Semiconductor quantum dots < Semiconductor quantum wells < Semiconductor quantum wires

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List of bibliographic references

Number of relevant bibliographic references: 93.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000003 (2013)		Towards an Integrated Mode-Locked Microlaser Based on Two-Dimensional Photonic Crystals and Graphene
000047 (2012)		Effects of phonon confinement on high-electric field electron transport in an InGaAs/InAlAs quantum well with an inserted InAs barrier
000395 (2004-06-25)		Experimental Separation of Rashba and Dresselhaus Spin Splittings in Semiconductor Quantum Wells
000397 (2004-06-07)		Asymmetric AlAsSb/InAs/CdMgSe quantum wells grown by molecular-beam epitaxy
000402 (2004-06)		Electron-Electron Scattering in Stepped Quantum Wells
000403 (2004-06)		Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range
000405 (2004-05)		Luminescence of Stepped Quantum Wells in GaAs/GaAlAs and InGaAs/GaAs/GaAlAs Structures
000412 (2004-04)		Studies of Physical Phenomena in Semiconductor Nanostructures Using Samples with Laterally Nonuniform Layers: Photoluminescence of Tunneling-Coupled Quantum Wells
000416 (2004-03-15)		Landau level structures and semimetal-semiconductor transition in strained InAs/GaSb quantum wells
000417 (2004-03)		Structural and Optical Properties of Heterostructures with InAs Quantum Dots in an InGaAsN Quantum Well Grown by Molecular-Beam Epitaxy
000419 (2004-03)		Internal Optical Loss in Semiconductor Lasers
000497 (2003-12-15)		Ultrafast polarization dynamics in biased quantum wells under strong femtosecond optical excitation
000499 (2003-12)		Room-Temperature 1.5-1.6 μm Photoluminescence from InGaAs/GaAs Heterostructures Grown at Low Substrate Temperature
000511 (2003-10-15)		Magnetic-field-induced recovery of resonant tunneling into a disordered quantum well subband
000513 (2003-10-13)		Electrically tunable mid-infrared electroluminescence from graded cascade structures
000523 (2003-09)		Electrical Properties and Luminescence Spectra of Light-Emitting Diodes Based on InGaN/GaN Heterostructures with Modulation-Doped Quantum Wells
000542 (2003-06-15)		Kinetics of highly spin-polarized electron photoemission from an InGaAlAs strained layer by energy and spin-resolved measurements
000548 (2003-05-15)		Electron-electron interaction with decreasing conductance
000563 (2003-03-01)		Injection cascade lasers with graded gap barriers
000565 (2003-03)		Investigation of the Physical Properties of Semiconductor Nanostructures Using Samples with Laterally Nonuniform Layers: 1. Photoluminescence
000571 (2003-02)		Segregation of Indium in InGaAs/GaAs Quantum Wells Grown by Vapor-Phase Epitaxy

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