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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « Z. N. Sokolova »
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Z. N. Prozorovskaya < Z. N. Sokolova < Z. P. Gad Mashi  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000261 (2007) Double-band generation in InGaAs/GaAs diode laser at high pulsed current pumping
000419 (2004-03) Internal Optical Loss in Semiconductor Lasers
000510 (2003-11) 1.7-1.8 μm Diode Lasers Based on Quantum-Well InGaAsP/InP Heterostructures
000692 (2003) Auger recombination in strained InGaAsP quantum wells with eg = 0.7-1.6 eV
000699 (2003) 14XX nm pump lasers for Raman and Er3+ doped fiber amplifiers
000710 (2002-11) High Power Single-Mode (λ = 1.3-1.6 μm) Laser Diodes Based on Quantum Well InGaAsP/InP Heterostructures
000764 (2002-03) Analysis of Threshold Current Density and Optical Gain in InGaAsP Quantum Well Lasers
000866 (2001-11) MOCVD-Grown Broad Area InGaAs/GaAs/InGaP Laser Diodes
000923 (2001-02) Optical Study of InP Quantum Dots
000A31 (2000-12) On the Internal Quantum Efficiency and Carrier Ejection in InGaAsP/InP-based Quantum-Well Lasers
000C54 (1999-09) InGaAs/InP heterostructures with strained quantum wells and quantum dots (λ=1.5-1.9 μm)
000C74 (1999-07) Self-organized nanoscale InP islands in an InGaP/GaAs host and InAs islands in an InGaAs/InP host
000E53 (1998-07-01) Optical loss in InAs-based long-wavelength lasers
000F86 (1997-11) Influence of valence band absorption on the threshold characteristics of long-wavelength InAs lasers
001816 (1991) Experimental and theoretical investigations of singularities of the thresholdand power characteristics of InGaAsP/InP separate-confinement double-heterostructure lasers (λ = 1.3 μm)
001B31 (1988)

List of associated KwdEn.i

Nombre de
documents		Descripteur
11Indium compounds
10Experimental study
9Gallium arsenides
8Semiconductor lasers
6Phosphorus compounds
6Theoretical study
5III-V semiconductors
5Semiconductor heterojunctions
4Photoluminescence
3Diodes
3Optical losses
3Quantum well lasers
3Semiconductor quantum wells
2Binary compounds
2Electroluminescence
2Gallium Arsenides
2Gallium Indium Arsenides phosphides Mixed
2Indium phosphides
2Laser diodes
2Quaternary compounds
2Semiconductor laser
2Semiconductor quantum dots
2Threshold
2VPE
2Valence bands
1Auger effect
1Auger recombination
1Current density
1Defect absorption spectra
1Double heterojunction
1Emission spectra
1Gain measurement
1Gallium Arsenides phosphides
1Gallium phosphides
1Heterojunction
1Heterostructures
1IV characteristic
1Indium Arsenides
1Indium Arsenides phosphides
1Indium Phosphides
1Indium arsenides
1Infrared sources
1Injection laser
1Interface states
1Island structure
1MOCVD
1Optical waveguides
1Optimization
1Power
1Quantum size effect
1SCH laser
1Semiconductor epitaxial layers
1Semiconductor materials
1Single mode laser
1Spin-orbit interactions
1Spontaneous emission
1Stimulated emission
1Strained quantum well
1Visible spectra
1Waveguides
1ns range
1self-organised criticality

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