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Serveur d'exploration sur l'Indium - Analysis (Russie)

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Ballistic transport < Band bending < Band energy diagram  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
000143 (2009) On the nature of defect states at interfaces of InAs/AlSb quantum wells
000267 (2007) Charge accumulation in ultrathin Cs/n-GaN and Cs/n-InGaN interfaces
000273 (2007) Band bending of n-InN epilayers and exact solution of the classical Thomas-Fermi equation
000781 (2002) Type II GaSb based photodiodes operating in spectral range 1.5-4.8 μm at room temperature
000D44 (1999) Ultrahigh vacuum scanning tunnelling microscopy studies of the decapped InAs quantum dots on GaAs(001) surface after desorption of a protective As layer
001230 (1996) Self-consistent calculation of current-voltage characteristics of resonant tunnelling structures with type II heterojunctions
001231 (1996) Sb or Cs covered InAs(110) surfaces : Moving eF into conduction band and quantized 2D electron channel
001522 (1993) Radiation recombination in type-II n-GaInAsSb/N-GaSb heterojunctions
001672 (1992) Influence of sulfiding on the state of the surface and photoelectric properties of InP and GaAs
001691 (1992) Electron state of a surface of InP modified by treatment in sulfur vapor
001755 (1991) Possible derelaxation of p-type InP(110)
001862 (1990) UPS study of the metal-semiconductor interface Ag-A3 B5 (GaAs, InAs, InP, InSb) formation at 10 K

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