Initial stages in the growth and development of junctions in heteroepitaxy of InP on GaAs
Identifieur interne : 000043 ( Main/Exploration ); précédent : 000042; suivant : 000044Initial stages in the growth and development of junctions in heteroepitaxy of InP on GaAs
Auteurs : RBID : ISTEX:11182_1996_Article_BF02437023.pdfAbstract
The initial stages in the growth of indium phosphide films on gallium arsenide substrates in a chloride gastransport system are investigated by transmission electron microscopy and electron-diffraction and secondaryion mass spectrometry techniques. It is shown that decomposition and/or etching of the surface oxide film and formation of a chemically pure substrate surface occur in the initial stage of the process. The growth islets that form on this surface constitute a solid solution in InP. A model of the process is proposed.
DOI: 10.1007/BF02437023
Links toward previous steps (curation, corpus...)
Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title>Initial stages in the growth and development of junctions in heteroepitaxy of InP on GaAs</title><author><name>I. V. Ivonin</name></author><author><name>L. G. Lavrent'eva</name></author><author><name>V. S. Lukash</name></author><author><name>S. V. Subach</name></author><author><name>E. V. Chernikov</name></author><author><name>A. N. Tarzimyanov</name></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:11182_1996_Article_BF02437023.pdf</idno><date when="1996">1996</date><idno type="doi">10.1007/BF02437023</idno><idno type="wicri:Area/Main/Corpus">000E78</idno><idno type="wicri:Area/Main/Curation">000E78</idno><idno type="wicri:Area/Main/Exploration">000043</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">The initial stages in the growth of indium phosphide films on gallium arsenide substrates in a chloride gastransport system are investigated by transmission electron microscopy and electron-diffraction and secondaryion mass spectrometry techniques. It is shown that decomposition and/or etching of the surface oxide film and formation of a chemically pure substrate surface occur in the initial stage of the process. The growth islets that form on this surface constitute a solid solution in InP. A model of the process is proposed.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="feac91f232011b1e695a0af684e948812d3d7a3e"><titleInfo lang="eng"><title>Initial stages in the growth and development of junctions in heteroepitaxy of InP on GaAs</title></titleInfo><name type="personal"><namePart type="given">I. V.</namePart><namePart type="family">Ivonin</namePart><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">L. G.</namePart><namePart type="family">Lavrent'eva</namePart><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">V. S.</namePart><namePart type="family">Lukash</namePart><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">S. V.</namePart><namePart type="family">Subach</namePart><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">E. V.</namePart><namePart type="family">Chernikov</namePart><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">A. N.</namePart><namePart type="family">Tarzimyanov</namePart><role><roleTerm type="text">author</roleTerm></role></name><typeOfResource>text</typeOfResource><genre>Physics of Semiconductors and Dielectrics</genre><genre>Original Paper</genre><originInfo><publisher>Kluwer Academic Publishers-Consultants Bureau, New York</publisher><dateCreated encoding="w3cdtf">1995-09-19</dateCreated><dateValid encoding="w3cdtf">2006-05-27</dateValid><copyrightDate encoding="w3cdtf">1996</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">The initial stages in the growth of indium phosphide films on gallium arsenide substrates in a chloride gastransport system are investigated by transmission electron microscopy and electron-diffraction and secondaryion mass spectrometry techniques. It is shown that decomposition and/or etching of the surface oxide film and formation of a chemically pure substrate surface occur in the initial stage of the process. The growth islets that form on this surface constitute a solid solution in InP. A model of the process is proposed.</abstract><relatedItem type="series"><titleInfo type="abbreviated"><title>Russ Phys J</title></titleInfo><titleInfo><title>Russian Physics Journal</title><partNumber>Year: 1996</partNumber><partNumber>Volume: 39</partNumber><partNumber>Number: 6</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1996-06-01</dateIssued><copyrightDate encoding="w3cdtf">1996</copyrightDate></originInfo><subject usage="primary"><topic>Physics</topic><topic>Physics, general</topic><topic>Mathematical and Computational Physics</topic><topic>Nuclear Physics, Heavy Ions, Hadrons</topic><topic>Condensed Matter</topic><topic>Applied Optics, Optoelectronics, Optical Devices</topic></subject><identifier type="issn">1064-8887</identifier><identifier type="issn">Electronic: 1573-9228</identifier><identifier type="matrixNumber">11182</identifier><identifier type="local">IssueArticleCount: 16</identifier><recordInfo><recordOrigin>Plenum Publishing Corporation, 1996</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF02437023</identifier><identifier type="matrixNumber">Art10</identifier><identifier type="local">BF02437023</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>571</start><end>575</end></extent></part><recordInfo><recordOrigin>Plenum Publishing Corporation, 1996</recordOrigin><recordIdentifier>11182_1996_Article_BF02437023.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV1/Data/Main/Exploration
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000043 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Exploration/biblio.hfd -nk 000043 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV1
|flux= Main
|étape= Exploration
|type= RBID
|clé= ISTEX:11182_1996_Article_BF02437023.pdf
|texte= Initial stages in the growth and development of junctions in heteroepitaxy of InP on GaAs
}}
| This area was generated with Dilib version V0.5.81. |  |