Quantum well devices < Quantum well lasers < Quantum wells

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List of bibliographic references

Number of relevant bibliographic references: 66.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000064 (2011)		Quantum well laser with an extremely large active layer width to optical confinement factor ratio for high-energy single picosecond pulse generation by gain switching
000149 (2009)		Intracavity terahertz difference-frequency generation in an InGaAs-quantum-well two-frequency InGaAsP/InP laser
000203 (2008)		Influence of the InGaAs/(Al)GaAs quantum-well heterostructure growth features on the spectral characteristics of laser diodes
000218 (2008)		Bleaching effect in passive regions of powerful 1.02 μm InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure
000341 (2005)		Spectral perturbations in a semiconductor laser: I. Anomalous splitting in the mode-beating spectrum
000382 (2005)		Effect of GaAsP barrier layers on the parameters of InGaAs/AlGaAs laser diodes emitting in the 1050- 1100-nm spectral range
000406 (2004-05)		Low-Threshold 1.3-μm Injection Lasers Based on Single InGaAsN Quantum Wells
000510 (2003-11)		1.7-1.8 μm Diode Lasers Based on Quantum-Well InGaAsP/InP Heterostructures
000553 (2003-05)		Longwave Generation in Laser Structures Based on InGaAs(N) Quantum Wells on GaAs Substrates
000561 (2003-04)		Current and Temperature Tuning of Quantum-Well Lasers Operating in 2.0- to 2.4-μm Range
000573 (2003-02)		Population Inversion between Γ Subbands in Quantum Wells under the Conditions of Γ-L Intervalley Transfer
000587 (2003-01-01)		Voltage distributions and nonoptical catastrophic mirror degradation in high power InGaAs/AlGaAs/GaAs lasers studied by Kelvin probe force microscopy
000600 (2003)		Study of high power GaAs-based laser diodes operation and failure by cross-sectional electrostatic force microscopy
000608 (2003)		SC DHS InGaAsP/InP lasers (λ = 1.5-1.6 μm) with above-threshold internal quantum efficiency ηsti about 100%
000628 (2003)		Non-linear power-current characteristics of quantum well lasers at high injection
000647 (2003)		Influence of intraband relaxation processes on threshold and power-current characteristics of quantum well lasers
000662 (2003)		High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells
000684 (2003)		Effect of parasitic elements of a ridge laser on its modulation characteristic
000699 (2003)		14XX nm pump lasers for Raman and Er3+ doped fiber amplifiers
000708 (2002-11-11)		Spectrotemporal response of 1.3 μm quantum-dot lasers
000764 (2002-03)		Analysis of Threshold Current Density and Optical Gain in InGaAsP Quantum Well Lasers

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