Metalorganic InP and Inx Ga1-x, Asy P1-y, on InP epitaxy at atmospheric pressure
Identifieur interne : 000E22 ( Main/Corpus ); précédent : 000E21; suivant : 000E23Metalorganic InP and Inx Ga1-x, Asy P1-y, on InP epitaxy at atmospheric pressure
Auteurs : RBID : ISTEX:11664_1984_Article_BF02656656.pdfEnglish descriptors
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Abstract
We present a procedure for the MOVPE of InP as simple as the one currently used for GaAs. InP and InGaAsP alloys are grown on InP substrates using trimethy1indium (TMI), phosphine, trimethylgallium (TMG) and arsine. The choice of carrier gas is important ; a mixture of hydrogen and nitrogen allowed us to grow uniform layers over large areas at atmospheric pressure, without pyrolizing the phosphine or separating the input reactants. Preliminary characterization results are presented.
DOI: 10.1007/BF02656656
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ISTEX:11664_1984_Article_BF02656656.pdfLe document en format XML
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<author><name>A. Mircea</name>
<affiliation><mods:affiliation>Centre National d'Etudes des Télécommunications, Laboratoire de BAGNEUX, 196 rue de Paris, 92220, Bagneux, France</mods:affiliation>
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<author><name>R. Azoulay</name>
<affiliation><mods:affiliation>Centre National d'Etudes des Télécommunications, Laboratoire de BAGNEUX, 196 rue de Paris, 92220, Bagneux, France</mods:affiliation>
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<author><name>L. Dugrand</name>
<affiliation><mods:affiliation>Centre National d'Etudes des Télécommunications, Laboratoire de BAGNEUX, 196 rue de Paris, 92220, Bagneux, France</mods:affiliation>
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<author><name>R. Mellet</name>
<affiliation><mods:affiliation>Centre National d'Etudes des Télécommunications, Laboratoire de BAGNEUX, 196 rue de Paris, 92220, Bagneux, France</mods:affiliation>
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<author><name>K. Rao</name>
<affiliation><mods:affiliation>Centre National d'Etudes des Télécommunications, Laboratoire de BAGNEUX, 196 rue de Paris, 92220, Bagneux, France</mods:affiliation>
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<author><name>M. Sacilotti</name>
<affiliation><mods:affiliation>Centre National d'Etudes des Télécommunications, Laboratoire de BAGNEUX, 196 rue de Paris, 92220, Bagneux, France</mods:affiliation>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Epitaxy</term>
<term>Indium phosphide</term>
<term>Inx Ga1-x Asy P1-y</term>
<term>MOVPE</term>
<term>Metakirganic vapor phase epitaxy</term>
<term>Quaternary alloys</term>
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<front><div type="abstract" xml:lang="eng">We present a procedure for the MOVPE of InP as simple as the one currently used for GaAs. InP and InGaAsP alloys are grown on InP substrates using trimethy1indium (TMI), phosphine, trimethylgallium (TMG) and arsine. The choice of carrier gas is important ; a mixture of hydrogen and nitrogen allowed us to grow uniform layers over large areas at atmospheric pressure, without pyrolizing the phosphine or separating the input reactants. Preliminary characterization results are presented.</div>
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<originInfo><publisher>Springer-Verlag, New York</publisher>
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<abstract lang="eng">We present a procedure for the MOVPE of InP as simple as the one currently used for GaAs. InP and InGaAsP alloys are grown on InP substrates using trimethy1indium (TMI), phosphine, trimethylgallium (TMG) and arsine. The choice of carrier gas is important ; a mixture of hydrogen and nitrogen allowed us to grow uniform layers over large areas at atmospheric pressure, without pyrolizing the phosphine or separating the input reactants. Preliminary characterization results are presented.</abstract>
<subject lang="eng"><genre>Key words</genre>
<topic>MOVPE</topic>
<topic>epitaxy</topic>
<topic>indium phosphide</topic>
<topic>quaternary alloys</topic>
<topic>Inx Ga1-x Asy P1-y</topic>
<topic>metakirganic vapor phase epitaxy</topic>
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<relatedItem type="series"><titleInfo type="abbreviated"><title>JEM</title>
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<titleInfo><title>Journal of Electronic Materials</title>
<partNumber>Year: 1984</partNumber>
<partNumber>Volume: 13</partNumber>
<partNumber>Number: 3</partNumber>
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<genre>Archive Journal</genre>
<originInfo><dateIssued encoding="w3cdtf">1984-05-01</dateIssued>
<copyrightDate encoding="w3cdtf">1984</copyrightDate>
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<subject usage="primary"><topic>Chemistry</topic>
<topic>Optical and Electronic Materials</topic>
<topic>Characterization and Evaluation of Materials</topic>
<topic>Solid State Physics and Spectroscopy</topic>
<topic>Electronics and Microelectronics, Instrumentation</topic>
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<identifier type="issn">0361-5235</identifier>
<identifier type="issn">Electronic: 1543-186X</identifier>
<identifier type="matrixNumber">11664</identifier>
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<part><extent unit="pages"><start>603</start>
<end>620</end>
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