Serveur d'exploration sur l'Indium - Analysis (Russie)

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Auger emission < Auger recombination < Austenite  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
000087 (2011) Analytical and numerical studies of p+-emitters in silicon carbide bipolar devices
000195 (2008) Novel materials GaInAsPSb/GaSb and GaInAsPSb/InAs for room-temperature optoelectronic devices for a 3-5 μm wavelength range (GaInAsPSb/GaSb and GaInAsPSb/InAs for 3-5 μm)
000692 (2003) Auger recombination in strained InGaAsP quantum wells with eg = 0.7-1.6 eV
000D90 (1999) High power 4.6 μm light emitting diodes for CO detection
001553 (1993) Long-wavelength low-threshold lasers based on III-V compounds
001633 (1992) Picosecond carrier dynamics and studies of Auger recombination processes in indium arsenide at room temperature
001787 (1991) Investigation of the temperature dependence of the threshold current density of double-heterostructure GaInAsSb lasers
001896 (1990) Original spontaneous electroluminescence generated in GaInAsSb heterojunction light-emitting diodes in the spectral range 1.8-2.4 μm
001B00 (1988)
001B32 (1988)
001E66 (1984)

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