Gallium Antimonides bismuthides < Gallium Arsenides < Gallium Arsenides Mixed

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 148.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000034 (2012)		Plasmonic modulator based on gain-assisted metal-semiconductor-metal waveguide
000047 (2012)		Effects of phonon confinement on high-electric field electron transport in an InGaAs/InAlAs quantum well with an inserted InAs barrier
000064 (2011)		Quantum well laser with an extremely large active layer width to optical confinement factor ratio for high-energy single picosecond pulse generation by gain switching
000066 (2011)		Quantum dot laser
000068 (2011)		Photoreflectance study of indium segregation in the InGaAs quantum well
000088 (2011)		115 fs pulses from Yb3+:KY(WO4)2 laser with low loss nanostructured saturable absorber
000093 (2010)		Sub-20 nm island self-organisation stimulated by spatially periodic laser exposure in the GaAs/InGaAs/GaAs epitaxial system
000095 (2010)		Semiconductor Nanostructures Modified by the UV Laser Radiation
000110 (2010)		Leaky-wave semiconductor laser with improved energetic characteristics and very narrow dirrectional pattern
000120 (2010)		Edge-emitting InGaAs/GaAs laser with high temperature stability of wavelength and threshold current
000124 (2010)		Compact optoelectronic oscillators using WGM modes on fused silica and MgF2 mini-disks resonators
000128 (2010)		Applying the joint Wigner time-frequency distribution to characterization of ultra-short optical dissipative solitary pulses in the actively mode-locked semiconductor laser with an external single-mode fiber cavity
000136 (2009)		Stimulated-emission wavelength switching in optically pumped InGaAs/AIGaInAs laser heterostructures
000149 (2009)		Intracavity terahertz difference-frequency generation in an InGaAs-quantum-well two-frequency InGaAsP/InP laser
000156 (2009)		High-power single-mode laser diodes based on carbon-doped quantum-well InGaAs/AIGaAs heterostructures
000157 (2009)		High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm
000173 (2009)		Characterization of the time-frequency parameters inherent in the radiation of semiconductor heterolasers using interferometric technique
000174 (2009)		Cavity-enhanced emission in electrically driven quantum dot single-photon-emitters
000189 (2008)		Quantum dot photonics : edge emitter, amplifier and VCSEL
000190 (2008)		Quantum dot diode lasers for optical communication systems
000192 (2008)		Optimisation of waveguide parameters of laser InGaAs/AlGaAs/GaAs heterostructures for obtaining the maximum beam width in the resonator and the maximum output power

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Russie/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/KwdEn.i -k "Gallium Arsenides" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/KwdEn.i  \
                -Sk "Gallium Arsenides" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Russie
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Gallium Arsenides
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024