Binary compound < Binary compounds < Binary mixture

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List of bibliographic references

Number of relevant bibliographic references: 294.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000003 (2013)		Towards an Integrated Mode-Locked Microlaser Based on Two-Dimensional Photonic Crystals and Graphene
000047 (2012)		Effects of phonon confinement on high-electric field electron transport in an InGaAs/InAlAs quantum well with an inserted InAs barrier
000055 (2011)		Tin-stabilized (1 x2) and (1 x4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations
000079 (2011)		High-speed single-photon source based on self-organized quantum dots
000089 (2010)		Violet-green laser converter based on MBE grown II-VI green lasers with multiple CdSe quantum dot sheets, pumped by InGaN laser diode
000091 (2010)		Type II heterostructures with InSb quantum dots inserted into p-n InAs(Sb,P) junction
000097 (2010)		Quantum dots for single and entangled photon emitters
000098 (2010)		Pulsed laser ablation of binary semiconductors: mechanisms of vaporisation and cluster formation : PHOTONICS AND NANOTECHNOLOGY
000105 (2010)		Narrow gap III-V materials for infrared photodiodes and thermophotovoltaic cells
000114 (2010)		Influence of ex-situ AFM treatment on epitaxial growth of self-organized InAs quantum dots
000115 (2010)		InGaAsSb LED arrays (λ = 3.7 μm) with Photonic Crystals
000128 (2010)		Applying the joint Wigner time-frequency distribution to characterization of ultra-short optical dissipative solitary pulses in the actively mode-locked semiconductor laser with an external single-mode fiber cavity
000145 (2009)		Midinfrared (λ= 3.6 μm) LEDs and arrays based on InGaAsSb with photonic crystals
000149 (2009)		Intracavity terahertz difference-frequency generation in an InGaAs-quantum-well two-frequency InGaAsP/InP laser
000151 (2009)		InSb quantum dots and quantum rings in a narrow-gap InAsSbP matrix
000157 (2009)		High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm
000173 (2009)		Characterization of the time-frequency parameters inherent in the radiation of semiconductor heterolasers using interferometric technique
000176 (2009)		Attainability of negative differential conductance in tunnel Schottky structures with 2D channels: theory and experiment
000190 (2008)		Quantum dot diode lasers for optical communication systems
000191 (2008)		Photovoltaic detector based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructures with a single quantum well for mid-infrared spectral range
000192 (2008)		Optimisation of waveguide parameters of laser InGaAs/AlGaAs/GaAs heterostructures for obtaining the maximum beam width in the resonator and the maximum output power

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