CobaltMaghrebV1, PascalFrancis, Corpus, bibRecord, 000140

Preparation and characterization of n-type conductive (Al, Co) co-doped ZnO thin films deposited by sputtering from aerogel nanopowders

Identifieur interne : 000140 ( PascalFrancis/Corpus ); précédent : 000139; suivant : 000141

Preparation and characterization of n-type conductive (Al, Co) co-doped ZnO thin films deposited by sputtering from aerogel nanopowders

Auteurs : L. El Mir ; Z. Ben Ayadi ; M. Saadoun ; K. Djessas ; H. J. Von Bardeleben ; S. Alaya

Source :

Applied surface science [ 0169-4332 ] ; 2007.

RBID : Pascal:08-0064615

Descripteurs français

Pascal (Inist)
- Préparation, Semiconducteur type n, Matériau dopé, Couche mince, Pulvérisation irradiation, Croissance film, Pulvérisation cathodique, Magnétron, Nanocristal, Nanoparticule, Procédé sol gel, Facteur transmission, Conductivité électrique, Oxyde de zinc, Aérogel, Nanostructure, Microscopie électronique transmission, Codopage, Addition aluminium, Addition cobalt, Microscopie électronique balayage, O Zn, ZnO:Al Co, 8115C, 6855J, 7361, 7820C.

English descriptors

KwdEn :
- Aerogels, Aluminium additions, Cathode sputtering, Cobalt additions, Codoping, Doped materials, Electrical conductivity, Film growth, Magnetrons, Nanocrystal, Nanoparticles, Nanostructures, Preparation, Scanning electron microscopy, Sol-gel process, Sputtering, Thin films, Transmission electron microscopy, Transmittance, Zinc oxide, n type semiconductor.

Abstract

Highly transparent, n-type conducting ZnO thin films were obtained by low temperature magnetron sputtering of (Co, Al) co-doped ZnO nanocrystalline aerogels. The nanoparticles of ∼30 nm size were synthesized by a sol-gel method using supercritical drying in ethyl alcohol. The structural, optical and electrical properties of the films were investigated. The ZnO films were polycrystalline textured, preferentially oriented with the (0 0 2) crystallographic direction normal to the film plane. The films show within the visible wavelength region an optical transmittance of more than 90% and a low electrical resistivity of 3.5 x 10^-4 Ω cm at room temperature.

Notice en format standard (ISO 2709)

Pour connaître la documentation sur le format Inist Standard.

A01	`01`	`1`		`@0 0169-4332`
A03		`1`		`@0 Appl. surf. sci.`
A05				`@2 254`
A06				`@2 2`
A08	`01`	`1`	`ENG`	`@1 Preparation and characterization of n-type conductive (Al, Co) co-doped ZnO thin films deposited by sputtering from aerogel nanopowders`
A11	`01`	`1`		`@1 EL MIR (L.)`
A11	`02`	`1`		`@1 BEN AYADI (Z.)`
A11	`03`	`1`		`@1 SAADOUN (M.)`
A11	`04`	`1`		`@1 DJESSAS (K.)`
A11	`05`	`1`		`@1 VON BARDELEBEN (H. J.)`
A11	`06`	`1`		`@1 ALAYA (S.)`
A14	`01`			`@1 Laboratoire de physique des matériaux et des nanomatériaux appliquée à l'environnement, faculté des sciences de Gabès, Cité Erriadh Manara Zrig @2 6072 Gabès @3 TUN @Z 1 aut. @Z 2 aut. @Z 3 aut. @Z 6 aut.`
A14	`02`			`@1 Laboratoire de mathématiques et physique des systèmes (MEPS), université de Perpignan, 52, avenue Paul Alduy @2 66860 Perpignan @3 FRA @Z 4 aut.`
A14	`03`			`@1 Institut des nanosciences de Paris (INSP) UMR CNRS 7588, universités Pierre-et-Marie-Curie (Paris 6) et Denis-Diderot (Paris 7), campus Boucicaut, 140, rue de Lourmel @2 75015 Paris @3 FRA @Z 5 aut.`
A20				`@1 570-573`
A21				`@1 2007`
A23	`01`			`@0 ENG`
A43	`01`			`@1 INIST @2 16002 @5 354000174202590250`
A44				`@0 0000 @1 © 2008 INIST-CNRS. All rights reserved.`
A45				`@0 28 ref.`
A47	`01`	`1`		`@0 08-0064615`
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A61				`@0 A`
A64	`01`	`1`		`@0 Applied surface science`
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C01	`01`		`ENG`	@0 Highly transparent, n-type conducting ZnO thin films were obtained by low temperature magnetron sputtering of (Co, Al) co-doped ZnO nanocrystalline aerogels. The nanoparticles of ∼30 nm size were synthesized by a sol-gel method using supercritical drying in ethyl alcohol. The structural, optical and electrical properties of the films were investigated. The ZnO films were polycrystalline textured, preferentially oriented with the (0 0 2) crystallographic direction normal to the film plane. The films show within the visible wavelength region an optical transmittance of more than 90% and a low electrical resistivity of 3.5 x 10^-4 Ω cm at room temperature.
C02	`01`	`3`		`@0 001B80A15C`
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C02	`03`	`3`		`@0 001B70C61`
C02	`04`	`3`		`@0 001B70H20C`
C03	`01`	`X`	`FRE`	`@0 Préparation @5 01`
C03	`01`	`X`	`ENG`	`@0 Preparation @5 01`
C03	`01`	`X`	`SPA`	`@0 Preparación @5 01`
C03	`02`	`3`	`FRE`	`@0 Semiconducteur type n @5 02`
C03	`02`	`3`	`ENG`	`@0 n type semiconductor @5 02`
C03	`03`	`3`	`FRE`	`@0 Matériau dopé @5 03`
C03	`03`	`3`	`ENG`	`@0 Doped materials @5 03`
C03	`04`	`3`	`FRE`	`@0 Couche mince @5 04`
C03	`04`	`3`	`ENG`	`@0 Thin films @5 04`
C03	`05`	`3`	`FRE`	`@0 Pulvérisation irradiation @5 05`
C03	`05`	`3`	`ENG`	`@0 Sputtering @5 05`
C03	`06`	`3`	`FRE`	`@0 Croissance film @5 06`
C03	`06`	`3`	`ENG`	`@0 Film growth @5 06`
C03	`07`	`3`	`FRE`	`@0 Pulvérisation cathodique @5 07`
C03	`07`	`3`	`ENG`	`@0 Cathode sputtering @5 07`
C03	`08`	`3`	`FRE`	`@0 Magnétron @5 08`
C03	`08`	`3`	`ENG`	`@0 Magnetrons @5 08`
C03	`09`	`X`	`FRE`	`@0 Nanocristal @5 09`
C03	`09`	`X`	`ENG`	`@0 Nanocrystal @5 09`
C03	`09`	`X`	`SPA`	`@0 Nanocristal @5 09`
C03	`10`	`3`	`FRE`	`@0 Nanoparticule @5 10`
C03	`10`	`3`	`ENG`	`@0 Nanoparticles @5 10`
C03	`11`	`3`	`FRE`	`@0 Procédé sol gel @5 11`
C03	`11`	`3`	`ENG`	`@0 Sol-gel process @5 11`
C03	`12`	`X`	`FRE`	`@0 Facteur transmission @5 13`
C03	`12`	`X`	`ENG`	`@0 Transmittance @5 13`
C03	`12`	`X`	`SPA`	`@0 Factor transmisión @5 13`
C03	`13`	`3`	`FRE`	`@0 Conductivité électrique @5 14`
C03	`13`	`3`	`ENG`	`@0 Electrical conductivity @5 14`
C03	`14`	`X`	`FRE`	`@0 Oxyde de zinc @5 15`
C03	`14`	`X`	`ENG`	`@0 Zinc oxide @5 15`
C03	`14`	`X`	`SPA`	`@0 Zinc óxido @5 15`
C03	`15`	`3`	`FRE`	`@0 Aérogel @5 16`
C03	`15`	`3`	`ENG`	`@0 Aerogels @5 16`
C03	`16`	`3`	`FRE`	`@0 Nanostructure @5 22`
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C03	`17`	`3`	`FRE`	`@0 Microscopie électronique transmission @5 23`
C03	`17`	`3`	`ENG`	`@0 Transmission electron microscopy @5 23`
C03	`18`	`X`	`FRE`	`@0 Codopage @5 24`
C03	`18`	`X`	`ENG`	`@0 Codoping @5 24`
C03	`18`	`X`	`SPA`	`@0 Codrogado @5 24`
C03	`19`	`3`	`FRE`	`@0 Addition aluminium @5 25`
C03	`19`	`3`	`ENG`	`@0 Aluminium additions @5 25`
C03	`20`	`3`	`FRE`	`@0 Addition cobalt @5 26`
C03	`20`	`3`	`ENG`	`@0 Cobalt additions @5 26`
C03	`21`	`3`	`FRE`	`@0 Microscopie électronique balayage @5 27`
C03	`21`	`3`	`ENG`	`@0 Scanning electron microscopy @5 27`
C03	`22`	`3`	`FRE`	`@0 O Zn @4 INC @5 32`
C03	`23`	`3`	`FRE`	`@0 ZnO:Al Co @4 INC @5 33`
C03	`24`	`3`	`FRE`	`@0 8115C @2 PAC @4 INC @5 45`
C03	`25`	`3`	`FRE`	`@0 6855J @2 PAC @4 INC @5 46`
C03	`26`	`3`	`FRE`	`@0 7361 @2 PAC @4 INC @5 47`
C03	`27`	`3`	`FRE`	`@0 7820C @2 PAC @4 INC @5 48`
C07	`01`	`3`	`FRE`	`@0 Composé de métal de transition @5 62`
C07	`01`	`3`	`ENG`	`@0 Transition element compounds @5 62`
C07	`02`	`3`	`FRE`	`@0 Composé minéral @5 63`
C07	`02`	`3`	`ENG`	`@0 Inorganic compounds @5 63`
N21				`@1 035`

Format Inist (serveur)

NO :	PASCAL 08-0064615 INIST
ET :	Preparation and characterization of n-type conductive (Al, Co) co-doped ZnO thin films deposited by sputtering from aerogel nanopowders
AU :	EL MIR (L.); BEN AYADI (Z.); SAADOUN (M.); DJESSAS (K.); VON BARDELEBEN (H. J.); ALAYA (S.)
AF :	Laboratoire de physique des matériaux et des nanomatériaux appliquée à l'environnement, faculté des sciences de Gabès, Cité Erriadh Manara Zrig/6072 Gabès/Tunisie (1 aut., 2 aut., 3 aut., 6 aut.); Laboratoire de mathématiques et physique des systèmes (MEPS), université de Perpignan, 52, avenue Paul Alduy/66860 Perpignan/France (4 aut.); Institut des nanosciences de Paris (INSP) UMR CNRS 7588, universités Pierre-et-Marie-Curie (Paris 6) et Denis-Diderot (Paris 7), campus Boucicaut, 140, rue de Lourmel/75015 Paris/France (5 aut.)
DT :	Publication en série; Niveau analytique
SO :	Applied surface science; ISSN 0169-4332; Pays-Bas; Da. 2007; Vol. 254; No. 2; Pp. 570-573; Bibl. 28 ref.
LA :	Anglais
EA :	Highly transparent, n-type conducting ZnO thin films were obtained by low temperature magnetron sputtering of (Co, Al) co-doped ZnO nanocrystalline aerogels. The nanoparticles of ∼30 nm size were synthesized by a sol-gel method using supercritical drying in ethyl alcohol. The structural, optical and electrical properties of the films were investigated. The ZnO films were polycrystalline textured, preferentially oriented with the (0 0 2) crystallographic direction normal to the film plane. The films show within the visible wavelength region an optical transmittance of more than 90% and a low electrical resistivity of 3.5 x 10^-4 Ω cm at room temperature.
CC :	001B80A15C; 001B60H55J; 001B70C61; 001B70H20C
FD :	Préparation; Semiconducteur type n; Matériau dopé; Couche mince; Pulvérisation irradiation; Croissance film; Pulvérisation cathodique; Magnétron; Nanocristal; Nanoparticule; Procédé sol gel; Facteur transmission; Conductivité électrique; Oxyde de zinc; Aérogel; Nanostructure; Microscopie électronique transmission; Codopage; Addition aluminium; Addition cobalt; Microscopie électronique balayage; O Zn; ZnO:Al Co; 8115C; 6855J; 7361; 7820C
FG :	Composé de métal de transition; Composé minéral
ED :	Preparation; n type semiconductor; Doped materials; Thin films; Sputtering; Film growth; Cathode sputtering; Magnetrons; Nanocrystal; Nanoparticles; Sol-gel process; Transmittance; Electrical conductivity; Zinc oxide; Aerogels; Nanostructures; Transmission electron microscopy; Codoping; Aluminium additions; Cobalt additions; Scanning electron microscopy
EG :	Transition element compounds; Inorganic compounds
SD :	Preparación; Nanocristal; Factor transmisión; Zinc óxido; Codrogado
LO :	INIST-16002.354000174202590250
ID :	08-0064615

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Pascal:08-0064615

Le document en format XML

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<term>Codoping</term>
<term>Doped materials</term>
<term>Electrical conductivity</term>
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<term>Scanning electron microscopy</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Préparation</term>
<term>Semiconducteur type n</term>
<term>Matériau dopé</term>
<term>Couche mince</term>
<term>Pulvérisation irradiation</term>
<term>Croissance film</term>
<term>Pulvérisation cathodique</term>
<term>Magnétron</term>
<term>Nanocristal</term>
<term>Nanoparticule</term>
<term>Procédé sol gel</term>
<term>Facteur transmission</term>
<term>Conductivité électrique</term>
<term>Oxyde de zinc</term>
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<term>Microscopie électronique transmission</term>
<term>Codopage</term>
<term>Addition aluminium</term>
<term>Addition cobalt</term>
<term>Microscopie électronique balayage</term>
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<front><div type="abstract" xml:lang="en">Highly transparent, n-type conducting ZnO thin films were obtained by low temperature magnetron sputtering of (Co, Al) co-doped ZnO nanocrystalline aerogels. The nanoparticles of ∼30 nm size were synthesized by a sol-gel method using supercritical drying in ethyl alcohol. The structural, optical and electrical properties of the films were investigated. The ZnO films were polycrystalline textured, preferentially oriented with the (0 0 2) crystallographic direction normal to the film plane. The films show within the visible wavelength region an optical transmittance of more than 90% and a low electrical resistivity of 3.5 x 10<sup>-4</sup>
 Ω cm at room temperature.</div>
</front>
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<fA11 i1="01" i2="1"><s1>EL MIR (L.)</s1>
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<fA11 i1="02" i2="1"><s1>BEN AYADI (Z.)</s1>
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<fA11 i1="03" i2="1"><s1>SAADOUN (M.)</s1>
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<fA11 i1="05" i2="1"><s1>VON BARDELEBEN (H. J.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>ALAYA (S.)</s1>
</fA11>
<fA14 i1="01"><s1>Laboratoire de physique des matériaux et des nanomatériaux appliquée à l'environnement, faculté des sciences de Gabès, Cité Erriadh Manara Zrig</s1>
<s2>6072 Gabès</s2>
<s3>TUN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Laboratoire de mathématiques et physique des systèmes (MEPS), université de Perpignan, 52, avenue Paul Alduy</s1>
<s2>66860 Perpignan</s2>
<s3>FRA</s3>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Institut des nanosciences de Paris (INSP) UMR CNRS 7588, universités Pierre-et-Marie-Curie (Paris 6) et Denis-Diderot (Paris 7), campus Boucicaut, 140, rue de Lourmel</s1>
<s2>75015 Paris</s2>
<s3>FRA</s3>
<sZ>5 aut.</sZ>
</fA14>
<fA20><s1>570-573</s1>
</fA20>
<fA21><s1>2007</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>16002</s2>
<s5>354000174202590250</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2008 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>28 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>08-0064615</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Applied surface science</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Highly transparent, n-type conducting ZnO thin films were obtained by low temperature magnetron sputtering of (Co, Al) co-doped ZnO nanocrystalline aerogels. The nanoparticles of ∼30 nm size were synthesized by a sol-gel method using supercritical drying in ethyl alcohol. The structural, optical and electrical properties of the films were investigated. The ZnO films were polycrystalline textured, preferentially oriented with the (0 0 2) crystallographic direction normal to the film plane. The films show within the visible wavelength region an optical transmittance of more than 90% and a low electrical resistivity of 3.5 x 10<sup>-4</sup>
 Ω cm at room temperature.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A15C</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B60H55J</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B70C61</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B70H20C</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Préparation</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Preparation</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Preparación</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Semiconducteur type n</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>n type semiconductor</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Matériau dopé</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Doped materials</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Thin films</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Pulvérisation irradiation</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Sputtering</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Croissance film</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Film growth</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Pulvérisation cathodique</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Cathode sputtering</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Magnétron</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Magnetrons</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Nanocristal</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Nanocrystal</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Nanocristal</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Nanoparticule</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Nanoparticles</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Procédé sol gel</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Sol-gel process</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Facteur transmission</s0>
<s5>13</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Transmittance</s0>
<s5>13</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Factor transmisión</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Conductivité électrique</s0>
<s5>14</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Electrical conductivity</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Oxyde de zinc</s0>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Zinc oxide</s0>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Zinc óxido</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Aérogel</s0>
<s5>16</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Aerogels</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Nanostructure</s0>
<s5>22</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Nanostructures</s0>
<s5>22</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Microscopie électronique transmission</s0>
<s5>23</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Transmission electron microscopy</s0>
<s5>23</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Codopage</s0>
<s5>24</s5>
</fC03>
<fC03 i1="18" i2="X" l="ENG"><s0>Codoping</s0>
<s5>24</s5>
</fC03>
<fC03 i1="18" i2="X" l="SPA"><s0>Codrogado</s0>
<s5>24</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Addition aluminium</s0>
<s5>25</s5>
</fC03>
<fC03 i1="19" i2="3" l="ENG"><s0>Aluminium additions</s0>
<s5>25</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>Addition cobalt</s0>
<s5>26</s5>
</fC03>
<fC03 i1="20" i2="3" l="ENG"><s0>Cobalt additions</s0>
<s5>26</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>Microscopie électronique balayage</s0>
<s5>27</s5>
</fC03>
<fC03 i1="21" i2="3" l="ENG"><s0>Scanning electron microscopy</s0>
<s5>27</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>O Zn</s0>
<s4>INC</s4>
<s5>32</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>ZnO:Al Co</s0>
<s4>INC</s4>
<s5>33</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>8115C</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>45</s5>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>6855J</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="26" i2="3" l="FRE"><s0>7361</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="27" i2="3" l="FRE"><s0>7820C</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC07 i1="01" i2="3" l="FRE"><s0>Composé de métal de transition</s0>
<s5>62</s5>
</fC07>
<fC07 i1="01" i2="3" l="ENG"><s0>Transition element compounds</s0>
<s5>62</s5>
</fC07>
<fC07 i1="02" i2="3" l="FRE"><s0>Composé minéral</s0>
<s5>63</s5>
</fC07>
<fC07 i1="02" i2="3" l="ENG"><s0>Inorganic compounds</s0>
<s5>63</s5>
</fC07>
<fN21><s1>035</s1>
</fN21>
</pA>
</standard>
<server><NO>PASCAL 08-0064615 INIST</NO>
<ET>Preparation and characterization of n-type conductive (Al, Co) co-doped ZnO thin films deposited by sputtering from aerogel nanopowders</ET>
<AU>EL MIR (L.); BEN AYADI (Z.); SAADOUN (M.); DJESSAS (K.); VON BARDELEBEN (H. J.); ALAYA (S.)</AU>
<AF>Laboratoire de physique des matériaux et des nanomatériaux appliquée à l'environnement, faculté des sciences de Gabès, Cité Erriadh Manara Zrig/6072 Gabès/Tunisie (1 aut., 2 aut., 3 aut., 6 aut.); Laboratoire de mathématiques et physique des systèmes (MEPS), université de Perpignan, 52, avenue Paul Alduy/66860 Perpignan/France (4 aut.); Institut des nanosciences de Paris (INSP) UMR CNRS 7588, universités Pierre-et-Marie-Curie (Paris 6) et Denis-Diderot (Paris 7), campus Boucicaut, 140, rue de Lourmel/75015 Paris/France (5 aut.)</AF>
<DT>Publication en série; Niveau analytique</DT>
<SO>Applied surface science; ISSN 0169-4332; Pays-Bas; Da. 2007; Vol. 254; No. 2; Pp. 570-573; Bibl. 28 ref.</SO>
<LA>Anglais</LA>
<EA>Highly transparent, n-type conducting ZnO thin films were obtained by low temperature magnetron sputtering of (Co, Al) co-doped ZnO nanocrystalline aerogels. The nanoparticles of ∼30 nm size were synthesized by a sol-gel method using supercritical drying in ethyl alcohol. The structural, optical and electrical properties of the films were investigated. The ZnO films were polycrystalline textured, preferentially oriented with the (0 0 2) crystallographic direction normal to the film plane. The films show within the visible wavelength region an optical transmittance of more than 90% and a low electrical resistivity of 3.5 x 10<sup>-4</sup>
 Ω cm at room temperature.</EA>
<CC>001B80A15C; 001B60H55J; 001B70C61; 001B70H20C</CC>
<FD>Préparation; Semiconducteur type n; Matériau dopé; Couche mince; Pulvérisation irradiation; Croissance film; Pulvérisation cathodique; Magnétron; Nanocristal; Nanoparticule; Procédé sol gel; Facteur transmission; Conductivité électrique; Oxyde de zinc; Aérogel; Nanostructure; Microscopie électronique transmission; Codopage; Addition aluminium; Addition cobalt; Microscopie électronique balayage; O Zn; ZnO:Al Co; 8115C; 6855J; 7361; 7820C</FD>
<FG>Composé de métal de transition; Composé minéral</FG>
<ED>Preparation; n type semiconductor; Doped materials; Thin films; Sputtering; Film growth; Cathode sputtering; Magnetrons; Nanocrystal; Nanoparticles; Sol-gel process; Transmittance; Electrical conductivity; Zinc oxide; Aerogels; Nanostructures; Transmission electron microscopy; Codoping; Aluminium additions; Cobalt additions; Scanning electron microscopy</ED>
<EG>Transition element compounds; Inorganic compounds</EG>
<SD>Preparación; Nanocristal; Factor transmisión; Zinc óxido; Codrogado</SD>
<LO>INIST-16002.354000174202590250</LO>
<ID>08-0064615</ID>
</server>
</inist>
</record>

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Preparation and characterization of n-type conductive (Al, Co) co-doped ZnO thin films deposited by sputtering from aerogel nanopowders

Preparation and characterization of n-type conductive (Al, Co) co-doped ZnO thin films deposited by sputtering from aerogel nanopowders

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