Observation of indium-vacancy and indium-hydrogen interactions in Hg1−xCdxTe
Identifieur interne : 000251 ( Main/Exploration ); précédent : 000250; suivant : 000252Observation of indium-vacancy and indium-hydrogen interactions in Hg1−xCdxTe
Auteurs : RBID : ISTEX:11664_1993_Article_BF02817518.pdfEnglish descriptors
Abstract
We have used a nuclear hyperfine technique, perturbed γγ angular correlation (PAC), to study the interactions between111In and native defects and impurities in Hg1−xCdxTe. The PAC technique uses the quadrupole interaction of111In with local electric field gradients to characterize the local environment of this donor dopant. We observed that when In was diffused into a bulk or thin film sample of Hg1−xCdxTe (x=0.21 and x=0.3) at 350°C and the sample was slow cooled, the In occupied sites with near-cubic symmetry, presumably the substitutional metal site. However, when the sample was quenched, a fraction of the In was incorporated into defects characterized by quadrupole interaction strengthsvQ1 andvQ2 and asymmetries of ν1=ν2=0.08. These defects are attributed to the trapping of a metal vacancy at a next-nearest neighbor site to the In atom. The introduction of hydrogen by boiling the samples in distilled water for >4h eliminated the previously observed PAC signals and created defects characterized byvQ3=35 MHz, ν3 <0.1 andvQ4=MHz, ν4 <0.1. These defects are attributed to the decoration of the In-VHg complex by a hydrogen atom. Hall effect measurements showed that hydrogenation increased the hole concentration in p-type quenched samples and even converted n-type indium-doped samples to p-type. A possible model for hydrogen incorporation which includes self-compensation by vacancy creation is suggested.
DOI: 10.1007/BF02817518
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Austin</name><affiliation><mods:affiliation>Department of Physics and Astronomy, University of North Carolina at Chapel Hill, 27599-3255, Chapel Hill, NC, </mods:affiliation><wicri:noCountry code="subField"></wicri:noCountry></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:11664_1993_Article_BF02817518.pdf</idno><date when="1993">1993</date><idno type="doi">10.1007/BF02817518</idno><idno type="wicri:Area/Main/Corpus">000D60</idno><idno type="wicri:Area/Main/Curation">000D60</idno><idno type="wicri:Area/Main/Exploration">000251</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>HgCdTe</term><term>In diffusion in HgCdTe</term><term>In dopant</term><term>Trapping of metal vacanies</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">We have used a nuclear hyperfine technique, perturbed γγ angular correlation (PAC), to study the interactions between111In and native defects and impurities in Hg1−xCdxTe. The PAC technique uses the quadrupole interaction of111In with local electric field gradients to characterize the local environment of this donor dopant. We observed that when In was diffused into a bulk or thin film sample of Hg1−xCdxTe (x=0.21 and x=0.3) at 350°C and the sample was slow cooled, the In occupied sites with near-cubic symmetry, presumably the substitutional metal site. However, when the sample was quenched, a fraction of the In was incorporated into defects characterized by quadrupole interaction strengthsvQ1 andvQ2 and asymmetries of ν1=ν2=0.08. These defects are attributed to the trapping of a metal vacancy at a next-nearest neighbor site to the In atom. The introduction of hydrogen by boiling the samples in distilled water for >4h eliminated the previously observed PAC signals and created defects characterized byvQ3=35 MHz, ν3 <0.1 andvQ4=MHz, ν4 <0.1. These defects are attributed to the decoration of the In-VHg complex by a hydrogen atom. Hall effect measurements showed that hydrogenation increased the hole concentration in p-type quenched samples and even converted n-type indium-doped samples to p-type. A possible model for hydrogen incorporation which includes self-compensation by vacancy creation is suggested.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="ea83d6846b5cbeaff09bb0781e636b5915e533b8"><titleInfo lang="eng"><title>Observation of indium-vacancy and indium-hydrogen interactions in Hg1−xCdxTe</title></titleInfo><name type="personal"><namePart type="given">WM. C.</namePart><namePart type="family">Hughes</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Physics and Astronomy, University of North Carolina at Chapel Hill, 27599-3255, Chapel Hill, NC, </affiliation></name><name type="personal"><namePart type="given">M. L.</namePart><namePart type="family">Swanson</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Physics and Astronomy, University of North Carolina at Chapel Hill, 27599-3255, Chapel Hill, NC, </affiliation></name><name type="personal"><namePart type="given">J. C.</namePart><namePart type="family">Austin</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Physics and Astronomy, University of North Carolina at Chapel Hill, 27599-3255, Chapel Hill, NC, </affiliation></name><typeOfResource>text</typeOfResource><genre>Special Issue Paper</genre><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, New York</publisher><dateCreated encoding="w3cdtf">1992-10-12</dateCreated><dateValid encoding="w3cdtf">2008-01-18</dateValid><copyrightDate encoding="w3cdtf">1993</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">We have used a nuclear hyperfine technique, perturbed γγ angular correlation (PAC), to study the interactions between111In and native defects and impurities in Hg1−xCdxTe. The PAC technique uses the quadrupole interaction of111In with local electric field gradients to characterize the local environment of this donor dopant. We observed that when In was diffused into a bulk or thin film sample of Hg1−xCdxTe (x=0.21 and x=0.3) at 350°C and the sample was slow cooled, the In occupied sites with near-cubic symmetry, presumably the substitutional metal site. However, when the sample was quenched, a fraction of the In was incorporated into defects characterized by quadrupole interaction strengthsvQ1 andvQ2 and asymmetries of ν1=ν2=0.08. These defects are attributed to the trapping of a metal vacancy at a next-nearest neighbor site to the In atom. The introduction of hydrogen by boiling the samples in distilled water for >4h eliminated the previously observed PAC signals and created defects characterized byvQ3=35 MHz, ν3 <0.1 andvQ4=MHz, ν4 <0.1. These defects are attributed to the decoration of the In-VHg complex by a hydrogen atom. Hall effect measurements showed that hydrogenation increased the hole concentration in p-type quenched samples and even converted n-type indium-doped samples to p-type. A possible model for hydrogen incorporation which includes self-compensation by vacancy creation is suggested.</abstract><subject lang="eng"><genre>Key words</genre><topic>HgCdTe</topic><topic>In diffusion in HgCdTe</topic><topic>In dopant</topic><topic>trapping of metal vacanies</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>Journal of Elec Materi</title></titleInfo><titleInfo><title>Journal of Electronic Materials</title><partNumber>Year: 1993</partNumber><partNumber>Volume: 22</partNumber><partNumber>Number: 8</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1993-08-01</dateIssued><copyrightDate encoding="w3cdtf">1993</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Optical and Electronic Materials</topic><topic>Characterization and Evaluation of Materials</topic><topic>Electronics and Microelectronics, Instrumentation</topic><topic>Solid State Physics and Spectroscopy</topic></subject><identifier type="issn">0361-5235</identifier><identifier type="issn">Electronic: 1543-186X</identifier><identifier type="matrixNumber">11664</identifier><identifier type="local">IssueArticleCount: 49</identifier><recordInfo><recordOrigin>The Minerals, Metals & Materials Society, 1993</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF02817518</identifier><identifier type="matrixNumber">Art31</identifier><identifier type="local">BF02817518</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>1011</start><end>1016</end></extent></part><recordInfo><recordOrigin>The Minerals, Metals & Materials Society, 1993</recordOrigin><recordIdentifier>11664_1993_Article_BF02817518.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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