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Serveur d'exploration sur l'Indium - Analysis (Russie)

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Reciprocal lattice < Recombination < Recombination center  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 14.
Ident.Authors (with country if any)Title
001172 (1996-07) Lasing inhomogeneities in buried channel lasers with a p-GaInAsSb active region
001177 (1996-06) Optical properties of a two-dimensional electron gas in AlGaAs/GaAs heterostructures
001275 (1995-12) Characteristic features of the temperature dependence of the threshold current density of GaInAsSb double-heterostructure lasers with a thin active region
001280 (1995-11) Determination of the diffusion-recombination parameters of semiconductors by a contact-free method
001319 (1995-04-24) Electron-Hole Transitions between States with Nonzero Angular Momenta in the Magnetoluminescence of Quantum Dots
001333 (1995-02) Radiative recombination processes in double InAsSbP/InAsSb/InAsSbP heterostructures
001426 (1994-07-25) Fine structure in the photoluminescence line of a quasi-2D electron Landau level: Initial or final state origin?
001428 (1994-07-01) Time-resolved investigations of excitonic recombination in highly strained InAs/Al0.48In0.52As quantum wells
001429 (1994-07) Temperature dependence of the photoluminescence of InxGa1-xAs/GaAs quantum-well structures
001430 (1994-07) Radiative recombination in heterostructure LEDs based on limiting-composition GaInAsSb
001432 (1994-06) Tunneling-recombination currents in nonideal InGaAsP/InP heterostructures
001434 (1994-06) Recombination near an N-n-GaSb/GaInAsSb heterojunction
001575 (1993) Electron structure of rare-earth impurities in III-V compounds (a review article)
001578 (1993) Effect of recombination in the space charge region of the illuminance characteristics of the surface photo-emf of GaAs and InP

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