Calixarene membranes on semiconductor substrates for E.I.S. chemical sensors
Identifieur interne : 001001 ( Istex/Corpus ); précédent : 001000; suivant : 001002Calixarene membranes on semiconductor substrates for E.I.S. chemical sensors
Auteurs : R. Mlika ; H. Ben Ouada ; R. Ben Chaabane ; M. Gamoudi ; G. Guillaud ; N. Jaffrezic-Renault ; R. LamartineSource :
- Electrochimica Acta [ 0013-4686 ] ; 1996.
Abstract
Thin p-tert-butyl calix[4]arene and p-tert-butyl calix[6]arene films were deposited using the technique of thermal evaporation under vacuum to fabricate chemical microsensors based on an E.I.S. (Electrolyte-Insulator-Semiconductor) structure. Electrochemical capacity measurements were made to test and calibrate physico-chemical sensors with regards to their sensitivity and selectivity. The sensing properties of calix[4]arene and calix[6]arene towards alkaline and heavy metal ions were tested. Both devices have shown Nernstian response and a wide working pH range. The former responded well to sodium ions and the latter to nickel ions, thus partial selectivity for these ions is shown. The improved lifetime (compared with membranes prepared by physical adsorption techniques) and sensitivity observed for these films indicates that these structures are worthy of further developments.
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DOI: 10.1016/S0013-4686(97)00259-4
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Ben Chaabane</name><affiliation><mods:affiliation>Laboratoire de Physique des Interfaces, Facultédes Sciences de Monastir, 5000 Monastir, Tunisia</mods:affiliation></affiliation></author><author><name sortKey="Gamoudi, M" sort="Gamoudi, M" uniqKey="Gamoudi M" first="M." last="Gamoudi">M. Gamoudi</name><affiliation><mods:affiliation>Laboratoired’Electronique des Solide UCB Lyon I, 43, Bd du 11 Novembre 1918, F-69622 Villeurbanne, France</mods:affiliation></affiliation><affiliation><mods:affiliation>To whom correspondence should be addressed</mods:affiliation></affiliation></author><author><name sortKey="Guillaud, G" sort="Guillaud, G" uniqKey="Guillaud G" first="G." last="Guillaud">G. Guillaud</name><affiliation><mods:affiliation>Laboratoired’Electronique des Solide UCB Lyon I, 43, Bd du 11 Novembre 1918, F-69622 Villeurbanne, France</mods:affiliation></affiliation></author><author><name sortKey="Jaffrezic Renault, N" sort="Jaffrezic Renault, N" uniqKey="Jaffrezic Renault N" first="N." last="Jaffrezic-Renault">N. Jaffrezic-Renault</name><affiliation><mods:affiliation>Laboratoire de Physico-chimie des Interfaces, URA CNRS 404 ECL-Lyon, B.P. 163, F-69131 Ecully Cedex, France</mods:affiliation></affiliation></author><author><name sortKey="Lamartine, R" sort="Lamartine, R" uniqKey="Lamartine R" first="R." last="Lamartine">R. Lamartine</name><affiliation><mods:affiliation>Laboratoire de Chimie Industrielle, UCB Lyon I, 43, Bd du 11 Novembre 1918, F-69622 Villeurbanne, France</mods:affiliation></affiliation></author></titleStmt><publicationStmt><idno type="wicri:source">ISTEX</idno><idno type="RBID">ISTEX:441E39F982E90D0F71E0D80F9B28CA207AA241DE</idno><date when="1996" year="1996">1996</date><idno type="doi">10.1016/S0013-4686(97)00259-4</idno><idno type="url">https://api.istex.fr/document/441E39F982E90D0F71E0D80F9B28CA207AA241DE/fulltext/pdf</idno><idno type="wicri:Area/Istex/Corpus">001001</idno><idno type="wicri:explorRef" wicri:stream="Istex" wicri:step="Corpus" wicri:corpus="ISTEX">001001</idno></publicationStmt><sourceDesc><biblStruct><analytic><title level="a">Calixarene membranes on semiconductor substrates for E.I.S. chemical sensors</title><author><name sortKey="Mlika, R" sort="Mlika, R" uniqKey="Mlika R" first="R." last="Mlika">R. Mlika</name><affiliation><mods:affiliation>Laboratoire de Physique des Interfaces, Facultédes Sciences de Monastir, 5000 Monastir, Tunisia</mods:affiliation></affiliation></author><author><name sortKey="Ouada, H Ben" sort="Ouada, H Ben" uniqKey="Ouada H" first="H. Ben" last="Ouada">H. Ben Ouada</name><affiliation><mods:affiliation>Laboratoire de Physique des Interfaces, Facultédes Sciences de Monastir, 5000 Monastir, Tunisia</mods:affiliation></affiliation></author><author><name sortKey="Chaabane, R Ben" sort="Chaabane, R Ben" uniqKey="Chaabane R" first="R. Ben" last="Chaabane">R. Ben Chaabane</name><affiliation><mods:affiliation>Laboratoire de Physique des Interfaces, Facultédes Sciences de Monastir, 5000 Monastir, Tunisia</mods:affiliation></affiliation></author><author><name sortKey="Gamoudi, M" sort="Gamoudi, M" uniqKey="Gamoudi M" first="M." last="Gamoudi">M. Gamoudi</name><affiliation><mods:affiliation>Laboratoired’Electronique des Solide UCB Lyon I, 43, Bd du 11 Novembre 1918, F-69622 Villeurbanne, France</mods:affiliation></affiliation><affiliation><mods:affiliation>To whom correspondence should be addressed</mods:affiliation></affiliation></author><author><name sortKey="Guillaud, G" sort="Guillaud, G" uniqKey="Guillaud G" first="G." last="Guillaud">G. Guillaud</name><affiliation><mods:affiliation>Laboratoired’Electronique des Solide UCB Lyon I, 43, Bd du 11 Novembre 1918, F-69622 Villeurbanne, France</mods:affiliation></affiliation></author><author><name sortKey="Jaffrezic Renault, N" sort="Jaffrezic Renault, N" uniqKey="Jaffrezic Renault N" first="N." last="Jaffrezic-Renault">N. Jaffrezic-Renault</name><affiliation><mods:affiliation>Laboratoire de Physico-chimie des Interfaces, URA CNRS 404 ECL-Lyon, B.P. 163, F-69131 Ecully Cedex, France</mods:affiliation></affiliation></author><author><name sortKey="Lamartine, R" sort="Lamartine, R" uniqKey="Lamartine R" first="R." last="Lamartine">R. Lamartine</name><affiliation><mods:affiliation>Laboratoire de Chimie Industrielle, UCB Lyon I, 43, Bd du 11 Novembre 1918, F-69622 Villeurbanne, France</mods:affiliation></affiliation></author></analytic><monogr></monogr><series><title level="j">Electrochimica Acta</title><title level="j" type="abbrev">EA</title><idno type="ISSN">0013-4686</idno><imprint><publisher>ELSEVIER</publisher><date type="published" when="1996">1996</date><biblScope unit="volume">43</biblScope><biblScope unit="issue">8</biblScope><biblScope unit="page" from="841">841</biblScope><biblScope unit="page" to="847">847</biblScope></imprint><idno type="ISSN">0013-4686</idno></series><idno type="istex">441E39F982E90D0F71E0D80F9B28CA207AA241DE</idno><idno type="DOI">10.1016/S0013-4686(97)00259-4</idno><idno type="PII">S0013-4686(97)00259-4</idno></biblStruct></sourceDesc><seriesStmt><idno type="ISSN">0013-4686</idno></seriesStmt></fileDesc><profileDesc><textClass></textClass><langUsage><language ident="en">en</language></langUsage></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Thin p-tert-butyl calix[4]arene and p-tert-butyl calix[6]arene films were deposited using the technique of thermal evaporation under vacuum to fabricate chemical microsensors based on an E.I.S. (Electrolyte-Insulator-Semiconductor) structure. Electrochemical capacity measurements were made to test and calibrate physico-chemical sensors with regards to their sensitivity and selectivity. The sensing properties of calix[4]arene and calix[6]arene towards alkaline and heavy metal ions were tested. Both devices have shown Nernstian response and a wide working pH range. The former responded well to sodium ions and the latter to nickel ions, thus partial selectivity for these ions is shown. The improved lifetime (compared with membranes prepared by physical adsorption techniques) and sensitivity observed for these films indicates that these structures are worthy of further developments.</div></front></TEI><istex><corpusName>elsevier</corpusName><author><json:item><name>R. Mlika</name><affiliations><json:string>Laboratoire de Physique des Interfaces, Facultédes Sciences de Monastir, 5000 Monastir, Tunisia</json:string></affiliations></json:item><json:item><name>H.Ben Ouada</name><affiliations><json:string>Laboratoire de Physique des Interfaces, Facultédes Sciences de Monastir, 5000 Monastir, Tunisia</json:string></affiliations></json:item><json:item><name>R.Ben Chaabane</name><affiliations><json:string>Laboratoire de Physique des Interfaces, Facultédes Sciences de Monastir, 5000 Monastir, Tunisia</json:string></affiliations></json:item><json:item><name>M. Gamoudi</name><affiliations><json:string>Laboratoired’Electronique des Solide UCB Lyon I, 43, Bd du 11 Novembre 1918, F-69622 Villeurbanne, France</json:string><json:string>To whom correspondence should be addressed</json:string></affiliations></json:item><json:item><name>G. Guillaud</name><affiliations><json:string>Laboratoired’Electronique des Solide UCB Lyon I, 43, Bd du 11 Novembre 1918, F-69622 Villeurbanne, France</json:string></affiliations></json:item><json:item><name>N. Jaffrezic-Renault</name><affiliations><json:string>Laboratoire de Physico-chimie des Interfaces, URA CNRS 404 ECL-Lyon, B.P. 163, F-69131 Ecully Cedex, France</json:string></affiliations></json:item><json:item><name>R. Lamartine</name><affiliations><json:string>Laboratoire de Chimie Industrielle, UCB Lyon I, 43, Bd du 11 Novembre 1918, F-69622 Villeurbanne, France</json:string></affiliations></json:item></author><subject><json:item><lang><json:string>eng</json:string></lang><value>calixarene</value></json:item><json:item><lang><json:string>eng</json:string></lang><value>sensor</value></json:item><json:item><lang><json:string>eng</json:string></lang><value>evaporation</value></json:item><json:item><lang><json:string>eng</json:string></lang><value>electrochemical capacity</value></json:item><json:item><lang><json:string>eng</json:string></lang><value>isemiconductor</value></json:item></subject><language><json:string>eng</json:string></language><originalGenre><json:string>Full-length article</json:string></originalGenre><abstract>Thin p-tert-butyl calix[4]arene and p-tert-butyl calix[6]arene films were deposited using the technique of thermal evaporation under vacuum to fabricate chemical microsensors based on an E.I.S. (Electrolyte-Insulator-Semiconductor) structure. Electrochemical capacity measurements were made to test and calibrate physico-chemical sensors with regards to their sensitivity and selectivity. The sensing properties of calix[4]arene and calix[6]arene towards alkaline and heavy metal ions were tested. Both devices have shown Nernstian response and a wide working pH range. The former responded well to sodium ions and the latter to nickel ions, thus partial selectivity for these ions is shown. The improved lifetime (compared with membranes prepared by physical adsorption techniques) and sensitivity observed for these films indicates that these structures are worthy of further developments.</abstract><qualityIndicators><score>4.02</score><pdfVersion>1.2</pdfVersion><pdfPageSize>595 x 842 pts (A4)</pdfPageSize><refBibsNative>true</refBibsNative><keywordCount>5</keywordCount><abstractCharCount>891</abstractCharCount><pdfWordCount>2592</pdfWordCount><pdfCharCount>15758</pdfCharCount><pdfPageCount>7</pdfPageCount><abstractWordCount>119</abstractWordCount></qualityIndicators><title>Calixarene membranes on semiconductor substrates for E.I.S. chemical sensors</title><pii><json:string>S0013-4686(97)00259-4</json:string></pii><genre><json:string>research-article</json:string></genre><host><volume>43</volume><pii><json:string>S0013-4686(00)X0056-4</json:string></pii><pages><last>847</last><first>841</first></pages><issn><json:string>0013-4686</json:string></issn><issue>8</issue><genre><json:string>journal</json:string></genre><language><json:string>unknown</json:string></language><title>Electrochimica Acta</title><publicationDate>1997</publicationDate></host><categories><wos><json:string>ELECTROCHEMISTRY</json:string></wos></categories><publicationDate>1996</publicationDate><copyrightDate>1996</copyrightDate><doi><json:string>10.1016/S0013-4686(97)00259-4</json:string></doi><id>441E39F982E90D0F71E0D80F9B28CA207AA241DE</id><score>0.05007001</score><fulltext><json:item><original>true</original><mimetype>application/pdf</mimetype><extension>pdf</extension><uri>https://api.istex.fr/document/441E39F982E90D0F71E0D80F9B28CA207AA241DE/fulltext/pdf</uri></json:item><json:item><original>false</original><mimetype>application/zip</mimetype><extension>zip</extension><uri>https://api.istex.fr/document/441E39F982E90D0F71E0D80F9B28CA207AA241DE/fulltext/zip</uri></json:item><istex:fulltextTEI uri="https://api.istex.fr/document/441E39F982E90D0F71E0D80F9B28CA207AA241DE/fulltext/tei"><teiHeader><fileDesc><titleStmt><title level="a">Calixarene membranes on semiconductor substrates for E.I.S. chemical sensors</title></titleStmt><publicationStmt><authority>ISTEX</authority><publisher>ELSEVIER</publisher><availability><p>©1996 Elsevier Science Ltd</p></availability><date>1996</date></publicationStmt><notesStmt><note type="content">Fig. 1: (a) Calix[n]arene structure; (b) molecular conformation of the calix[4]arene.</note><note type="content">Fig. 2: Schematic structure of the E.I.S.-type sensor used in this work.</note><note type="content">Fig. 3: Variation of capacitance as a function of potential for Si/Si2/calix[4]arene structure for several sodium ion concentrations. Calixarene membrane thickness is about 100nm.</note><note type="content">Fig. 4: Variation of capacitance C(V) vs potential for Si/SiO2/calix[4]arene structure for several sodium concentrations. Calixarene membrane thickness is about 10nm.</note><note type="content">Fig. 5: Variation in the flat band potential ΔVfb as a function of the pNa ion concentration of the calix[4]arene evaporated Si/SiO2 structure.</note><note type="content">Fig. 6: The effect of Na+ concentration on the C(V) characteristics calix[6]arene E.I.S. type sensor (10nm).</note><note type="content">Fig. 7: Variation in the flat band potential as a function of the pX ion concentration for the calix[4]arene E.I.S. structure.</note><note type="content">Fig. 8: Variation in flat band potential as a function of the pX ion concentration for the calix[6]arene E.I.S. structure.</note><note type="content">Fig. 9: Variation in flat band potential as a function of the pNi ion concentration for the calix[6]arene E.I.S. type sensor.</note><note type="content">Fig. 10: Effect of pH on the response of E.I.S. based on calix[6]arene and calix[4]arene at 1×10−3M NiCl2 and 1×10−3M NaNO3.</note><note type="content">Table 1: Characteristics of Ni2+ and Na+ E.I.S. sensor based on p-tert-butyl calix[6]arene and p-tert-butyl calix[4]arene evaporated</note></notesStmt><sourceDesc><biblStruct type="inbook"><analytic><title level="a">Calixarene membranes on semiconductor substrates for E.I.S. chemical sensors</title><author xml:id="author-1"><persName><forename type="first">R.</forename><surname>Mlika</surname></persName><affiliation>Laboratoire de Physique des Interfaces, Facultédes Sciences de Monastir, 5000 Monastir, Tunisia</affiliation></author><author xml:id="author-2"><persName><forename type="first">H.Ben</forename><surname>Ouada</surname></persName><affiliation>Laboratoire de Physique des Interfaces, Facultédes Sciences de Monastir, 5000 Monastir, Tunisia</affiliation></author><author xml:id="author-3"><persName><forename type="first">R.Ben</forename><surname>Chaabane</surname></persName><affiliation>Laboratoire de Physique des Interfaces, Facultédes Sciences de Monastir, 5000 Monastir, Tunisia</affiliation></author><author xml:id="author-4"><persName><forename type="first">M.</forename><surname>Gamoudi</surname></persName><affiliation>Laboratoired’Electronique des Solide UCB Lyon I, 43, Bd du 11 Novembre 1918, F-69622 Villeurbanne, France</affiliation><affiliation>To whom correspondence should be addressed</affiliation></author><author xml:id="author-5"><persName><forename type="first">G.</forename><surname>Guillaud</surname></persName><affiliation>Laboratoired’Electronique des Solide UCB Lyon I, 43, Bd du 11 Novembre 1918, F-69622 Villeurbanne, France</affiliation></author><author xml:id="author-6"><persName><forename type="first">N.</forename><surname>Jaffrezic-Renault</surname></persName><affiliation>Laboratoire de Physico-chimie des Interfaces, URA CNRS 404 ECL-Lyon, B.P. 163, F-69131 Ecully Cedex, France</affiliation></author><author xml:id="author-7"><persName><forename type="first">R.</forename><surname>Lamartine</surname></persName><affiliation>Laboratoire de Chimie Industrielle, UCB Lyon I, 43, Bd du 11 Novembre 1918, F-69622 Villeurbanne, France</affiliation></author></analytic><monogr><title level="j">Electrochimica Acta</title><title level="j" type="abbrev">EA</title><idno type="pISSN">0013-4686</idno><idno type="PII">S0013-4686(00)X0056-4</idno><imprint><publisher>ELSEVIER</publisher><date type="published" when="1996"></date><biblScope unit="volume">43</biblScope><biblScope unit="issue">8</biblScope><biblScope unit="page" from="841">841</biblScope><biblScope unit="page" to="847">847</biblScope></imprint></monogr><idno type="istex">441E39F982E90D0F71E0D80F9B28CA207AA241DE</idno><idno type="DOI">10.1016/S0013-4686(97)00259-4</idno><idno type="PII">S0013-4686(97)00259-4</idno></biblStruct></sourceDesc></fileDesc><profileDesc><creation><date>1996</date></creation><langUsage><language ident="en">en</language></langUsage><abstract xml:lang="en"><p>Thin p-tert-butyl calix[4]arene and p-tert-butyl calix[6]arene films were deposited using the technique of thermal evaporation under vacuum to fabricate chemical microsensors based on an E.I.S. (Electrolyte-Insulator-Semiconductor) structure. Electrochemical capacity measurements were made to test and calibrate physico-chemical sensors with regards to their sensitivity and selectivity. The sensing properties of calix[4]arene and calix[6]arene towards alkaline and heavy metal ions were tested. Both devices have shown Nernstian response and a wide working pH range. The former responded well to sodium ions and the latter to nickel ions, thus partial selectivity for these ions is shown. The improved lifetime (compared with membranes prepared by physical adsorption techniques) and sensitivity observed for these films indicates that these structures are worthy of further developments.</p></abstract><textClass><keywords scheme="keyword"><list><head>Keywords</head><item><term>calixarene</term></item><item><term>sensor</term></item><item><term>evaporation</term></item><item><term>electrochemical capacity</term></item><item><term>isemiconductor</term></item></list></keywords></textClass></profileDesc><revisionDesc><change when="1997-05-16">Modified</change><change when="1996">Published</change></revisionDesc></teiHeader></istex:fulltextTEI><json:item><original>false</original><mimetype>text/plain</mimetype><extension>txt</extension><uri>https://api.istex.fr/document/441E39F982E90D0F71E0D80F9B28CA207AA241DE/fulltext/txt</uri></json:item></fulltext><metadata><istex:metadataXml wicri:clean="Elsevier, elements deleted: ce:floats; body; tail"><istex:xmlDeclaration>version="1.0" encoding="utf-8"</istex:xmlDeclaration><istex:docType PUBLIC="-//ES//DTD journal article DTD version 4.5.2//EN//XML" URI="art452.dtd" name="istex:docType"><istex:entity SYSTEM="gr1" NDATA="IMAGE" name="gr1"></istex:entity><istex:entity SYSTEM="gr2" NDATA="IMAGE" name="gr2"></istex:entity><istex:entity SYSTEM="gr3" NDATA="IMAGE" name="gr3"></istex:entity><istex:entity SYSTEM="gr4" NDATA="IMAGE" name="gr4"></istex:entity><istex:entity SYSTEM="gr5" NDATA="IMAGE" name="gr5"></istex:entity><istex:entity SYSTEM="gr6" NDATA="IMAGE" name="gr6"></istex:entity><istex:entity SYSTEM="gr7" NDATA="IMAGE" name="gr7"></istex:entity><istex:entity SYSTEM="gr8" NDATA="IMAGE" name="gr8"></istex:entity><istex:entity SYSTEM="gr9" NDATA="IMAGE" name="gr9"></istex:entity><istex:entity SYSTEM="gr10" NDATA="IMAGE" name="gr10"></istex:entity></istex:docType><istex:document><converted-article version="4.5.2" docsubtype="fla"><item-info><jid>EA</jid><aid>1794</aid><ce:pii>S0013-4686(97)00259-4</ce:pii><ce:doi>10.1016/S0013-4686(97)00259-4</ce:doi><ce:copyright year="1996" type="full-transfer">Elsevier Science Ltd</ce:copyright></item-info><head><ce:title>Calixarene membranes on semiconductor substrates for E.I.S. chemical sensors</ce:title><ce:author-group><ce:author><ce:given-name>R.</ce:given-name><ce:surname>Mlika</ce:surname><ce:cross-ref refid="AFF1">a</ce:cross-ref></ce:author><ce:author><ce:given-name>H.Ben</ce:given-name><ce:surname>Ouada</ce:surname><ce:cross-ref refid="AFF1">a</ce:cross-ref></ce:author><ce:author><ce:given-name>R.Ben</ce:given-name><ce:surname>Chaabane</ce:surname><ce:cross-ref refid="AFF1">a</ce:cross-ref></ce:author><ce:author><ce:given-name>M.</ce:given-name><ce:surname>Gamoudi</ce:surname><ce:cross-ref refid="AFF2">b</ce:cross-ref><ce:cross-ref refid="CORR1">*</ce:cross-ref></ce:author><ce:author><ce:given-name>G.</ce:given-name><ce:surname>Guillaud</ce:surname><ce:cross-ref refid="AFF2">b</ce:cross-ref></ce:author><ce:author><ce:given-name>N.</ce:given-name><ce:surname>Jaffrezic-Renault</ce:surname><ce:cross-ref refid="AFF3">c</ce:cross-ref></ce:author><ce:author><ce:given-name>R.</ce:given-name><ce:surname>Lamartine</ce:surname><ce:cross-ref refid="AFF4">d</ce:cross-ref></ce:author><ce:affiliation id="AFF1"><ce:label>a</ce:label><ce:textfn>Laboratoire de Physique des Interfaces, Facultédes Sciences de Monastir, 5000 Monastir, Tunisia</ce:textfn></ce:affiliation><ce:affiliation id="AFF2"><ce:label>b</ce:label><ce:textfn>Laboratoire<ce:hsp sp="0.25"></ce:hsp>d’Electronique des Solide UCB Lyon I, 43, Bd du 11 Novembre 1918, F-69622 Villeurbanne, France</ce:textfn></ce:affiliation><ce:affiliation id="AFF3"><ce:label>c</ce:label><ce:textfn>Laboratoire de Physico-chimie des Interfaces, URA CNRS 404 ECL-Lyon, B.P. 163, F-69131 Ecully Cedex, France</ce:textfn></ce:affiliation><ce:affiliation id="AFF4"><ce:label>d</ce:label><ce:textfn>Laboratoire de Chimie Industrielle, UCB Lyon I, 43, Bd du 11 Novembre 1918, F-69622 Villeurbanne, France</ce:textfn></ce:affiliation><ce:correspondence id="CORR1"><ce:label>*</ce:label><ce:text>To whom correspondence should be addressed</ce:text></ce:correspondence></ce:author-group><ce:date-received day="13" month="11" year="1996"></ce:date-received><ce:date-revised day="16" month="5" year="1997"></ce:date-revised><ce:abstract><ce:section-title>Abstract</ce:section-title><ce:abstract-sec><ce:simple-para>Thin <ce:italic>p</ce:italic>-<ce:italic>tert</ce:italic>-butyl calix[4]arene and <ce:italic>p</ce:italic>-<ce:italic>tert</ce:italic>-butyl calix[6]arene films were deposited using the technique of thermal evaporation under vacuum to fabricate chemical microsensors based on an E.I.S. (Electrolyte-Insulator-Semiconductor) structure. Electrochemical capacity measurements were made to test and calibrate physico-chemical sensors with regards to their sensitivity and selectivity. The sensing properties of calix[4]arene and calix[6]arene towards alkaline and heavy metal ions were tested. Both devices have shown Nernstian response and a wide working pH range. The former responded well to sodium ions and the latter to nickel ions, thus partial selectivity for these ions is shown. The improved lifetime (compared with membranes prepared by physical adsorption techniques) and sensitivity observed for these films indicates that these structures are worthy of further developments.</ce:simple-para></ce:abstract-sec></ce:abstract><ce:keywords><ce:section-title>Keywords</ce:section-title><ce:keyword><ce:text>calixarene</ce:text></ce:keyword><ce:keyword><ce:text>sensor</ce:text></ce:keyword><ce:keyword><ce:text>evaporation</ce:text></ce:keyword><ce:keyword><ce:text>electrochemical capacity</ce:text></ce:keyword><ce:keyword><ce:text>isemiconductor</ce:text></ce:keyword></ce:keywords></head></converted-article></istex:document></istex:metadataXml><mods version="3.6"><titleInfo><title>Calixarene membranes on semiconductor substrates for E.I.S. chemical sensors</title></titleInfo><titleInfo type="alternative" contentType="CDATA"><title>Calixarene membranes on semiconductor substrates for E.I.S. chemical sensors</title></titleInfo><name type="personal"><namePart type="given">R.</namePart><namePart type="family">Mlika</namePart><affiliation>Laboratoire de Physique des Interfaces, Facultédes Sciences de Monastir, 5000 Monastir, Tunisia</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">H.Ben</namePart><namePart type="family">Ouada</namePart><affiliation>Laboratoire de Physique des Interfaces, Facultédes Sciences de Monastir, 5000 Monastir, Tunisia</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">R.Ben</namePart><namePart type="family">Chaabane</namePart><affiliation>Laboratoire de Physique des Interfaces, Facultédes Sciences de Monastir, 5000 Monastir, Tunisia</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">M.</namePart><namePart type="family">Gamoudi</namePart><affiliation>Laboratoired’Electronique des Solide UCB Lyon I, 43, Bd du 11 Novembre 1918, F-69622 Villeurbanne, France</affiliation><affiliation>To whom correspondence should be addressed</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">G.</namePart><namePart type="family">Guillaud</namePart><affiliation>Laboratoired’Electronique des Solide UCB Lyon I, 43, Bd du 11 Novembre 1918, F-69622 Villeurbanne, France</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">N.</namePart><namePart type="family">Jaffrezic-Renault</namePart><affiliation>Laboratoire de Physico-chimie des Interfaces, URA CNRS 404 ECL-Lyon, B.P. 163, F-69131 Ecully Cedex, France</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">R.</namePart><namePart type="family">Lamartine</namePart><affiliation>Laboratoire de Chimie Industrielle, UCB Lyon I, 43, Bd du 11 Novembre 1918, F-69622 Villeurbanne, France</affiliation><role><roleTerm type="text">author</roleTerm></role></name><typeOfResource>text</typeOfResource><genre type="research-article" displayLabel="Full-length article"></genre><originInfo><publisher>ELSEVIER</publisher><dateIssued encoding="w3cdtf">1996</dateIssued><dateModified encoding="w3cdtf">1997-05-16</dateModified><copyrightDate encoding="w3cdtf">1996</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm><languageTerm type="code" authority="rfc3066">en</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="en">Thin p-tert-butyl calix[4]arene and p-tert-butyl calix[6]arene films were deposited using the technique of thermal evaporation under vacuum to fabricate chemical microsensors based on an E.I.S. (Electrolyte-Insulator-Semiconductor) structure. Electrochemical capacity measurements were made to test and calibrate physico-chemical sensors with regards to their sensitivity and selectivity. The sensing properties of calix[4]arene and calix[6]arene towards alkaline and heavy metal ions were tested. Both devices have shown Nernstian response and a wide working pH range. The former responded well to sodium ions and the latter to nickel ions, thus partial selectivity for these ions is shown. The improved lifetime (compared with membranes prepared by physical adsorption techniques) and sensitivity observed for these films indicates that these structures are worthy of further developments.</abstract><note type="content">Fig. 1: (a) Calix[n]arene structure; (b) molecular conformation of the calix[4]arene.</note><note type="content">Fig. 2: Schematic structure of the E.I.S.-type sensor used in this work.</note><note type="content">Fig. 3: Variation of capacitance as a function of potential for Si/Si2/calix[4]arene structure for several sodium ion concentrations. Calixarene membrane thickness is about 100nm.</note><note type="content">Fig. 4: Variation of capacitance C(V) vs potential for Si/SiO2/calix[4]arene structure for several sodium concentrations. Calixarene membrane thickness is about 10nm.</note><note type="content">Fig. 5: Variation in the flat band potential ΔVfb as a function of the pNa ion concentration of the calix[4]arene evaporated Si/SiO2 structure.</note><note type="content">Fig. 6: The effect of Na+ concentration on the C(V) characteristics calix[6]arene E.I.S. type sensor (10nm).</note><note type="content">Fig. 7: Variation in the flat band potential as a function of the pX ion concentration for the calix[4]arene E.I.S. structure.</note><note type="content">Fig. 8: Variation in flat band potential as a function of the pX ion concentration for the calix[6]arene E.I.S. structure.</note><note type="content">Fig. 9: Variation in flat band potential as a function of the pNi ion concentration for the calix[6]arene E.I.S. type sensor.</note><note type="content">Fig. 10: Effect of pH on the response of E.I.S. based on calix[6]arene and calix[4]arene at 1×10−3M NiCl2 and 1×10−3M NaNO3.</note><note type="content">Table 1: Characteristics of Ni2+ and Na+ E.I.S. sensor based on p-tert-butyl calix[6]arene and p-tert-butyl calix[4]arene evaporated</note><subject><genre>Keywords</genre><topic>calixarene</topic><topic>sensor</topic><topic>evaporation</topic><topic>electrochemical capacity</topic><topic>isemiconductor</topic></subject><relatedItem type="host"><titleInfo><title>Electrochimica Acta</title></titleInfo><titleInfo type="abbreviated"><title>EA</title></titleInfo><genre type="journal">journal</genre><originInfo><dateIssued encoding="w3cdtf">19971222</dateIssued></originInfo><identifier type="ISSN">0013-4686</identifier><identifier type="PII">S0013-4686(00)X0056-4</identifier><part><date>19971222</date><detail type="volume"><number>43</number><caption>vol.</caption></detail><detail type="issue"><number>8</number><caption>no.</caption></detail><extent unit="issue pages"><start>833</start><end>986</end></extent><extent unit="pages"><start>841</start><end>847</end></extent></part></relatedItem><identifier type="istex">441E39F982E90D0F71E0D80F9B28CA207AA241DE</identifier><identifier type="DOI">10.1016/S0013-4686(97)00259-4</identifier><identifier type="PII">S0013-4686(97)00259-4</identifier><accessCondition type="use and reproduction" contentType="copyright">©1996 Elsevier Science Ltd</accessCondition><recordInfo><recordContentSource>ELSEVIER</recordContentSource><recordOrigin>Elsevier Science Ltd, ©1996</recordOrigin></recordInfo></mods></metadata><serie></serie></istex></record>Pour manipuler ce document sous Unix (Dilib)
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