MOCVD of Ga0.52In0.48P Using Tertiarybutylphosphine
Identifieur interne : 000479 ( Main/Exploration ); précédent : 000478; suivant : 000480MOCVD of Ga0.52In0.48P Using Tertiarybutylphosphine
Auteurs : RBID : ISTEX:11664_1989_Article_BF02655338.pdfEnglish descriptors
Abstract
Tertiarybutylphosphine was explored as a safer alternative to phosphine for the atmospheric pressure chemical vapor deposition of Ga0.52In0.48P on GaAs. For V/III ratios greater than or equal to 50 and growth temperatures between 630 and 700° C, the minority carrier diffusion length of Ga0.52In0.48P grown from t-butylphosphine, approached that of Ga0.52In0.48P grown from phosphine under similar conditions. Compared to deposition with phosphine, with t-butylphosphine the surface morphology was rougher, the carbon and sulfur contamination was greater, and the loss of indium by parasitic reaction was greater. The band gap of the Ga0.52In0.48P at fixed composition varied differently with V/III ratio.
DOI: 10.1007/BF02655338
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<record><TEI><teiHeader><fileDesc><titleStmt><title>MOCVD of Ga0.52In0.48P Using Tertiarybutylphosphine</title><author><name>Sarah R. Kurtz</name><affiliation><mods:affiliation>Solar Energy Research Institute, 80401, Golden, CO, </mods:affiliation><wicri:noCountry code="subField"></wicri:noCountry></affiliation></author><author><name>J. M. Olson</name><affiliation><mods:affiliation>Solar Energy Research Institute, 80401, Golden, CO, </mods:affiliation><wicri:noCountry code="subField"></wicri:noCountry></affiliation></author><author><name>A. Kibbler</name><affiliation><mods:affiliation>Solar Energy Research Institute, 80401, Golden, CO, </mods:affiliation><wicri:noCountry code="subField"></wicri:noCountry></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:11664_1989_Article_BF02655338.pdf</idno><date when="1989">1989</date><idno type="doi">10.1007/BF02655338</idno><idno type="wicri:Area/Main/Corpus">000697</idno><idno type="wicri:Area/Main/Curation">000697</idno><idno type="wicri:Area/Main/Exploration">000479</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>GalnP</term><term>MOCVD</term><term>Photocurrent spectroscopy</term><term>Tertiarybutylphosphine</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">Tertiarybutylphosphine was explored as a safer alternative to phosphine for the atmospheric pressure chemical vapor deposition of Ga0.52In0.48P on GaAs. For V/III ratios greater than or equal to 50 and growth temperatures between 630 and 700° C, the minority carrier diffusion length of Ga0.52In0.48P grown from t-butylphosphine, approached that of Ga0.52In0.48P grown from phosphine under similar conditions. Compared to deposition with phosphine, with t-butylphosphine the surface morphology was rougher, the carbon and sulfur contamination was greater, and the loss of indium by parasitic reaction was greater. The band gap of the Ga0.52In0.48P at fixed composition varied differently with V/III ratio.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="7735de11ede7421d15d863e6566cc70d7a161578"><titleInfo lang="eng"><title>MOCVD of Ga0.52In0.48P Using Tertiarybutylphosphine</title></titleInfo><name type="personal"><namePart type="given">Sarah R.</namePart><namePart type="family">Kurtz</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Solar Energy Research Institute, 80401, Golden, CO, </affiliation></name><name type="personal"><namePart type="given">J. M.</namePart><namePart type="family">Olson</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Solar Energy Research Institute, 80401, Golden, CO, </affiliation></name><name type="personal"><namePart type="given">A.</namePart><namePart type="family">Kibbler</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Solar Energy Research Institute, 80401, Golden, CO, </affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, New York</publisher><dateCreated encoding="w3cdtf">1988-06-23</dateCreated><dateValid encoding="w3cdtf">2007-06-19</dateValid><copyrightDate encoding="w3cdtf">1989</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">Tertiarybutylphosphine was explored as a safer alternative to phosphine for the atmospheric pressure chemical vapor deposition of Ga0.52In0.48P on GaAs. For V/III ratios greater than or equal to 50 and growth temperatures between 630 and 700° C, the minority carrier diffusion length of Ga0.52In0.48P grown from t-butylphosphine, approached that of Ga0.52In0.48P grown from phosphine under similar conditions. Compared to deposition with phosphine, with t-butylphosphine the surface morphology was rougher, the carbon and sulfur contamination was greater, and the loss of indium by parasitic reaction was greater. The band gap of the Ga0.52In0.48P at fixed composition varied differently with V/III ratio.</abstract><subject lang="eng"><genre>Key words</genre><topic>Tertiarybutylphosphine</topic><topic>GalnP</topic><topic>MOCVD</topic><topic>photocurrent spectroscopy</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>JEM</title></titleInfo><titleInfo><title>Journal of Electronic Materials</title><partNumber>Year: 1989</partNumber><partNumber>Volume: 18</partNumber><partNumber>Number: 1</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1989-01-01</dateIssued><copyrightDate encoding="w3cdtf">1989</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Optical and Electronic Materials</topic><topic>Characterization and Evaluation of Materials</topic><topic>Solid State Physics and Spectroscopy</topic><topic>Electronics and Microelectronics, Instrumentation</topic></subject><identifier type="issn">0361-5235</identifier><identifier type="issn">Electronic: 1543-186X</identifier><identifier type="matrixNumber">11664</identifier><identifier type="local">IssueArticleCount: 16</identifier><recordInfo><recordOrigin>The Metallurgical of Society of AIME, 1989</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF02655338</identifier><identifier type="matrixNumber">Art3</identifier><identifier type="local">BF02655338</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>15</start><end>18</end></extent></part><recordInfo><recordOrigin>The Metallurgical of Society of AIME, 1989</recordOrigin><recordIdentifier>11664_1989_Article_BF02655338.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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