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Serveur d'exploration sur l'Indium - Analysis (Russie)

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Crystal defect level < Crystal defects < Crystal doping  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 30.
[0-20] [0 - 20][0 - 30][20-29][20-40]
Ident.Authors (with country if any)Title
000282 (2006) Structure of InP single crystals irradiated with reactor neutrons
000338 (2005) Synchrotron X-ray topographic study of dislocations and stacking faults in InAs
000417 (2004-03) Structural and Optical Properties of Heterostructures with InAs Quantum Dots in an InGaAsN Quantum Well Grown by Molecular-Beam Epitaxy
000427 (2004-02) Effect of In and Al Content on Characteristics of Intrinsic Defects in GaAs-Based Quantum Dots
000486 (2004) Effect of crystal defects on the electrical behaviour of InP and sige epitaxial structures
000503 (2003-12) Effect of Electron Irradiation on the Galvanomagnetic Properties of InxBi2 - xTe3 Semiconductor Single Crystals
000716 (2002-09) The Influence of Heat Treatment Conditions on the Evaporation of Defect Regions in Structures with InGaAs Quantum Dots in the GaAs Matrix
000777 (2002-01) A New Class of Holographic Materials Based on Semiconductor CdF2 Crystals with Bistable Centers. Part II. Growth of Optically Perfect Crystals
000A46 (2000-09-20) Molecular Static Model of CuInSe2 Crystal: Energy Properties of Some Structural Defects
000A65 (2000-07) Lattice Dynamics of MF3 Crystals (M = Al, Ga, and In)
000B24 (2000-02) Electrical Properties of InP Irradiated with Fast Neutrons in a Nuclear Reactor
000C11 (2000) 1.3 μm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition
000C53 (1999-09) Optoelectronic images of polycrystalline thin-film solar cells based on CuInSe2 and CuInGaSe2 obtained by laser scanning
000C70 (1999-08) Electrical properties of InSb irradiated with fast neutrons from a nuclear reactor
000D30 (1999-02) High resolution x-ray diffractometry of the structural characteristics of a semiconducting (InGa)As/GaAs superlattice
000F55 (1998) Experimental studies of the initial diffusion stage in semiconductors
000F79 (1997-12) Silicon and phosphorus co-implantation into undoped and indium-doped GaAs substrates
001022 (1997-07) Measurement of the differential and integral distribution of diffuse x-ray scattering intensity from defects in thin strained layers
001048 (1997-03) X-ray diffuse scattering by microdefects in nonstoichiometric InSb single crystals
001058 (1997-02) Defect mobility in GaAs under conditions of NMR saturation by an ac electric field
001065 (1997-01) Cathodoluminescence of p-n-p microstructures in CuInSe2 crystals

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