Aluminium compound < Aluminium compounds < Aluminium fluorides

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List of bibliographic references

Number of relevant bibliographic references: 81.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000397 (2004-06-07)		Asymmetric AlAsSb/InAs/CdMgSe quantum wells grown by molecular-beam epitaxy
000402 (2004-06)		Electron-Electron Scattering in Stepped Quantum Wells
000405 (2004-05)		Luminescence of Stepped Quantum Wells in GaAs/GaAlAs and InGaAs/GaAs/GaAlAs Structures
000500 (2003-12)		MOCVD GaInAsP/GaInP/AlGaInP Laser Structures Emitting at 780 nm
000513 (2003-10-13)		Electrically tunable mid-infrared electroluminescence from graded cascade structures
000517 (2003-10)		Electron Transport in Unipolar Heterostructure Transistors with Quantum Dots in Strong Electric Fields
000521 (2003-09)		Metamorphic Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures with High Electron Mobility Grown on GaAs Substrates
000530 (2003-08)		High-Efficiency GaInAsSb/GaAlAsSb Photodiodes for 0.9- to 2.55-μm Spectral Range with a Large-Diameter Active Area
000542 (2003-06-15)		Kinetics of highly spin-polarized electron photoemission from an InGaAlAs strained layer by energy and spin-resolved measurements
000545 (2003-06)		Mid-Infrared (λ = 2.775 μm) Injection Laser Based on AlGaAsSb/InAs/CdMgSe Hybrid Double Heterostructure Grown by Molecular-Beam Epitaxy
000547 (2003-05-26)		A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy
000561 (2003-04)		Current and Temperature Tuning of Quantum-Well Lasers Operating in 2.0- to 2.4-μm Range
000565 (2003-03)		Investigation of the Physical Properties of Semiconductor Nanostructures Using Samples with Laterally Nonuniform Layers: 1. Photoluminescence
000573 (2003-02)		Population Inversion between Γ Subbands in Quantum Wells under the Conditions of Γ-L Intervalley Transfer
000574 (2003-02)		Low-Threshold-Current 1.2-1.5 μm Laser Diodes Based on AlInGaAs/InP Heterostructures
000587 (2003-01-01)		Voltage distributions and nonoptical catastrophic mirror degradation in high power InGaAs/AlGaAs/GaAs lasers studied by Kelvin probe force microscopy
000704 (2002-12)		MBE Growth and Photoluminescent Properties of InAsSb/AlSbAs Quantum Wells
000721 (2002-09)		MOCVD-Grown InGaAs/GaAs/AlGaAs Laser Structures with a Broad-Area Contact
000734 (2002-07)		The Formation of InAs Quantum Dots in an Aluminum Oxide Matrix
000776 (2002-01)		Evaluation of Physical Parameters for the Group III Nitrates: BN, AlN, GaN, and InN
000874 (2001-10)		Difference Mode Generation in Injection Lasers

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