Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Keywords » - entrée « Charge carriers »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
Charge carrier trapping < Charge carriers < Charge compensation  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 23.
[0-20] [0 - 20][0 - 23][20-22][20-40]
Ident.Authors (with country if any)Title
000089 (2010) Violet-green laser converter based on MBE grown II-VI green lasers with multiple CdSe quantum dot sheets, pumped by InGaN laser diode
000094 (2010) Study of Semiconductor Multilayer Structures by Cathodoluminescence and Electron Probe Microanalysis
000095 (2010) Semiconductor Nanostructures Modified by the UV Laser Radiation
000135 (2009) Structural features, nonstoichiometry and high-temperature transport in SrFe1-xMoxO3-δ
000179 (2009) About deep impurity centers in InAs
000229 (2007) Redox behavior and transport properties of La0.5- 2xCexSr0.5+xFeO3- δ and La0.5+2yFe1- yNbyO3- δ perovskites
000674 (2003) Escape of carriers photoexcited in self-organized InAs/GaAs quantum dots
000778 (2002) lime-resolved studies of InGaN/GaN quantum dots
000801 (2002) Optical nonlinearities in a microcavity with InGaN quantum wells: Self-assembled quantum dots approach
000A11 (2001) Cathodoluminescence of indium phosphide single crystal of n-type conductivity
000A12 (2001) Carrier relaxation dynamics in self-assembled quantum dots studied by artificial control of nonradiative losses
000D57 (1999) Quantization of the free charge carriers on InSb at room temperature
001181 (1996-06) Avalanche multiplication coefficients of carriers in p-n structures
001192 (1996-05) Effect of interface properties and deep levels in the band gap on the capacitance-voltage characteristics of indium arsenide MIS structures
001275 (1995-12) Characteristic features of the temperature dependence of the threshold current density of GaInAsSb double-heterostructure lasers with a thin active region
001280 (1995-11) Determination of the diffusion-recombination parameters of semiconductors by a contact-free method
001297 (1995-08) Metal-insulator electronic phase transition in heavily doped compensated semiconductors
001306 (1995-07) Effect of Ar+ implantation on light scattering by undoped indium phosphide single crystals
001337 (1995-01) Insulator-metal phase transition: thermodynamic aspects of the problem
001351 (1995) SEM evidence for near-surface carrier passivation by hydrogen in CH4/H2 reactive ion etched p-InP
001423 (1994-08) Optical Faraday effect due to spin-density fluctuations of electrons in n-type semiconductors

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Russie/Analysis
HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/KwdEn.i -k "Charge carriers" 
HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/KwdEn.i  \
                -Sk "Charge carriers" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Russie
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Charge carriers
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024