Semi-conducteurs < Semiconducteur < Semiconducteur II-VI

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List of bibliographic references

Number of relevant bibliographic references: 34.
[0-20] [0 - 20][0 - 34][20-33][20-40]

Ident.	Authors (with country if any)	Title
000236 (2011)	JISEN ZHANG [République populaire de Chine] ; CHUNYAN CAO [République populaire de Chine] ; SHAOZHE LU [République populaire de Chine] ; Wei-Ping Qin [République populaire de Chine]	Energy Transition between Yb3+-Tm3+-Gd3+ in Gd3+, Yb3+and Tm3+ Co-doped Fluoride Nanocrystals
000709 (2007)	M. Dongol [Égypte] ; M. M. El-Nahass [Égypte] ; M. Abou-Zied [Égypte] ; A. El-Denglawey [Égypte]	Thermoelectric properties and mobility activation energy of amorphous As20Se80- xTlx films
000867 (2006)	S. A. M. Lima [Brésil] ; M. R. Davolos [Brésil] ; C. Legnani [Brésil] ; W. G. Quirino [Brésil] ; M. Cremona [Brésil]	Low voltage electroluminescence of terbium- and thulium-doped zinc oxide films
000935 (2005)	T. Andreev [France] ; Y. Hori [France, Japon] ; X. Biquard [France] ; E. Monroy [France] ; D. Jalabert [France] ; A. Farchi [France] ; M. Tanaka [Japon] ; O. Oda [Japon] ; Le Si Dang [France] ; B. Daudin [France]	Optical and morphological properties of GaN quantum dots doped with Tm
000943 (2005)	Jean-Michel Mignot [France] ; Igor N. Goncharenko [France] ; Takeshi Matsumura [Japon] ; Takashi Suzuki [Japon]	Magnetic phase diagram of the mixed-valence semiconductor TmSe under multi-extreme (P, H, T) conditions
000992 (2004-03-01)	P. Wachter [Suisse] ; B. Bucher [Suisse] ; J. Malar [Suisse]	Possibility of a superfluid phase in a Bose condensed excitonic state
000A17 (2004)	John B. Gruber [États-Unis] ; Ulrich Vetter [Allemagne] ; Hans Hofs Ss [Allemagne] ; Bahram Zandi [États-Unis] ; Michael F. Reid [Nouvelle-Zélande]	Spectra and energy levels of Tm3+(4f12) in AlN
000B37 (2003)	E. Rita [Portugal] ; E. Alves [Portugal] ; U. Wahl [Portugal] ; J. G. Correia [Portugal] ; A. J. Neves [Portugal] ; M. J. Soares [Portugal] ; T. Monteiro [Portugal]	Optical doping of ZnO with Tm by ion implantation
000B68 (2003)	P. Wachter [Suisse] ; . B. Bucher [Suisse] ; J. Malar [Suisse]	Evidence of a superfluid phase in a bose condensed excitonic state
000E07 (2001)	Yoshiki Nakanishi [Japon] ; Takeshi Matsumura [Japon] ; Fumihiko Takahashi [Japon] ; Takuo Sakon [Japon] ; Takashi Suzuki [Japon] ; Mitsuhiro Motokawa [Japon]	Magnetic properties of unusual metal system TmS in high magnetic fields
001571 (1995)	N. Imanaka [Japon] ; Y. Hirota ; G.-Y. Adachi	Selective nitrogen dioxide gas sensor based on rare earth cuprate semiconductors
001756 (1994)	P. Wachter [Suisse] ; A. Jung	Intermediate valence and the possiblity of a magnetic excitonic insulator
001905 (1993)	S. Bachir [France] ; J. C. Ronfard-Haret ; K. Azuma ; D. Kouyate ; J. Kossanyi	Direct impact excitation of thulium (III) luminescence in polycrystalline ZnO:Tm3+ electrodes in contact with an aqueous electrolyte, and attribution of the luminescence spectrum
001937 (1992)	K. Pressel [Allemagne] ; J. Weber ; C. Hiller ; D. Ottenw Lder ; W. Kürner ; A. Dörnen ; F. Scholz ; K. Locke ; D. Wiedmann ; F. Cordeddu	Tm3+-related emissions in III-V semiconductors grown by metalorganic vapor phase epitaxy
001939 (1992)	F. Scholz [Allemagne] ; J. Weber [Allemagne] ; D. Ottenw Lder [Allemagne] ; K. Pressel [Allemagne] ; C. Hiller [Allemagne] ; A. Dörnen [Allemagne] ; K. Locke ; F. Cordeddu ; D. Wiedmann	Tm doping of III-V semiconductors by MOVPE
001974 (1992)	G. S. Pomrenke [États-Unis] ; E. Silkowski ; J. E. Colon ; D. J. Topp ; Y. K. Yeo ; R. L. Hengehold	Luminescence of thulium in III-V semiconductors and silicon
001999 (1992)	A. K. Pandit [Inde] ; B. M. Wanklyn ; T. H. Ansari [Inde] ; R. A. Singh [Inde]	Electrical conduction in Tm2Ti2O7 single crystal
001A56 (1991)	A. S. Mishchenko [Russie] ; K. A. Kikoin	Lattice dynamics of rare-earth semiconductors with unstable valence
001A61 (1991)	B. A. Akimov [Russie] ; E. N. Korobeinkilova ; L. I. Ryabova ; M. E. Tamm	Influence of Tm on the properties of lead telluride
001A81 (1991)	R. Boyn ; M. J. Kozielski ; H. Zimmermann	Distribution of Tm centers incorporated in ZnS single crystal during high-pressure Bridgman growth
001A82 (1991)	D. E. Nazyrov [Russie] ; G. S. Kulikov ; R. S. Makovich ; A. Tybulewicz	Diffusion of erbium and thulium in silicon

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