The identification of faulted prismatic dislocation loops in single crystals of undoped InP
Identifieur interne : 000814 ( Main/Exploration ); précédent : 000813; suivant : 000815The identification of faulted prismatic dislocation loops in single crystals of undoped InP
Auteurs : RBID : ISTEX:10853_1981_Article_BF00552972.pdfAbstract
High-voltage transmission electron microscopy has shown that undoped single crystals of indium phosphide, grown by the liquid-encapsulated Czochralski technique, can contain linear arrays of faulted dislocation loops. The plane of the loops is (1 1 0), the fault vector is 1/n [1 1 0] and the Burgers vector of the dislocation loop is 1/n [1 1 0]. A direct correlation has been obtained between these loops and arrays of both ridge and prism features revealed by chemical etching. Sequential use of two etchants has also established a direct link between the faulted dislocation loops and the slip dislocations induced by thermal stresses during crystal growth. A study of a number of crystals grown from differently prepared starting materials suggests that the formation of the loops is associated with departures from stoichiometry and inhibited by the presence of dopant impurities.
DOI: 10.1007/BF00552972
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<record><TEI><teiHeader><fileDesc><titleStmt><title>The identification of faulted prismatic dislocation loops in single crystals of undoped InP</title><author><name>G. T. Brown</name><affiliation wicri:level="1"><mods:affiliation>Royal Signals and Radar Establishment, St. Andrews Road, Malvern, Worcs, UK</mods:affiliation><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>Royal Signals and Radar Establishment, St. Andrews Road, Malvern, Worcs</wicri:regionArea><wicri:noRegion>Worcs</wicri:noRegion></affiliation></author><author><name>B. Cockayne</name><affiliation wicri:level="1"><mods:affiliation>Royal Signals and Radar Establishment, St. Andrews Road, Malvern, Worcs, UK</mods:affiliation><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>Royal Signals and Radar Establishment, St. Andrews Road, Malvern, Worcs</wicri:regionArea><wicri:noRegion>Worcs</wicri:noRegion></affiliation></author><author><name>W. R. MacEwan</name><affiliation wicri:level="1"><mods:affiliation>Royal Signals and Radar Establishment, St. Andrews Road, Malvern, Worcs, UK</mods:affiliation><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>Royal Signals and Radar Establishment, St. Andrews Road, Malvern, Worcs</wicri:regionArea><wicri:noRegion>Worcs</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:10853_1981_Article_BF00552972.pdf</idno><date when="1981">1981</date><idno type="doi">10.1007/BF00552972</idno><idno type="wicri:Area/Main/Corpus">000989</idno><idno type="wicri:Area/Main/Curation">000989</idno><idno type="wicri:Area/Main/Exploration">000814</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">High-voltage transmission electron microscopy has shown that undoped single crystals of indium phosphide, grown by the liquid-encapsulated Czochralski technique, can contain linear arrays of faulted dislocation loops. The plane of the loops is (1 1 0), the fault vector is 1/n [1 1 0] and the Burgers vector of the dislocation loop is 1/n [1 1 0]. A direct correlation has been obtained between these loops and arrays of both ridge and prism features revealed by chemical etching. Sequential use of two etchants has also established a direct link between the faulted dislocation loops and the slip dislocations induced by thermal stresses during crystal growth. A study of a number of crystals grown from differently prepared starting materials suggests that the formation of the loops is associated with departures from stoichiometry and inhibited by the presence of dopant impurities.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="ad4498f90b5ba766a0de3d01b788190ec94ccf4a"><titleInfo lang="eng"><title>The identification of faulted prismatic dislocation loops in single crystals of undoped InP</title></titleInfo><name type="personal"><namePart type="given">G. T.</namePart><namePart type="family">Brown</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Royal Signals and Radar Establishment, St. Andrews Road, Malvern, Worcs, UK</affiliation></name><name type="personal"><namePart type="given">B.</namePart><namePart type="family">Cockayne</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Royal Signals and Radar Establishment, St. Andrews Road, Malvern, Worcs, UK</affiliation></name><name type="personal"><namePart type="given">W. R.</namePart><namePart type="family">MacEwan</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Royal Signals and Radar Establishment, St. Andrews Road, Malvern, Worcs, UK</affiliation></name><typeOfResource>text</typeOfResource><genre>Papers</genre><genre>Original Paper</genre><originInfo><publisher>Kluwer Academic Publishers, Dordrecht</publisher><dateCreated encoding="w3cdtf">1981-02-27</dateCreated><dateCaptured encoding="w3cdtf">1981-03-26</dateCaptured><dateValid encoding="w3cdtf">2004-10-14</dateValid><copyrightDate encoding="w3cdtf">1981</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">High-voltage transmission electron microscopy has shown that undoped single crystals of indium phosphide, grown by the liquid-encapsulated Czochralski technique, can contain linear arrays of faulted dislocation loops. The plane of the loops is (1 1 0), the fault vector is 1/n [1 1 0] and the Burgers vector of the dislocation loop is 1/n [1 1 0]. A direct correlation has been obtained between these loops and arrays of both ridge and prism features revealed by chemical etching. Sequential use of two etchants has also established a direct link between the faulted dislocation loops and the slip dislocations induced by thermal stresses during crystal growth. A study of a number of crystals grown from differently prepared starting materials suggests that the formation of the loops is associated with departures from stoichiometry and inhibited by the presence of dopant impurities.</abstract><relatedItem type="series"><titleInfo type="abbreviated"><title>J Mater Sci</title></titleInfo><titleInfo><title>Journal of Materials Science</title><partNumber>Year: 1981</partNumber><partNumber>Volume: 16</partNumber><partNumber>Number: 10</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1981-10-01</dateIssued><copyrightDate encoding="w3cdtf">1981</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Polymer Sciences</topic><topic>Industrial Chemistry/Chemical Engineering</topic><topic>Characterization and Evaluation Materials</topic><topic>Mechanics</topic></subject><identifier type="issn">0022-2461</identifier><identifier type="issn">Electronic: 1573-4803</identifier><identifier type="matrixNumber">10853</identifier><identifier type="local">IssueArticleCount: 43</identifier><recordInfo><recordOrigin>Chapman and Hall Ltd., 1981</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF00552972</identifier><identifier type="matrixNumber">Art27</identifier><identifier type="local">BF00552972</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>2867</start><end>2876</end></extent></part><recordInfo><recordOrigin>Chapman and Hall Ltd., 1981</recordOrigin><recordIdentifier>10853_1981_Article_BF00552972.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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