Serveur d'exploration sur l'Indium - Analysis (Russie)

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List of bibliographic references

Number of relevant bibliographic references: 39.
[0-20] [0 - 20][0 - 39][20-38][20-40]
Ident.Authors (with country if any)Title
000001 (2014) Tailoring the Indium island sizes on the Silicon surface by controlling the deposition rate. Interplay between the size selectivity due to the quantum confinement effect and kinetic factors
000030 (2012) Submicron Raman and photoluminescence topography of InAs/Al(Ga)As quantum dots structures
000054 (2011) Tunnel injection emitter structures with barriers comprising nanobridges
000310 (2006) Misfit dislocations in nanocomposites with quantum dots, nanowires and their ensembles
000318 (2006) Formation and evolution of multimodal size distributions of InAs/GaAs quantum dots
000344 (2005) SXPS investigation of the Cd partial electrolyte treatment of CuInSe2 absorbers
000495 (2004) 1.3-1.5 μm electroluminescence from Schottky diodes made on Au-InAs/GaAs quantum-size heterostructures
000602 (2003) Structural perfection of four-layer GaxIn1-xAsyP1-y laser heterostructures
000612 (2003) Raman studies as a tool for characterization of the strained hexagonal GaN/AlxGa1-xN superlattices
000802 (2002) Optical and transport properties of short-period InAs/GaAs superlattices near quantum dot formation
000812 (2002) Metalorganic chemical vapor deposition of oxide films on semiconductor substrates using aluminum, gallium, and indium alkyl chloride precursors
000842 (2002) Dislocation dipoles in nanoscale films with compositional inhomogeneities
000D66 (1999) Phase composition and properties of zirconia films doped with oxides of trivalent elements
001120 (1997) Electronic g factor in biased quantum wells
001161 (1996-08) Optical emission range of structures with strained InAs quantum dots in GaAs
001282 (1995-10-23) InGaAsP/GaAs elastically strained quaternary solid solutions with high critical thicknesses grown by liquid phase epitaxy
001332 (1995-02) Strained thin-layer InAs1-x-ySbxBiy/InSb heterostructures: calculation of certain physical properties
001425 (1994-08) Effect of deposition conditions on the formation of (In,Ga)As quantum clusters in a GaAs matrix
001439 (1994-05) Study of InP/InGaAs heterostructures by a photovoltage method using an organic liquid
001444 (1994-04) Growth of (In,Ga)As/GaAs quantum-well heterostructures through the deposition of ''submonolayer'' strained InAs layers
001557 (1993) Josephson properties of the three-dimensional regular lattice of the weakly coupled nanoparticles

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