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Serveur d'exploration sur l'Indium - Analysis (Russie)

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Electronic conductivity < Electronic density of states < Electronic properties  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 17.
Ident.Authors (with country if any)Title
000103 (2010) On the electronic origin of the inverse magnetocaloric effect in Ni-Co-Mn-In Heusler alloys
000197 (2008) Molecular Doping of Graphene
000546 (2003-06) Magnetic Susceptibility and Superconductivity of (Pb0.2Sn0.8)1 - xInxTe Alloys as a Function of In Content
000676 (2003) Electronic structure and chemical bonding of phosphorus-contained sulfides InPS4, TI3PS4, and Sn2P2S6
000769 (2002-02) Optical Absorption in (Pb0.78Sn0.22)1 - XInXTe (X = 0.001 - 0.005)
000839 (2002) Disorder-induced exciton localization in 2D wide-gap semiconductor solid solutions
000924 (2001-02) Hopping Transport in Doped (Pb0.78Sn0.22)1 - xInxTe Solid Solutions
000997 (2001) Energy diagram and recombination mechanisms in InGaN/AlGaN/GaN heterostructures with quantum wells
000A09 (2001) Comparative study of InGaN/GaN structures grown by MOCVD using various growth sequences
000C44 (1999-10) Determination of the density of states in quantum wells and quantum dot arrays by the capacitance-voltage method
000D38 (1999-01) Quasi-gapless semiconductor: p-type indium arsenide
000E67 (1998-06) Electron states in quantum-dot and antidot arrays placed in a strong magnetic field
001005 (1997-09) Quantum-dot lasers: Principal components of the threshold current density
001006 (1997-09) Photoelectric properties of GaAs/InAs heterostructures with quantum dots
001043 (1997-04) Interface phenomena and optical properties of structurally confined InP quantum wire ensembles.
001061 (1997-01) Photoluminescence of InSb quantum dots in GaAs and GaSb matrices
001064 (1997-01) Depth distribution of deep-level centers in silicon dioxide near an interface with indium phosphide

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