MOS technology < MOVPE method < Macrocycle

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List of bibliographic references

Number of relevant bibliographic references: 25.
[0-20] [0 - 20][0 - 25][20-24][20-40]

Ident.	Authors (with country if any)	Title
000002 (2013)		Uniform InSb quantum dots buried in narrow-gap InAs(Sb,P) matrix
000065 (2011)		Quantum dots and quantum dashes in the narrow-gap InSb/InAsSbP system
000074 (2011)		MOVPE of device-oriented wide-band-gap III-N heterostructures
000091 (2010)		Type II heterostructures with InSb quantum dots inserted into p-n InAs(Sb,P) junction
000111 (2010)		Laterally overgrown GaN/InGaN multi-quantum well heterostructures: Electrical and optical properties
000150 (2009)		InSb quantum dots and quantum rings on InAs-rich surface
000151 (2009)		InSb quantum dots and quantum rings in a narrow-gap InAsSbP matrix
000156 (2009)		High-power single-mode laser diodes based on carbon-doped quantum-well InGaAs/AIGaAs heterostructures
000183 (2008)		Type II GaAsxSb1-x/InAs (x<0.35) heterojunction grown by MOVPE near a miscibility gap of the ternary solid solution
000201 (2008)		MOVPE growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures
000212 (2008)		Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs
000213 (2008)		Double integrated nanostructures for pulsed 0.9-μm laser diodes
000233 (2007)		Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templates
000239 (2007)		Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor®
000246 (2007)		InGaN-based epilayers and quantum wells with intense room-temperature photoluminescence in the 500-650 nm range
000250 (2007)		Growth of InN films and nanorods by H-MOVPE
000371 (2005)		Hole-hole interaction in a strained InxGa1-xAs two-dimensional system
000450 (2004)		Scanning e-beam pumped resonant periodic gain VCSEL based on an MOVPE-grown GaInP/A1GaInP MQW structure
000491 (2004)		Correlations between electrical and optical properties for OMVPE InN
000618 (2003)		Powerful InAsSbP/InAsSb light emitting diodes grown by MOVPE
000651 (2003)		InGaAsN/GaAs QD and QW structures grown by MOVPE

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