Optical study of annealed cobalt-porous silicon nanocomposites
Identifieur interne : 000024 ( PascalFrancis/Corpus ); précédent : 000023; suivant : 000025Optical study of annealed cobalt-porous silicon nanocomposites
Auteurs : M.-B. Bouzouraa ; M. Rahmani ; M.-A. Zaïbi ; N. Lorrain ; L. Hajji ; M. OueslatiSource :
- Journal of luminescence [ 0022-2313 ] ; 2013.
Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
- Aqueous solutions, Cobalt Chlorides, Cobalt oxide, Dispersive spectrometry, Excitation energy transfer, Fourier-transformed infrared spectrometry, Nanocomposites, Nanostructured materials, Optical properties, Photoluminescence, Porous materials, Radiative transfer, Raman spectra, Silicon, X-ray spectra.
Abstract
We report Raman and photoluminescence studies of cobalt-porous silicon nanocomposites (PS/Co). Cobalt was introduced in porous silicon (PS) by immersion method using CoCl2 aqueous solution. The presence of cobalt in PS matrix was identified by FTIR spectroscopy and EDX analyses. The Raman spectroscopy revealed the presence of Si bonded to cobalt oxide in PS/Co. We discuss also the Raman spectra of PS and PS/Co samples under different annealing temperatures ranging from room temperature (RT) to 600 °C. The optical properties of PS and PS/Co were studied by photoluminescence (PL). The highest PL intensity was observed for an immersion time of 60 min. For long duration, the deposited cobalt quantity acts as energy trap and promotes the non-radiative energy transfer; it is the autoextinction phenomenon. We have studied also the effect of the annealing temperature on the PL of both PS and PS/Co samples. For PS, the annealing process leads to a rapid oxidation of the Si nanocrystallites (nc-Si). In the case of PS/Co sample, two different mechanisms are proposed; one is the desorption of Si-Hx(x=2.3) with the formation of cobalt oxide for annealing temperature less than 450 C which causes the increasing of PL intensity and the stability of PL energy, the other mechanism is the transformation of the porous silicon to silica at high temperatures (>450 C) which leads to the decreasing of the PL intensity and the blue shift of the PL curve.
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Format Inist (serveur)
NO : | PASCAL 13-0285949 INIST |
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ET : | Optical study of annealed cobalt-porous silicon nanocomposites |
AU : | BOUZOURAA (M.-B.); RAHMANI (M.); ZAÏBI (M.-A.); LORRAIN (N.); HAJJI (L.); OUESLATI (M.) |
AF : | Unité de Nanomatériaux et Photonique, Faculté des Sciences de Tunis, Département de Physique, 2092 El Manar/Tunis/Tunisie (1 aut., 2 aut., 3 aut., 6 aut.); Ecole Supérieure des Sciences et Techniques de Tunis, 5 Avenue Taha Hussein/1008 Tunis/Tunisie (3 aut.); Université Européenne de Bretagne, CNRS FOTON-UMR 6082, 6 rue de Kérampont, BP 80518/22305 Lannion/France (4 aut., 5 aut.) |
DT : | Publication en série; Niveau analytique |
SO : | Journal of luminescence; ISSN 0022-2313; Coden JLUMA8; Pays-Bas; Da. 2013; Vol. 143; Pp. 521-525; Bibl. 27 ref. |
LA : | Anglais |
EA : | We report Raman and photoluminescence studies of cobalt-porous silicon nanocomposites (PS/Co). Cobalt was introduced in porous silicon (PS) by immersion method using CoCl2 aqueous solution. The presence of cobalt in PS matrix was identified by FTIR spectroscopy and EDX analyses. The Raman spectroscopy revealed the presence of Si bonded to cobalt oxide in PS/Co. We discuss also the Raman spectra of PS and PS/Co samples under different annealing temperatures ranging from room temperature (RT) to 600 °C. The optical properties of PS and PS/Co were studied by photoluminescence (PL). The highest PL intensity was observed for an immersion time of 60 min. For long duration, the deposited cobalt quantity acts as energy trap and promotes the non-radiative energy transfer; it is the autoextinction phenomenon. We have studied also the effect of the annealing temperature on the PL of both PS and PS/Co samples. For PS, the annealing process leads to a rapid oxidation of the Si nanocrystallites (nc-Si). In the case of PS/Co sample, two different mechanisms are proposed; one is the desorption of Si-Hx(x=2.3) with the formation of cobalt oxide for annealing temperature less than 450 C which causes the increasing of PL intensity and the stability of PL energy, the other mechanism is the transformation of the porous silicon to silica at high temperatures (>450 C) which leads to the decreasing of the PL intensity and the blue shift of the PL curve. |
CC : | 001B70H67; 001B80A07B |
FD : | Transfert énergie excitation; Propriété optique; Photoluminescence; Solution aqueuse; Spectrométrie FTIR; Matériau poreux; Nanomatériau; Nanocomposite; Cobalt Chlorure; Spectre RX; Spectrométrie dispersive; Spectre Raman; Silicium; Oxyde de cobalt; Transfert radiatif; Si; 8107; 7867 |
ED : | Excitation energy transfer; Optical properties; Photoluminescence; Aqueous solutions; Fourier-transformed infrared spectrometry; Porous materials; Nanostructured materials; Nanocomposites; Cobalt Chlorides; X-ray spectra; Dispersive spectrometry; Raman spectra; Silicon; Cobalt oxide; Radiative transfer |
SD : | Transferencia energía excitación; Espectrometría FTIR; Espectrometría dispersiva; Cobalto óxido |
LO : | INIST-14666.354000506590370840 |
ID : | 13-0285949 |
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Pascal:13-0285949Le document en format XML
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<front><div type="abstract" xml:lang="en">We report Raman and photoluminescence studies of cobalt-porous silicon nanocomposites (PS/Co). Cobalt was introduced in porous silicon (PS) by immersion method using CoCl<sub>2</sub>
aqueous solution. The presence of cobalt in PS matrix was identified by FTIR spectroscopy and EDX analyses. The Raman spectroscopy revealed the presence of Si bonded to cobalt oxide in PS/Co. We discuss also the Raman spectra of PS and PS/Co samples under different annealing temperatures ranging from room temperature (RT) to 600 °C. The optical properties of PS and PS/Co were studied by photoluminescence (PL). The highest PL intensity was observed for an immersion time of 60 min. For long duration, the deposited cobalt quantity acts as energy trap and promotes the non-radiative energy transfer; it is the autoextinction phenomenon. We have studied also the effect of the annealing temperature on the PL of both PS and PS/Co samples. For PS, the annealing process leads to a rapid oxidation of the Si nanocrystallites (nc-Si). In the case of PS/Co sample, two different mechanisms are proposed; one is the desorption of Si-H<sub>x(x=2.3)</sub>
with the formation of cobalt oxide for annealing temperature less than 450 C which causes the increasing of PL intensity and the stability of PL energy, the other mechanism is the transformation of the porous silicon to silica at high temperatures (>450 C) which leads to the decreasing of the PL intensity and the blue shift of the PL curve.</div>
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<fC01 i1="01" l="ENG"><s0>We report Raman and photoluminescence studies of cobalt-porous silicon nanocomposites (PS/Co). Cobalt was introduced in porous silicon (PS) by immersion method using CoCl<sub>2</sub>
aqueous solution. The presence of cobalt in PS matrix was identified by FTIR spectroscopy and EDX analyses. The Raman spectroscopy revealed the presence of Si bonded to cobalt oxide in PS/Co. We discuss also the Raman spectra of PS and PS/Co samples under different annealing temperatures ranging from room temperature (RT) to 600 °C. The optical properties of PS and PS/Co were studied by photoluminescence (PL). The highest PL intensity was observed for an immersion time of 60 min. For long duration, the deposited cobalt quantity acts as energy trap and promotes the non-radiative energy transfer; it is the autoextinction phenomenon. We have studied also the effect of the annealing temperature on the PL of both PS and PS/Co samples. For PS, the annealing process leads to a rapid oxidation of the Si nanocrystallites (nc-Si). In the case of PS/Co sample, two different mechanisms are proposed; one is the desorption of Si-H<sub>x(x=2.3)</sub>
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<s5>66</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Silicium</s0>
<s2>NC</s2>
<s5>67</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Silicon</s0>
<s2>NC</s2>
<s5>67</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Oxyde de cobalt</s0>
<s5>68</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Cobalt oxide</s0>
<s5>68</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Cobalto óxido</s0>
<s5>68</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Transfert radiatif</s0>
<s5>69</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Radiative transfer</s0>
<s5>69</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Si</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>8107</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>7867</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fN21><s1>273</s1>
</fN21>
</pA>
</standard>
<server><NO>PASCAL 13-0285949 INIST</NO>
<ET>Optical study of annealed cobalt-porous silicon nanocomposites</ET>
<AU>BOUZOURAA (M.-B.); RAHMANI (M.); ZAÏBI (M.-A.); LORRAIN (N.); HAJJI (L.); OUESLATI (M.)</AU>
<AF>Unité de Nanomatériaux et Photonique, Faculté des Sciences de Tunis, Département de Physique, 2092 El Manar/Tunis/Tunisie (1 aut., 2 aut., 3 aut., 6 aut.); Ecole Supérieure des Sciences et Techniques de Tunis, 5 Avenue Taha Hussein/1008 Tunis/Tunisie (3 aut.); Université Européenne de Bretagne, CNRS FOTON-UMR 6082, 6 rue de Kérampont, BP 80518/22305 Lannion/France (4 aut., 5 aut.)</AF>
<DT>Publication en série; Niveau analytique</DT>
<SO>Journal of luminescence; ISSN 0022-2313; Coden JLUMA8; Pays-Bas; Da. 2013; Vol. 143; Pp. 521-525; Bibl. 27 ref.</SO>
<LA>Anglais</LA>
<EA>We report Raman and photoluminescence studies of cobalt-porous silicon nanocomposites (PS/Co). Cobalt was introduced in porous silicon (PS) by immersion method using CoCl<sub>2</sub>
aqueous solution. The presence of cobalt in PS matrix was identified by FTIR spectroscopy and EDX analyses. The Raman spectroscopy revealed the presence of Si bonded to cobalt oxide in PS/Co. We discuss also the Raman spectra of PS and PS/Co samples under different annealing temperatures ranging from room temperature (RT) to 600 °C. The optical properties of PS and PS/Co were studied by photoluminescence (PL). The highest PL intensity was observed for an immersion time of 60 min. For long duration, the deposited cobalt quantity acts as energy trap and promotes the non-radiative energy transfer; it is the autoextinction phenomenon. We have studied also the effect of the annealing temperature on the PL of both PS and PS/Co samples. For PS, the annealing process leads to a rapid oxidation of the Si nanocrystallites (nc-Si). In the case of PS/Co sample, two different mechanisms are proposed; one is the desorption of Si-H<sub>x(x=2.3)</sub>
with the formation of cobalt oxide for annealing temperature less than 450 C which causes the increasing of PL intensity and the stability of PL energy, the other mechanism is the transformation of the porous silicon to silica at high temperatures (>450 C) which leads to the decreasing of the PL intensity and the blue shift of the PL curve.</EA>
<CC>001B70H67; 001B80A07B</CC>
<FD>Transfert énergie excitation; Propriété optique; Photoluminescence; Solution aqueuse; Spectrométrie FTIR; Matériau poreux; Nanomatériau; Nanocomposite; Cobalt Chlorure; Spectre RX; Spectrométrie dispersive; Spectre Raman; Silicium; Oxyde de cobalt; Transfert radiatif; Si; 8107; 7867</FD>
<ED>Excitation energy transfer; Optical properties; Photoluminescence; Aqueous solutions; Fourier-transformed infrared spectrometry; Porous materials; Nanostructured materials; Nanocomposites; Cobalt Chlorides; X-ray spectra; Dispersive spectrometry; Raman spectra; Silicon; Cobalt oxide; Radiative transfer</ED>
<SD>Transferencia energía excitación; Espectrometría FTIR; Espectrometría dispersiva; Cobalto óxido</SD>
<LO>INIST-14666.354000506590370840</LO>
<ID>13-0285949</ID>
</server>
</inist>
</record>
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