Current < Current density < Current limiter

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List of bibliographic references

Number of relevant bibliographic references: 42.
[0-20] [0 - 20][0 - 42][20-40]

Ident.	Authors (with country if any)	Title
000189 (2008)		Quantum dot photonics : edge emitter, amplifier and VCSEL
000219 (2008)		A 1.33 μm InAs/GaAs quantum dot laser with a 46 cm-1 modal gain
000224 (2007)		The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency
000241 (2007)		MBE-grown metamorphic lasers for applications at telecom wavelengths
000331 (2006)		1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance
000367 (2005)		Long-wavelength lasers based on metamorphic quantum dots
000372 (2005)		High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system
000373 (2005)		High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence
000377 (2005)		Epitaxial growth of quantum-dot heterostructures on metamorphic buffers
000403 (2004-06)		Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range
000450 (2004)		Scanning e-beam pumped resonant periodic gain VCSEL based on an MOVPE-grown GaInP/A1GaInP MQW structure
000457 (2004)		Optimisation of doping cladding layers in AlGaInP/GaInP laser heterostructures
000514 (2003-10)		Temperature Characteristics of Low-Threshold High-Efficiency Quantum-Dot Lasers with the Emission Wavelength from 1.25 to 1.29 μm
000553 (2003-05)		Longwave Generation in Laser Structures Based on InGaAs(N) Quantum Wells on GaAs Substrates
000611 (2003)		Recent advances in long wavelength GaAs-based quantum dot lasers
000764 (2002-03)		Analysis of Threshold Current Density and Optical Gain in InGaAsP Quantum Well Lasers
000824 (2002)		InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with high (88%) differential efficiency
000B81 (2000)		Improved catastrophic optical mirror damage level in InGaAs/AlGaAs laser diodes
000C09 (2000)		8 W continuous wave operation of InGaAsN lasers at 1.3 μm
000C45 (1999-09-27)		Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates
000C58 (1999-09)		Gain characteristics of quantum-dot injection lasers

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