CobaltMaghrebV1, PascalFrancis, Curation, bibRecord, 000180

Effect of annealing on Zn1-xCoxO thin films prepared by electrodeposition

Identifieur interne : 000180 ( PascalFrancis/Curation ); précédent : 000179; suivant : 000181

Effect of annealing on Zn1-xCoxO thin films prepared by electrodeposition

Auteurs : A. El Manouni [Espagne, Maroc] ; M. Tortosa [Espagne] ; F. J. Manjon [Espagne] ; M. Mollar [Espagne] ; B. Mari [Espagne] ; J. F. Sanchez-Royo [Espagne]

Source :

Microelectronics journal [ 0959-8324 ] ; 2009.

RBID : Pascal:09-0135602

Descripteurs français

Pascal (Inist)
- Recuit thermique, Dépôt électrolytique, Caractéristique optique, Propriété chimique, Diffraction RX, Dispersion énergie, Spectrométrie dispersive, Spectre photoélectron RX, Diffusion Raman, Spectrométrie optique, Bande interdite, Bande absorption, Couche mince, Polycristal, Semiconducteur semimagnétique, Fabrication microélectronique.

English descriptors

KwdEn :
- Absorption band, Chemical properties, Dispersive spectrometry, Electrodeposition, Energy dispersion, Energy gap, Microelectronic fabrication, Optical characteristic, Optical spectrometry, Polycrystal, Raman scattering, Semimagnetic semiconductor, Thermal annealing, Thin film, X ray diffraction, X-ray photoelectron spectra.

Abstract

Polycrystalline thin films of Zn_1-xCo_xO with different cobalt (Co) content were grown on indium tin oxide (ITO) substrates by cathodic electrodeposition technique and subsequently annealed in air at 400°C. The effect of annealing in their structural, optical and chemical properties has been characterized by X-ray diffraction (XRD), energy-dispersive spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), Raman scattering and optical spectroscopy. Our measurements indicate that moderate annealing increases the crystal quality of the films. The films are highly transparent in the visible range and evidence an increase of the band gap and of the intensity of three typical Co absorption bands in the visible with the amount of Co. Thermal annealing produces an increase of the intensity of the Co²⁺-related absorption bands revealing that higher amount of Co atoms are occupying Zn sites.

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A03		`1`		`@0 Microelectronics j.`
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A08	`01`	`1`	`ENG`	`@1 Effect of annealing on Zn_1-xCo_xO thin films prepared by electrodeposition`
A09	`01`	`1`	`ENG`	`@1 Wide Band Gap Semiconductor Nanostructures for Optoelectronic Applications`
A11	`01`	`1`		`@1 EL MANOUNI (A.)`
A11	`02`	`1`		`@1 TORTOSA (M.)`
A11	`03`	`1`		`@1 MANJON (F. J.)`
A11	`04`	`1`		`@1 MOLLAR (M.)`
A11	`05`	`1`		`@1 MARI (B.)`
A11	`06`	`1`		`@1 SANCHEZ-ROYO (J. F.)`
A12	`01`	`1`		`@1 LISCHKA (K.) @9 ed.`
A12	`02`	`1`		`@1 WAAG (A.) @9 ed.`
A12	`03`	`1`		`@1 MARIETTE (H.) @9 ed.`
A12	`04`	`1`		`@1 NEUGEBAUER (J.) @9 ed.`
A14	`01`			`@1 Departament de Física Aplicada-ETSED, Universitat Politècnica de València, Camí de Vera, s/n @2 46022 València @3 ESP @Z 1 aut. @Z 2 aut. @Z 3 aut. @Z 4 aut. @Z 5 aut.`
A14	`02`			`@1 Departament de Physique, Faculté des Sciences et Techniques, Université Hassan II @2 Mohammedia @3 MAR @Z 1 aut.`
A14	`03`			`@1 Departament de Física Aplicada-ICMUV, Universitat de València, C/Dr. Moliner 50 @2 46100 Burjassot, Valènda @3 ESP @Z 6 aut.`
A15	`01`			`@1 Department of Physics, University of Paderborn @2 33098 Paderborn @3 DEU @Z 1 aut. @Z 2 aut. @Z 3 aut. @Z 4 aut.`
A20				`@1 268-271`
A21				`@1 2009`
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C01	`01`		`ENG`	@0 Polycrystalline thin films of Zn_1-xCo_xO with different cobalt (Co) content were grown on indium tin oxide (ITO) substrates by cathodic electrodeposition technique and subsequently annealed in air at 400°C. The effect of annealing in their structural, optical and chemical properties has been characterized by X-ray diffraction (XRD), energy-dispersive spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), Raman scattering and optical spectroscopy. Our measurements indicate that moderate annealing increases the crystal quality of the films. The films are highly transparent in the visible range and evidence an increase of the band gap and of the intensity of three typical Co absorption bands in the visible with the amount of Co. Thermal annealing produces an increase of the intensity of the Co²⁺-related absorption bands revealing that higher amount of Co atoms are occupying Zn sites.
C02	`01`	`X`		`@0 001D03F17`
C03	`01`	`X`	`FRE`	`@0 Recuit thermique @5 01`
C03	`01`	`X`	`ENG`	`@0 Thermal annealing @5 01`
C03	`01`	`X`	`SPA`	`@0 Recocido térmico @5 01`
C03	`02`	`X`	`FRE`	`@0 Dépôt électrolytique @5 02`
C03	`02`	`X`	`ENG`	`@0 Electrodeposition @5 02`
C03	`02`	`X`	`SPA`	`@0 Depósito electrolítico @5 02`
C03	`03`	`X`	`FRE`	`@0 Caractéristique optique @5 03`
C03	`03`	`X`	`ENG`	`@0 Optical characteristic @5 03`
C03	`03`	`X`	`SPA`	`@0 Característica óptica @5 03`
C03	`04`	`X`	`FRE`	`@0 Propriété chimique @5 04`
C03	`04`	`X`	`ENG`	`@0 Chemical properties @5 04`
C03	`04`	`X`	`SPA`	`@0 Propiedad química @5 04`
C03	`05`	`X`	`FRE`	`@0 Diffraction RX @5 05`
C03	`05`	`X`	`ENG`	`@0 X ray diffraction @5 05`
C03	`05`	`X`	`SPA`	`@0 Difracción RX @5 05`
C03	`06`	`X`	`FRE`	`@0 Dispersion énergie @5 06`
C03	`06`	`X`	`ENG`	`@0 Energy dispersion @5 06`
C03	`06`	`X`	`SPA`	`@0 Dispersión energía @5 06`
C03	`07`	`X`	`FRE`	`@0 Spectrométrie dispersive @5 07`
C03	`07`	`X`	`ENG`	`@0 Dispersive spectrometry @5 07`
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C03	`09`	`X`	`ENG`	`@0 Raman scattering @5 09`
C03	`09`	`X`	`SPA`	`@0 Difusión Ramán @5 09`
C03	`10`	`X`	`FRE`	`@0 Spectrométrie optique @5 10`
C03	`10`	`X`	`ENG`	`@0 Optical spectrometry @5 10`
C03	`10`	`X`	`SPA`	`@0 Espectrometría óptica @5 10`
C03	`11`	`X`	`FRE`	`@0 Bande interdite @5 11`
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C03	`12`	`X`	`FRE`	`@0 Bande absorption @5 12`
C03	`12`	`X`	`ENG`	`@0 Absorption band @5 12`
C03	`12`	`X`	`SPA`	`@0 Banda absorción @5 12`
C03	`13`	`X`	`FRE`	`@0 Couche mince @5 22`
C03	`13`	`X`	`ENG`	`@0 Thin film @5 22`
C03	`13`	`X`	`SPA`	`@0 Capa fina @5 22`
C03	`14`	`X`	`FRE`	`@0 Polycristal @5 23`
C03	`14`	`X`	`ENG`	`@0 Polycrystal @5 23`
C03	`14`	`X`	`SPA`	`@0 Policristal @5 23`
C03	`15`	`X`	`FRE`	`@0 Semiconducteur semimagnétique @5 24`
C03	`15`	`X`	`ENG`	`@0 Semimagnetic semiconductor @5 24`
C03	`15`	`X`	`SPA`	`@0 Semiconductor semimagnético @5 24`
C03	`16`	`X`	`FRE`	`@0 Fabrication microélectronique @5 31`
C03	`16`	`X`	`ENG`	`@0 Microelectronic fabrication @5 31`
C03	`16`	`X`	`SPA`	`@0 Fabricación microeléctrica @5 31`
N21				`@1 096`
N44	`01`			`@1 OTO`
N82				`@1 OTO`

A30	`01`	`1`	`ENG`	`@1 Symposium G of the E-MRS conference @3 Strasbourg FRA @4 2008-05`

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Pascal:09-0135602

Le document en format XML

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<term>Diffraction RX</term>
<term>Dispersion énergie</term>
<term>Spectrométrie dispersive</term>
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<term>Diffusion Raman</term>
<term>Spectrométrie optique</term>
<term>Bande interdite</term>
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<front><div type="abstract" xml:lang="en">Polycrystalline thin films of Zn<sub>1-x</sub>
Co<sub>x</sub>
O with different cobalt (Co) content were grown on indium tin oxide (ITO) substrates by cathodic electrodeposition technique and subsequently annealed in air at 400°C. The effect of annealing in their structural, optical and chemical properties has been characterized by X-ray diffraction (XRD), energy-dispersive spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), Raman scattering and optical spectroscopy. Our measurements indicate that moderate annealing increases the crystal quality of the films. The films are highly transparent in the visible range and evidence an increase of the band gap and of the intensity of three typical Co absorption bands in the visible with the amount of Co. Thermal annealing produces an increase of the intensity of the Co<sup>2+</sup>
-related absorption bands revealing that higher amount of Co atoms are occupying Zn sites.</div>
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O thin films prepared by electrodeposition</s1>
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<fA09 i1="01" i2="1" l="ENG"><s1>Wide Band Gap Semiconductor Nanostructures for Optoelectronic Applications</s1>
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<fA11 i1="01" i2="1"><s1>EL MANOUNI (A.)</s1>
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<fA14 i1="01"><s1>Departament de Física Aplicada-ETSED, Universitat Politècnica de València, Camí de Vera, s/n</s1>
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<fA14 i1="02"><s1>Departament de Physique, Faculté des Sciences et Techniques, Université Hassan II</s1>
<s2>Mohammedia</s2>
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<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Departament de Física Aplicada-ICMUV, Universitat de València, C/Dr. Moliner 50</s1>
<s2>46100 Burjassot, Valènda</s2>
<s3>ESP</s3>
<sZ>6 aut.</sZ>
</fA14>
<fA15 i1="01"><s1>Department of Physics, University of Paderborn</s1>
<s2>33098 Paderborn</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</fA15>
<fA20><s1>268-271</s1>
</fA20>
<fA21><s1>2009</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>13880</s2>
<s5>354000184209690190</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2009 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>31 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>09-0135602</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Microelectronics journal</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Polycrystalline thin films of Zn<sub>1-x</sub>
Co<sub>x</sub>
O with different cobalt (Co) content were grown on indium tin oxide (ITO) substrates by cathodic electrodeposition technique and subsequently annealed in air at 400°C. The effect of annealing in their structural, optical and chemical properties has been characterized by X-ray diffraction (XRD), energy-dispersive spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), Raman scattering and optical spectroscopy. Our measurements indicate that moderate annealing increases the crystal quality of the films. The films are highly transparent in the visible range and evidence an increase of the band gap and of the intensity of three typical Co absorption bands in the visible with the amount of Co. Thermal annealing produces an increase of the intensity of the Co<sup>2+</sup>
-related absorption bands revealing that higher amount of Co atoms are occupying Zn sites.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03F17</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Recuit thermique</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Thermal annealing</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Recocido térmico</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Dépôt électrolytique</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Electrodeposition</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Depósito electrolítico</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Caractéristique optique</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Optical characteristic</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Característica óptica</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Propriété chimique</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Chemical properties</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Propiedad química</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Diffraction RX</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>X ray diffraction</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Difracción RX</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Dispersion énergie</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Energy dispersion</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Dispersión energía</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Spectrométrie dispersive</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Dispersive spectrometry</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Espectrometría dispersiva</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Spectre photoélectron RX</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>X-ray photoelectron spectra</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Diffusion Raman</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Raman scattering</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Difusión Ramán</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Spectrométrie optique</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Optical spectrometry</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Espectrometría óptica</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Bande interdite</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Energy gap</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Banda prohibida</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Bande absorption</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Absorption band</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Banda absorción</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Couche mince</s0>
<s5>22</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Thin film</s0>
<s5>22</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Capa fina</s0>
<s5>22</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Polycristal</s0>
<s5>23</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Polycrystal</s0>
<s5>23</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Policristal</s0>
<s5>23</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Semiconducteur semimagnétique</s0>
<s5>24</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Semimagnetic semiconductor</s0>
<s5>24</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Semiconductor semimagnético</s0>
<s5>24</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Fabrication microélectronique</s0>
<s5>31</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Microelectronic fabrication</s0>
<s5>31</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Fabricación microeléctrica</s0>
<s5>31</s5>
</fC03>
<fN21><s1>096</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>Symposium G of the E-MRS conference</s1>
<s3>Strasbourg FRA</s3>
<s4>2008-05</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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	Serveur d'exploration sur le cobalt au Maghreb
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Effect of annealing on Zn1-xCoxO thin films prepared by electrodeposition

Effect of annealing on Zn1-xCoxO thin films prepared by electrodeposition

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