Carrier transport mechanisms in cathodically biased meso‐porous p+‐Si against solutions containing Fe2+ and Co2+ species
Identifieur interne : 000401 ( Istex/Corpus ); précédent : 000400; suivant : 000402Carrier transport mechanisms in cathodically biased meso‐porous p+‐Si against solutions containing Fe2+ and Co2+ species
Auteurs : Farida Hamadache ; Bernard GellozSource :
- physica status solidi c [ 1862-6351 ] ; 2009-07.
English descriptors
Abstract
This work reports on the use of the cyclic voltametry technique to study the electrochemical behavior of porous p+‐type silicon (PS) contacted by aqueous solutions containing Fe2+ and Co2+ electro‐actives species. Current‐potential (I‐V) measurements were performed on both flat and porous silicon substrates and different Fe2+ concentrations were considered. With flat Si, similar I‐V characteristic behaviors were obtained in 0.1 M Fe2+ and 0. 1 M Co2+ solutions, except that iron can be deposited from a potential more cathodic than cobalt. With porous Si, different I‐V characteristic behaviors were observed and a diffusion‐like current peak was detected in the presence of Fe2+ species. The observed current peak is located near the standard redox potential of iron. However, its intensity is lower than that of Fe2+ ions diffusion current peak and it does not increase as Fe2+ concentration increases. A three‐step carrier transport mechanism was proposed to show that the current peak could be attributed to iron nucleation on the pore walls via electroless deposition. Accordingly the difference observed in PS I‐V characteristics was attributed to the fact that electroless deposition on pore walls occurs at a potential for which the reduction of Co2+ ions is faster than that of Fe2+ ones and it can also occur at the pore bottom via electrodeposition. These results are used to explain the poor pore filling rate with iron, reported elsewhere. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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DOI: 10.1002/pssc.200881079
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Status Solidi (c)</title><idno type="ISSN">1862-6351</idno><idno type="eISSN">1610-1642</idno><imprint><publisher>WILEY‐VCH Verlag</publisher><pubPlace>Berlin</pubPlace><date type="published" when="2009-07">2009-07</date><biblScope unit="volume">6</biblScope><biblScope unit="issue">7</biblScope><biblScope unit="page" from="1689">1689</biblScope><biblScope unit="page" to="1693">1693</biblScope></imprint><idno type="ISSN">1862-6351</idno></series><idno type="istex">265CD90F13E2431BF45D3A5BE62A34ED862850C2</idno><idno type="DOI">10.1002/pssc.200881079</idno><idno type="ArticleID">PSSC200881079</idno></biblStruct></sourceDesc><seriesStmt><idno type="ISSN">1862-6351</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>68.37.Hk</term><term>73.40.Mr</term><term>81.05.Rm</term><term>81.15.Pq</term><term>82.45.Yz</term><term>82.80.Fk</term></keywords></textClass><langUsage><language ident="en">en</language></langUsage></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">This work reports on the use of the cyclic voltametry technique to study the electrochemical behavior of porous p+‐type silicon (PS) contacted by aqueous solutions containing Fe2+ and Co2+ electro‐actives species. Current‐potential (I‐V) measurements were performed on both flat and porous silicon substrates and different Fe2+ concentrations were considered. With flat Si, similar I‐V characteristic behaviors were obtained in 0.1 M Fe2+ and 0. 1 M Co2+ solutions, except that iron can be deposited from a potential more cathodic than cobalt. With porous Si, different I‐V characteristic behaviors were observed and a diffusion‐like current peak was detected in the presence of Fe2+ species. The observed current peak is located near the standard redox potential of iron. However, its intensity is lower than that of Fe2+ ions diffusion current peak and it does not increase as Fe2+ concentration increases. A three‐step carrier transport mechanism was proposed to show that the current peak could be attributed to iron nucleation on the pore walls via electroless deposition. Accordingly the difference observed in PS I‐V characteristics was attributed to the fact that electroless deposition on pore walls occurs at a potential for which the reduction of Co2+ ions is faster than that of Fe2+ ones and it can also occur at the pore bottom via electrodeposition. These results are used to explain the poor pore filling rate with iron, reported elsewhere. (© 2009 WILEY‐VCH Verlag GmbH & Co. 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Current‐potential (I‐V) measurements were performed on both flat and porous silicon substrates and different Fe2+ concentrations were considered. With flat Si, similar I‐V characteristic behaviors were obtained in 0.1 M Fe2+ and 0. 1 M Co2+ solutions, except that iron can be deposited from a potential more cathodic than cobalt. With porous Si, different I‐V characteristic behaviors were observed and a diffusion‐like current peak was detected in the presence of Fe2+ species. The observed current peak is located near the standard redox potential of iron. However, its intensity is lower than that of Fe2+ ions diffusion current peak and it does not increase as Fe2+ concentration increases. A three‐step carrier transport mechanism was proposed to show that the current peak could be attributed to iron nucleation on the pore walls via electroless deposition. Accordingly the difference observed in PS I‐V characteristics was attributed to the fact that electroless deposition on pore walls occurs at a potential for which the reduction of Co2+ ions is faster than that of Fe2+ ones and it can also occur at the pore bottom via electrodeposition. These results are used to explain the poor pore filling rate with iron, reported elsewhere. (© 2009 WILEY‐VCH Verlag GmbH & Co. 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Accordingly the difference observed in PS I‐V characteristics was attributed to the fact that electroless deposition on pore walls occurs at a potential for which the reduction of Co2+ ions is faster than that of Fe2+ ones and it can also occur at the pore bottom via electrodeposition. These results are used to explain the poor pore filling rate with iron, reported elsewhere. (© 2009 WILEY‐VCH Verlag GmbH & Co. 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KGaA, Weinheim</copyright><eventGroup><event type="manuscriptReceived" date="2008-03-21"></event><event type="manuscriptRevised" date="2008-10-27"></event><event type="manuscriptAccepted" date="2008-11-17"></event><event type="firstOnline" date="2009-02-09"></event><event type="publishedOnlineFinalForm" date="2009-06-12"></event><event type="xmlConverted" agent="Converter:JWSART34_TO_WML3G version:2.3.2 mode:FullText source:Header result:Header" date="2010-03-16"></event><event type="xmlConverted" agent="Converter:WILEY_ML3G_TO_WILEY_ML3GV2 version:3.8.8" date="2014-02-07"></event><event type="xmlConverted" agent="Converter:WML3G_To_WML3G version:4.1.7 mode:FullText,remove_FC" date="2014-11-03"></event></eventGroup><numberingGroup><numbering type="pageFirst">1689</numbering><numbering type="pageLast">1693</numbering></numberingGroup><correspondenceTo>Phone: +213 771 18 85 95, Fax: +213 21 24 73 44</correspondenceTo><linkGroup><link type="toTypesetVersion" href="file:PSSC.PSSC200881079.pdf"></link></linkGroup></publicationMeta><contentMeta><countGroup><count type="figureTotal" number="6"></count><count type="tableTotal" number="1"></count><count type="referenceTotal" number="13"></count></countGroup><titleGroup><title type="main" xml:lang="en">Carrier transport mechanisms in cathodically biased meso‐porous p<sup>+</sup>‐Si against solutions containing Fe<sup>2+</sup> and Co<sup>2+ </sup>species</title><title type="short" xml:lang="en">Carrier transport mechanisms in cathodically biased meso‐porous p<sup>+</sup>‐Si</title></titleGroup><creators><creator xml:id="au1" creatorRole="author" affiliationRef="#a1 #a2" corresponding="yes"><personName><givenNames>Farida</givenNames><familyName>Hamadache</familyName></personName><contactDetails><email>hamadache_farida@hotmail.com</email></contactDetails></creator><creator xml:id="au2" creatorRole="author" affiliationRef="#a3" noteRef="#fn1"><personName><givenNames>Bernard</givenNames><familyName>Gelloz</familyName></personName><contactDetails><email>bgelloz@cc.tuat.ac.jp</email></contactDetails></creator></creators><affiliationGroup><affiliation xml:id="a1" countryCode="BE" type="organization"><unparsedAffiliation>Unité PCPM, Université Catholique de Louvain, Croix du Sud 1, 1348 Louvain la Neuve, Belgique</unparsedAffiliation></affiliation><affiliation xml:id="a2" countryCode="DZ" type="organization"><unparsedAffiliation>Laboratoire de Physique des Matériaux, Faculté de Physique, Université des Sciences et de la Technologie Houari Boumédiène, BP 32 El‐Alia, 16111 Bab‐Ezzouar, Alger, Algérie</unparsedAffiliation></affiliation><affiliation xml:id="a3" countryCode="JP" type="organization"><unparsedAffiliation>Department of Electrical and Electronic Engineering, Faculty of Technology, Tokyo University of Agriculture & Technology, Japan</unparsedAffiliation></affiliation></affiliationGroup><keywordGroup xml:lang="en" type="author"><keyword xml:id="kwd1">68.37.Hk</keyword><keyword xml:id="kwd2">73.40.Mr</keyword><keyword xml:id="kwd3">81.05.Rm</keyword><keyword xml:id="kwd4">81.15.Pq</keyword><keyword xml:id="kwd5">82.45.Yz</keyword><keyword xml:id="kwd6">82.80.Fk</keyword></keywordGroup><fundingInfo><fundingAgency>Secretariat à la Coopération Internationale (SCO)</fundingAgency></fundingInfo><abstractGroup><abstract type="main" xml:lang="en"><title type="main">Abstract</title><p>This work reports on the use of the cyclic voltametry technique to study the electrochemical behavior of porous p<sup>+</sup>‐type silicon (PS) contacted by aqueous solutions containing Fe<sup>2+</sup> and Co<sup>2+</sup> electro‐actives species. Current‐potential (I‐V) measurements were performed on both flat and porous silicon substrates and different Fe<sup>2+</sup> concentrations were considered. With flat Si, similar I‐V characteristic behaviors were obtained in 0.1 M Fe<sup>2+</sup> and 0. 1 M Co<sup>2+</sup> solutions, except that iron can be deposited from a potential more cathodic than cobalt. With porous Si, different I‐V characteristic behaviors were observed and a diffusion‐like current peak was detected in the presence of Fe<sup>2+ </sup>species. The observed current peak is located near the standard redox potential of iron. However, its intensity is lower than that of Fe<sup>2+</sup> ions diffusion current peak and it does not increase as Fe<sup>2+</sup> concentration increases. A three‐step carrier transport mechanism was proposed to show that the current peak could be attributed to iron nucleation on the pore walls via electroless deposition. Accordingly the difference observed in PS I‐V characteristics was attributed to the fact that electroless deposition on pore walls occurs at a potential for which the reduction of Co<sup>2+</sup> ions is faster than that of Fe<sup>2+</sup> ones and it can also occur at the pore bottom via electrodeposition. These results are used to explain the poor pore filling rate with iron, reported elsewhere. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</p></abstract></abstractGroup></contentMeta><noteGroup><note xml:id="fn1"><p>Phone: + 81 423 88 7433, Fax: +81 423 85 5395</p></note></noteGroup></header></component></istex:document></istex:metadataXml><mods version="3.6"><titleInfo lang="en"><title>Carrier transport mechanisms in cathodically biased meso‐porous p+‐Si against solutions containing Fe2+ and Co2+ species</title></titleInfo><titleInfo type="abbreviated" lang="en"><title>Carrier transport mechanisms in cathodically biased meso‐porous p+‐Si</title></titleInfo><titleInfo type="alternative" contentType="CDATA" lang="en"><title>Carrier transport mechanisms in cathodically biased meso‐porous p+‐Si against solutions containing Fe2+ and Co2+ species</title></titleInfo><name type="personal"><namePart type="given">Farida</namePart><namePart type="family">Hamadache</namePart><affiliation>Unité PCPM, Université Catholique de Louvain, Croix du Sud 1, 1348 Louvain la Neuve, Belgique</affiliation><affiliation>Laboratoire de Physique des Matériaux, Faculté de Physique, Université des Sciences et de la Technologie Houari Boumédiène, BP 32 El‐Alia, 16111 Bab‐Ezzouar, Alger, Algérie</affiliation><description>Correspondence: Phone: +213 771 18 85 95, Fax: +213 21 24 73 44</description><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">Bernard</namePart><namePart type="family">Gelloz</namePart><affiliation>Department of Electrical and Electronic Engineering, Faculty of Technology, Tokyo University of Agriculture & Technology, Japan</affiliation><description>Phone: + 81 423 88 7433, Fax: +81 423 85 5395</description><affiliation>E-mail: bgelloz@cc.tuat.ac.jp</affiliation><role><roleTerm type="text">author</roleTerm></role></name><typeOfResource>text</typeOfResource><genre type="article" displayLabel="article"></genre><originInfo><publisher>WILEY‐VCH Verlag</publisher><place><placeTerm type="text">Berlin</placeTerm></place><dateIssued encoding="w3cdtf">2009-07</dateIssued><dateCaptured encoding="w3cdtf">2008-03-21</dateCaptured><dateValid encoding="w3cdtf">2008-11-17</dateValid><copyrightDate encoding="w3cdtf">2009</copyrightDate></originInfo><language><languageTerm type="code" authority="rfc3066">en</languageTerm><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType><extent unit="figures">6</extent><extent unit="tables">1</extent><extent unit="references">13</extent></physicalDescription><abstract lang="en">This work reports on the use of the cyclic voltametry technique to study the electrochemical behavior of porous p+‐type silicon (PS) contacted by aqueous solutions containing Fe2+ and Co2+ electro‐actives species. Current‐potential (I‐V) measurements were performed on both flat and porous silicon substrates and different Fe2+ concentrations were considered. With flat Si, similar I‐V characteristic behaviors were obtained in 0.1 M Fe2+ and 0. 1 M Co2+ solutions, except that iron can be deposited from a potential more cathodic than cobalt. With porous Si, different I‐V characteristic behaviors were observed and a diffusion‐like current peak was detected in the presence of Fe2+ species. The observed current peak is located near the standard redox potential of iron. However, its intensity is lower than that of Fe2+ ions diffusion current peak and it does not increase as Fe2+ concentration increases. A three‐step carrier transport mechanism was proposed to show that the current peak could be attributed to iron nucleation on the pore walls via electroless deposition. Accordingly the difference observed in PS I‐V characteristics was attributed to the fact that electroless deposition on pore walls occurs at a potential for which the reduction of Co2+ ions is faster than that of Fe2+ ones and it can also occur at the pore bottom via electrodeposition. These results are used to explain the poor pore filling rate with iron, reported elsewhere. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</abstract><note type="funding">Secretariat à la Coopération Internationale (SCO)</note><subject lang="en"><genre>keywords</genre><topic>68.37.Hk</topic><topic>73.40.Mr</topic><topic>81.05.Rm</topic><topic>81.15.Pq</topic><topic>82.45.Yz</topic><topic>82.80.Fk</topic></subject><relatedItem type="host"><titleInfo><title>physica status solidi c</title></titleInfo><titleInfo type="abbreviated"><title>Phys. Status Solidi (c)</title></titleInfo><genre type="journal">journal</genre><subject><genre>article-category</genre><topic>Contributed Article</topic></subject><identifier type="ISSN">1862-6351</identifier><identifier type="eISSN">1610-1642</identifier><identifier type="DOI">10.1002/(ISSN)1610-1642a</identifier><identifier type="PublisherID">PSSC</identifier><part><date>2009</date><detail type="title"><title>6th International Conference on Porous Semiconductor Science and Technology (PSST 2008)</title></detail><detail type="volume"><caption>vol.</caption><number>6</number></detail><detail type="issue"><caption>no.</caption><number>7</number></detail><extent unit="pages"><start>1689</start><end>1693</end><total>5</total></extent></part></relatedItem><relatedItem type="preceding"><titleInfo><title>physica status solidi (c)</title></titleInfo><identifier type="ISSN">1610-1634</identifier><part><date point="end">2005</date><detail type="volume"><caption>last vol.</caption><number>2</number></detail><detail type="issue"><caption>last no.</caption><number>12</number></detail></part></relatedItem><identifier type="istex">265CD90F13E2431BF45D3A5BE62A34ED862850C2</identifier><identifier type="DOI">10.1002/pssc.200881079</identifier><identifier type="ArticleID">PSSC200881079</identifier><accessCondition type="use and reproduction" contentType="copyright">Copyright © 2009 WILEY‐VCH Verlag GmbH & Co. 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