Serveur d'exploration sur l'Indium - Analysis (Russie)

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p i n photodiodes < p n heterojunctions < p n junction  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.
Ident.Authors (with country if any)Title
000528 (2003-08) Negative Luminescence at 3.9 μm in InGaAsSb-Based Diodes
000719 (2002-09) Stark Effect in Vertically Coupled Quantum Dots in InAs-GaAs Heterostructures
000818 (2002) Interface-induced electroluminescence in the type II P-Ga0.84In0.16As0.22Sb0.78/ n-In0.83Ga0.17As0.82Sb0.18 single heterojunction
000862 (2001-12) InAsSb/InAsSbP Double-Heterostructure Lasers Emitting in the 3-4 μm Spectral Range
000864 (2001-11) The Influence of Vacuum Conditions on the Microwave Generation in a Vircator
000870 (2001-10) Study of Electron Capture by Quantum Dots Using Deep-Level Transient Spectroscopy
000902 (2001-05) Light Emitting Diodes for the Spectral Range λ = 3.3-4.3 μm Fabricated from InGaAs and InAsSbP Solid Solutions: Electroluminescence in the Temperature Range of 20-180°C (Part 21)
000916 (2001-03) Negative Luminescence in p-InAsSbP/n-InAs Diodes
000997 (2001) Energy diagram and recombination mechanisms in InGaN/AlGaN/GaN heterostructures with quantum wells
000E88 (1998-04) Electric and photoelectric properties of n-GaxIn1-xN/p-Si anisotypic heterojunctions

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