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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Keywords » - entrée « p n junctions »
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p n junction < p n junctions < p p+ junction  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 14.
Ident.Authors (with country if any)Title
000091 (2010) Type II heterostructures with InSb quantum dots inserted into p-n InAs(Sb,P) junction
000151 (2009) InSb quantum dots and quantum rings in a narrow-gap InAsSbP matrix
000413 (2004-04) Investigation of Characteristics of InSb-Based Photodiode Linear Arrays
000828 (2002) High-power semiconductor 0.89-1.06-μm lasers with a low emission divergence based on strained quantum-well InGaAs/(Al)GaAs structures
000908 (2001-04) Photodiodes for a 1.5-4.8 μm Spectral Range Based on Type-II GaSb/InGaAsSb Heterostructures
000A43 (2000-09-20) Tunable InAsSb/InAsSbP Laser with a Low Radiation Divergence in the p-n-Junction Plane
000B14 (2000-03) Influence of Humidity and Hydrogen on the Charge Transport in p-InP Diode Structures with a Palladium Contact
000C39 (1999-10) Luminescence properties of InAs layers and p-n structures grown by metallorganic chemical vapor deposition
000D54 (1999) Semiconductor lasers with broad tunnel-coupled waveguides, emitting at a wavelength of 980 nm
000D61 (1999) Powerful AlGaAs/InGaAs/GaAs-based diode lasers with a wavelength of 1.06 μm and a reduced divergence in the plane perpendicular to the p - n junction
001023 (1997-07) Longitudinal photoeffect in In0.53Ga0.47As p-n junctions
001065 (1997-01) Cathodoluminescence of p-n-p microstructures in CuInSe2 crystals
001090 (1997) Semiconductor lasers with tunnel-coupled waveguides emitting at the wavelength of 980 nm
001181 (1996-06) Avalanche multiplication coefficients of carriers in p-n structures

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