Le cluster E. Alves - K. Lorenz
| 000179 (2006) | T. Wojtowicz [France] ; F. Gloux [France] ; P. Ruterana [France] ; G. Nouet [France] ; L. Bodiou [France] ; A. Braud [France] ; K. Lorenz [Portugal] ; E. Alves [Portugal] | Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaN |
| 000183 (2006) | S. Hernandez [Royaume-Uni] ; R. Cusco [Espagne] ; L. Artus [Espagne] ; E. Nogales [Royaume-Uni] ; R. W. Martin [Royaume-Uni] ; K. P. O'Donnell [Royaume-Uni] ; G. Halambalakis [France] ; O. Briar [France] ; K. Lorenz [Portugal] ; E. Alves [Portugal] | Lattice order in thulium-doped GaN epilayers : In situ doping versus ion implantation |
| 000192 (2005-05-30) | S. Hernandez ; R. Cusco ; L. Artus ; E. Nogales ; Rw Martin ; Kp O'Donnell ; G. Halambalakis ; Olivier Briot [France] ; K. Lorenz ; E. Alves | Lattice order in thulium-doped GaN epilayers: In situ doping versus ion implantation |
| 000178 (2006) | T. Wojtowicz [France] ; F. Gloux [France] ; P. Ruterana [France] ; K. Lorenz [Portugal] ; E. Alves [Portugal] | TEM investigation of Tm implanted GaN, the influence of high temperature annealing |
| 000153 (2007) | L. Bodiou [France] ; A. Braud [France] ; C. Terpin [France] ; J. L. Doualan [France] ; R. Moncorge [France] ; K. Lorenz [Portugal] ; E. Alves [Portugal] | Spectroscopic investigation of implanted epilayers of Tm3+:GaN |
| 000342 (1998) | E. Alves [Portugal] ; M. F. Da Silva [Portugal] ; J. C. Soares [Portugal] ; M. O. Henry [Irlande (pays)] ; R. Gwilliam [Royaume-Uni] ; B. J. Sealy [Royaume-Uni] ; K. Freitag [Allemagne] ; R. Vianden [Allemagne] ; D. Stievenard [France] | Lattice site location of thulium and erbium implanted GaAs |
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