Zh. Bil Kis < Zh. I. Alferov < Zh. L. Dykh

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 92.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000367 (2005)		Long-wavelength lasers based on metamorphic quantum dots
000401 (2004-06)		High-Power 1.5 μm InAs-InGaAs Quantum Dot Lasers on GaAs Substrates
000429 (2004-01-15)		Nitrogen local electronic structure in Ga(In)AsN alloys by soft-x-ray absorption and emission: Implications for optical properties
000501 (2003-12)		Lasing at 1.5 μm in Quantum Dot Structures on GaAs Substrates
000514 (2003-10)		Temperature Characteristics of Low-Threshold High-Efficiency Quantum-Dot Lasers with the Emission Wavelength from 1.25 to 1.29 μm
000524 (2003-08)		Synchrotron Investigations of an Electron Energy Spectrum in III-V-Based Nanostructures
000539 (2003-07)		Control over the Parameters of InAs-GaAs Quantum Dot Arrays in the Stranski-Krastanow Growth Mode
000545 (2003-06)		Mid-Infrared (λ = 2.775 μm) Injection Laser Based on AlGaAsSb/InAs/CdMgSe Hybrid Double Heterostructure Grown by Molecular-Beam Epitaxy
000547 (2003-05-26)		A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy
000636 (2003)		MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates
000654 (2003)		InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain
000713 (2002-10-15)		Quantum dot origin of luminescence in InGaN-GaN structures
000716 (2002-09)		The Influence of Heat Treatment Conditions on the Evaporation of Defect Regions in Structures with InGaAs Quantum Dots in the GaAs Matrix
000759 (2002-03-25)		Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures
000816 (2002)		Long-wavelength quantum-dot lasers
000867 (2001-10-15)		Ultrafast carrier dynamics and dephasing in InAs quantum-dot amplifiers emitting near 1.3-μm-wavelength at room temperature
000894 (2001-07)		Comparative Analysis of Long-Wavelength (1.3 μm) VCSELs on GaAs Substrates
000895 (2001-07)		1.3 μm Vertical Microcavities with InAs/InGaAs Quantum Dots and Devices Based on Them
000946 (2001)		Radiative inter-sublevel transitions in InGaAs/AlGaAs quantum dots
000980 (2001)		Large spectral splitting of TE and TM components of QDs in a microcavity
000983 (2001)		Incorporation of InAs nanostructures in a silicon matrix : growth, structure and optical properties

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List of associated KwdEn.i

Nombre de documents	Descripteur
77	Experimental study
61	Gallium arsenides
55	Indium compounds
43	Photoluminescence
41	III-V semiconductors
38	Semiconductor quantum dots
28	Molecular beam epitaxy
25	Indium arsenides
23	Quantum dots
21	Semiconductor lasers
15	Quantum well lasers
14	Aluminium compounds
13	Ternary compounds
12	TEM
11	Binary compounds
11	Theoretical study
10	Island structure
10	Semiconductor growth
8	Infrared laser
8	Semiconductor heterojunctions
7	Current density
7	Electroluminescence
7	Ground states
7	Interface states
7	Self organization
7	Semiconductor materials
7	Threshold current
6	Excitons
6	Gallium compounds
6	Injection laser
6	Surface emitting lasers
6	Temperature dependence
5	Aluminium arsenides
5	Gallium Indium Arsenides phosphides Mixed
5	Nanostructured materials
5	Semiconductor quantum wells
4	Epitaxy
4	Heterojunction
4	Indium Phosphides
4	Localized states
4	Microcavity
4	Quantum dot
4	Semiconductor laser arrays
4	Transmission electron microscopy
4	Wide band gap semiconductors
3	Binary compound
3	Crystal growth from vapors
3	Double heterojunction
3	Electronic structure
3	Gallium Arsenides
3	Interface structure
3	Laser diodes
3	Microelectronic fabrication
3	Monolayers
3	Optical pumping
3	Semiconductor laser
3	Silicon
3	Vertical cavity laser
3	self-assembly
2	Antimony compounds
2	Arsenic compounds
2	Atomic force microscopy
2	Band structure
2	CVD
2	Cadmium compounds
2	Cathodoluminescence
2	Crystal growth
2	Distributed Bragg reflector lasers
2	Electron-phonon interactions
2	Electronic density of states
2	Energy gap
2	Epitaxial layers
2	Excited states
2	Gain
2	Growth from liquid
2	Heteroepitaxy
2	Heterojunctions
2	II-VI semiconductors
2	III-V compound
2	IV characteristic
2	Integrated circuit
2	Laser cavity resonators
2	Laser mirrors
2	Light emitting devices
2	Light emitting diodes
2	Line widths
2	Nanometer scale
2	Nanostructures
2	Optical properties
2	Optimization
2	Optoelectronic devices
2	Output power
2	Performance evaluation
2	Quantum dot lasers
2	Quantum size effect
2	Quantum well
2	Quantum wires
2	RHEED
2	Refractive index
2	STM

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