Crystal growth from solutions < Crystal growth from vapors < Crystal lattices

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List of bibliographic references

Number of relevant bibliographic references: 63.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000226 (2007)		Surface segregation of Sb atoms during molecular-beam epitaxy of InSb quantum dots in an InAs(Sb) matrix
000233 (2007)		Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templates
000241 (2007)		MBE-grown metamorphic lasers for applications at telecom wavelengths
000246 (2007)		InGaN-based epilayers and quantum wells with intense room-temperature photoluminescence in the 500-650 nm range
000264 (2007)		Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition
000280 (2006)		Surface-plasmon resonances in indium nitride with metal-enriched nano-particles
000362 (2005)		Molecular beam epitaxy of type II InSb/InAs nanostructures with InSb sub-monolayers
000363 (2005)		Molecular beam epitaxy of AlInAsSb alloys near the miscibility gap boundary
000371 (2005)		Hole-hole interaction in a strained InxGa1-xAs two-dimensional system
000372 (2005)		High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system
000450 (2004)		Scanning e-beam pumped resonant periodic gain VCSEL based on an MOVPE-grown GaInP/A1GaInP MQW structure
000454 (2004)		Plasma-assisted MBE growth and characterization of InN on sapphire
000474 (2004)		High nitrogen content InGaAsN/GaAs single quantum well for 1.55 μm applications grown by molecular beam epitaxy
000485 (2004)		Effect of growth kinetics on the structural and optical properties of quantum dot ensembles
000491 (2004)		Correlations between electrical and optical properties for OMVPE InN
000592 (2003)		Vapor growth of Pb1-xInxTe crystals
000637 (2003)		MBE growth and photoluminescence properties of strained InAsSb/AlSbAs quantum wells
000650 (2003)		InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source
000651 (2003)		InGaAsN/GaAs QD and QW structures grown by MOVPE
000653 (2003)		InAs/InGaAsN quantum dots emitting at 1.55 μm grown by molecular beam epitaxy
000664 (2003)		Growth of in-doped PbTe films on Si substrates

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