Substrate < Substrates < Substructure

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List of bibliographic references

Number of relevant bibliographic references: 24.
[0-20] [0 - 20][0 - 24][20-23][20-40]

Ident.	Authors (with country if any)	Title
000718 (2002-09)		Structural and Electrical Characteristics of Epitaxial InP Layers on Porous Substrates and the Parameters of Related Au-Ti Schottky Barriers
000781 (2002)		Type II GaSb based photodiodes operating in spectral range 1.5-4.8 μm at room temperature
000782 (2002)		Towards longwave (5-6 μm) LED operation at 80°C: Injection or extraction of carriers?
000791 (2002)		Single mode laser based on InAsSb/InAsSbP double heterostructure with tuning from 3.224 to 3.234 μm
000812 (2002)		Metalorganic chemical vapor deposition of oxide films on semiconductor substrates using aluminum, gallium, and indium alkyl chloride precursors
000844 (2002)		Determination of the melt undercooling required for producing AlxGayIn1-x-ySb1-zBiz/InSb heterostructures
000939 (2001)		Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces
000984 (2001)		InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates
000A93 (2000-04-01)		Composition and Surface Structure of Quantum Chains on a In/Si(111) Surface
000B73 (2000)		Interaction between thin indium films and single-crystal ZnAs2 substrates
000C77 (1999-07)		Influence of a sapphire substrate on the emission spectra of gallium nitride light-emitting diodes
000E01 (1999)		Effect of GaAs(001) surface misorientation on the emission from MBE grown InAs quantum dots
000E07 (1999)		Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate
000E09 (1999)		Characteristics of the InAs quantum dots MBE grown on the vicinal GaAs(0 0 1) surfaces misoriented to the [010] direction
000E15 (1999)		3.9 W CW power from sub-monolayer quantum dot diode laser
000E71 (1998-05-15)		Structural model for the Si(100)4×3-In surface phase
000E80 (1998-05)		Effect of substrate misorientation on quantum-dot size distribution in the InAs/GaAs system
000F70 (1998)		Bicrystallography of the epitaxic systems 'III-V nitrides on sapphire' : Theory and experiment
000F79 (1997-12)		Silicon and phosphorus co-implantation into undoped and indium-doped GaAs substrates
001112 (1997)		Influence of Al adsorption on In and Ga thermal desorption from InP and GaAs surfaces heated under As4 flux
001113 (1997)		InGaAsSb growth from Sb-rich solutions

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