namePart type="given">J. A.</namePart><namePart type="family">Baldrey</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Texas Instruments Ltd, Bedford, UK</affiliation></name><name type="personal"><namePart type="given">J. B.</namePart><namePart type="family">Mullin</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Royal Radar Establishment, Ministry of Aviation, Malvern, Worcs, UK</affiliation></name><name type="personal"><namePart type="given">O.</namePart><namePart type="family">Jones</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Royal Radar Establishment, Ministry of Aviation, Malvern, Worcs, UK</affiliation></name><typeOfResource>text</typeOfResource><genre>Papers</genre><genre>Original Paper</genre><originInfo><publisher>Kluwer Academic Publishers, Dordrecht</publisher><dateCreated encoding="w3cdtf">1965-10-06</dateCreated><dateValid encoding="w3cdtf">2004-10-14</dateValid><copyrightDate encoding="w3cdtf">1966</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">The experimental conditions have been determined whereby it is possible, in a closed system, to distil off volatile impurities from an ingot of InSb, and subsequently pass at least 10 to 15 zones through the ingot, whilst constantly maintaining a single crystal structure of a chosen crystallographic orientation. It has been found that preservation of singularity and control of dislocation density can be achieved by selection of: seed orientation and polarity; provision of a containing boat which is not wetted by InSb; careful purification of gas ambient; and the establishment of the correct conditions of temperature gradient at the crystal growing interface. A minimum concentration of ∼3×1013 extrinsic electrons/cm3 was found in uniform specimens substantially uncompensated by volatile impurities. The work provides good evidence that this carrier concentration is not due to Te. The maximum electron mobility at 77° K that could be reproducibly obtained in uniform specimens was 7.5×105 cm2/V sec.</abstract><relatedItem type="series"><titleInfo type="abbreviated"><title>J Mater Sci</title></titleInfo><titleInfo><title>Journal of Materials Science</title><partNumber>Year: 1966</partNumber><partNumber>Volume: 1</partNumber><partNumber>Number: 1</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1966-02-01</dateIssued><copyrightDate encoding="w3cdtf">1966</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Polymer Sciences</topic><topic>Industrial Chemistry/Chemical Engineering</topic><topic>Characterization and Evaluation Materials</topic><topic>Mechanics</topic></subject><identifier type="issn">0022-2461</identifier><identifier type="issn">Electronic: 1573-4803</identifier><identifier type="matrixNumber">10853</identifier><identifier type="local">IssueArticleCount: 12</identifier><recordInfo><recordOrigin>Chapman and Hall, 1966</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF00549717</identifier><identifier type="matrixNumber">Art2</identifier><identifier type="local">BF00549717</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>14</start><end>28</end></extent></part><recordInfo><recordOrigin>Chapman and Hall, 1966</recordOrigin><recordIdentifier>10853_1966_Article_BF00549717.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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