Phosphorus-overpressure rapid thermal annealing of indium phosphide
Identifieur interne : 000576 ( Main/Exploration ); précédent : 000575; suivant : 000577Phosphorus-overpressure rapid thermal annealing of indium phosphide
Auteurs : RBID : ISTEX:11664_1987_Article_BF02653367.pdfEnglish descriptors
Abstract
A rapid thermal annealing technique for InP is described in which a controllable phosphorus overpressure, generated by heating red phosphorus, suppresses the dissociation of InP at required annealing temperatures. Two annealing configurations were used to independently study the effects of phosphorus overpressures, anneal temperatures and gas flow rates on the post-anneal electrical and morphological properties of low dose Si-implanted InP:Fe. The advantage of phosphorus overpressure annealing over close-contact annealing is shown, and comparison is made with Si3N4 encapsulated annealing. Gas flow velocities close to the sample are found to significantly affect the surface morphology, and a static layer immediately above the sample is found to be beneficial.
DOI: 10.1007/BF02653367
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<record><TEI><teiHeader><fileDesc><titleStmt><title>Phosphorus-overpressure rapid thermal annealing of indium phosphide</title><author><name>Ananth Dodabalapur</name><affiliation><mods:affiliation>Microelectronics Research Center Department of Electrical and Computer Engineering, The University of Texas at Austin, 78712, Austin, Texas, </mods:affiliation><wicri:noCountry code="subField"></wicri:noCountry></affiliation></author><author><name>C. W. Farley</name><affiliation><mods:affiliation>Microelectronics Research Center Department of Electrical and Computer Engineering, The University of Texas at Austin, 78712, Austin, Texas, </mods:affiliation><wicri:noCountry code="subField"></wicri:noCountry></affiliation></author><author><name>S. D. Lester</name><affiliation><mods:affiliation>Microelectronics Research Center Department of Electrical and Computer Engineering, The University of Texas at Austin, 78712, Austin, Texas, </mods:affiliation><wicri:noCountry code="subField"></wicri:noCountry></affiliation></author><author><name>T. S. Kim</name><affiliation><mods:affiliation>Microelectronics Research Center Department of Electrical and Computer Engineering, The University of Texas at Austin, 78712, Austin, Texas, </mods:affiliation><wicri:noCountry code="subField"></wicri:noCountry></affiliation></author><author><name>B. G. Streetman</name><affiliation><mods:affiliation>Microelectronics Research Center Department of Electrical and Computer Engineering, The University of Texas at Austin, 78712, Austin, Texas, </mods:affiliation><wicri:noCountry code="subField"></wicri:noCountry></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:11664_1987_Article_BF02653367.pdf</idno><date when="1987">1987</date><idno type="doi">10.1007/BF02653367</idno><idno type="wicri:Area/Main/Corpus">000595</idno><idno type="wicri:Area/Main/Curation">000595</idno><idno type="wicri:Area/Main/Exploration">000576</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Hall effect</term><term>InP</term><term>Phosphorus overpressure</term><term>Rapid thermal annealing</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">A rapid thermal annealing technique for InP is described in which a controllable phosphorus overpressure, generated by heating red phosphorus, suppresses the dissociation of InP at required annealing temperatures. Two annealing configurations were used to independently study the effects of phosphorus overpressures, anneal temperatures and gas flow rates on the post-anneal electrical and morphological properties of low dose Si-implanted InP:Fe. The advantage of phosphorus overpressure annealing over close-contact annealing is shown, and comparison is made with Si3N4 encapsulated annealing. Gas flow velocities close to the sample are found to significantly affect the surface morphology, and a static layer immediately above the sample is found to be beneficial.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="6941162c822c025fc4b98c1a8b1bd464718423e1"><titleInfo lang="eng"><title>Phosphorus-overpressure rapid thermal annealing of indium phosphide</title></titleInfo><name type="personal"><namePart type="given">Ananth</namePart><namePart type="family">Dodabalapur</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Microelectronics Research Center Department of Electrical and Computer Engineering, The University of Texas at Austin, 78712, Austin, Texas, </affiliation></name><name type="personal"><namePart type="given">C. W.</namePart><namePart type="family">Farley</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Microelectronics Research Center Department of Electrical and Computer Engineering, The University of Texas at Austin, 78712, Austin, Texas, </affiliation></name><name type="personal"><namePart type="given">S. D.</namePart><namePart type="family">Lester</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Microelectronics Research Center Department of Electrical and Computer Engineering, The University of Texas at Austin, 78712, Austin, Texas, </affiliation></name><name type="personal"><namePart type="given">T. S.</namePart><namePart type="family">Kim</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Microelectronics Research Center Department of Electrical and Computer Engineering, The University of Texas at Austin, 78712, Austin, Texas, </affiliation></name><name type="personal"><namePart type="given">B. G.</namePart><namePart type="family">Streetman</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Microelectronics Research Center Department of Electrical and Computer Engineering, The University of Texas at Austin, 78712, Austin, Texas, </affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, New York</publisher><dateCreated encoding="w3cdtf">1987-02-23</dateCreated><dateValid encoding="w3cdtf">2007-06-17</dateValid><copyrightDate encoding="w3cdtf">1987</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">A rapid thermal annealing technique for InP is described in which a controllable phosphorus overpressure, generated by heating red phosphorus, suppresses the dissociation of InP at required annealing temperatures. Two annealing configurations were used to independently study the effects of phosphorus overpressures, anneal temperatures and gas flow rates on the post-anneal electrical and morphological properties of low dose Si-implanted InP:Fe. The advantage of phosphorus overpressure annealing over close-contact annealing is shown, and comparison is made with Si3N4 encapsulated annealing. Gas flow velocities close to the sample are found to significantly affect the surface morphology, and a static layer immediately above the sample is found to be beneficial.</abstract><subject lang="eng"><genre>Key words</genre><topic>InP</topic><topic>rapid thermal annealing</topic><topic>phosphorus overpressure</topic><topic>Hall effect</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>JEM</title></titleInfo><titleInfo><title>Journal of Electronic Materials</title><partNumber>Year: 1987</partNumber><partNumber>Volume: 16</partNumber><partNumber>Number: 4</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1987-07-01</dateIssued><copyrightDate encoding="w3cdtf">1987</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Optical and Electronic Materials</topic><topic>Characterization and Evaluation of Materials</topic><topic>Solid State Physics and Spectroscopy</topic><topic>Electronics and Microelectronics, Instrumentation</topic></subject><identifier type="issn">0361-5235</identifier><identifier type="issn">Electronic: 1543-186X</identifier><identifier type="matrixNumber">11664</identifier><identifier type="local">IssueArticleCount: 13</identifier><recordInfo><recordOrigin>The Metallurgical of Society of AIME, 1987</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF02653367</identifier><identifier type="matrixNumber">Art10</identifier><identifier type="local">BF02653367</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>283</start><end>288</end></extent></part><recordInfo><recordOrigin>The Metallurgical of Society of AIME, 1987</recordOrigin><recordIdentifier>11664_1987_Article_BF02653367.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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