Auger Si LVV lineshape analysis of porous p‐type silicon electroplated with Fe–Co alloys
Identifieur interne : 000693 ( Istex/Corpus ); précédent : 000692; suivant : 000694Auger Si LVV lineshape analysis of porous p‐type silicon electroplated with Fe–Co alloys
Auteurs : F. Hamadache ; P. BertrandSource :
- Surface and Interface Analysis [ 0142-2421 ] ; 2002-08.
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Abstract
Different electrochemically produced porous p‐type silicon layers filled with Fe–Co alloys are investigated through AES depth profiling. In this study, we analysed the lineshape changes of the Auger Si LVV transition with the sputter depth and alloy composition. Application of factor analysis to this line, together with Fe and Co LVV transitions, enabled us to identify the dominant chemical state of Si atoms at the pore walls. The structure of the Si LVV lineshape of the metallized porous p‐type silicon compared with that of oxidized porous p‐type silicon suggests that Si atoms are slightly bonded to oxygen. Room‐temperature formation of interfacial Si–Fe–Co compounds is likely to occur upon pore filling with the alloy. This is supported by the change of this lineshape with Fe–Co composition and by the appearance of plasmon loss peaks in the Fe and Co LVV lineshapes. Copyright © 2002 John Wiley & Sons, Ltd.
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DOI: 10.1002/sia.1291
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In this study, we analysed the lineshape changes of the Auger Si LVV transition with the sputter depth and alloy composition. Application of factor analysis to this line, together with Fe and Co LVV transitions, enabled us to identify the dominant chemical state of Si atoms at the pore walls. The structure of the Si LVV lineshape of the metallized porous p‐type silicon compared with that of oxidized porous p‐type silicon suggests that Si atoms are slightly bonded to oxygen. Room‐temperature formation of interfacial Si–Fe–Co compounds is likely to occur upon pore filling with the alloy. This is supported by the change of this lineshape with Fe–Co composition and by the appearance of plasmon loss peaks in the Fe and Co LVV lineshapes. Copyright © 2002 John Wiley & Sons, Ltd.</div></front></TEI><istex><corpusName>wiley</corpusName><author><json:item><name>F. 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In this study, we analysed the lineshape changes of the Auger Si LVV transition with the sputter depth and alloy composition. Application of factor analysis to this line, together with Fe and Co LVV transitions, enabled us to identify the dominant chemical state of Si atoms at the pore walls. The structure of the Si LVV lineshape of the metallized porous p‐type silicon compared with that of oxidized porous p‐type silicon suggests that Si atoms are slightly bonded to oxygen. Room‐temperature formation of interfacial Si–Fe–Co compounds is likely to occur upon pore filling with the alloy. This is supported by the change of this lineshape with Fe–Co composition and by the appearance of plasmon loss peaks in the Fe and Co LVV lineshapes. 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