Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « Z. I. Alferov »
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List of bibliographic references

Number of relevant bibliographic references: 27.
[0-20] [0 - 20][0 - 27][20-26][20-40]
Ident.Authors (with country if any)Title
000824 (2002) InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with high (88%) differential efficiency
000B81 (2000) Improved catastrophic optical mirror damage level in InGaAs/AlGaAs laser diodes
000B87 (2000) Gaas-based 1.3 μm InGaAs quantum dot lasers : A status report : Special issue papers
000C10 (2000) 3.5 W continuous wave operation from quantum dot laser
000C11 (2000) 1.3 μm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition
000D89 (1999) High power CW operation of InGaAsN lasers at 1.3 μm
000E07 (1999) Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate
000E15 (1999) 3.9 W CW power from sub-monolayer quantum dot diode laser
000E16 (1999) 3.5W CW operation of quantum dot laser
000E18 (1999) 1.75 μm emission from self-organized InAs quantum dots on GaAs
000F52 (1998) Formation of InAs quantum dots on a silicon (100) surface
001068 (1997) Vertically coupled quantum dot lasers: First device oriented structures with high internal quantum efficiency
001102 (1997) Negative characteristic temperature of InGaAs quantum dot injection laser
001114 (1997) InGaAs/GaAs quantum dot lasers with ultrahigh characteristic temperature (T0 = 385 K) grown by metal organic chemical vapour deposition
001116 (1997) Growth and characterization of coherent quantum dots grown by single- and multi-cycle metal-organic chemical vapour deposition
001139 (1996-11-11) Structural and optical properties of InAs-GaAs quantum dots subjected to high temperature annealing
001146 (1996-10) Photoluminescence of arrays of vertically coupled, stressed InAs quantum dots in a GaAs (100) matrix
001150 (1996-10) Identification of radiative recombination channels in quantum dot structures
001153 (1996-09-15) Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth
001158 (1996-09) Formation of vertically aligned arrays of strained InAs quantum dots in a GaAs(100) matrix
001161 (1996-08) Optical emission range of structures with strained InAs quantum dots in GaAs

List of associated KwdEn.i

Nombre de
documents
Descripteur
18Experimental study
15Indium arsenides
14Gallium arsenides
11Quantum dots
11Semiconductor lasers
10Photoluminescence
7Binary compounds
7Threshold current
6Current density
6Ternary compounds
5Continuous wave lasers
4Molecular beam epitaxy
4Semiconductor materials
4Semiconductor quantum dots
3Aluminium arsenides
3Electroluminescence
3Experiments
3Semiconducting indium compounds
3Semiconducting indium gallium arsenide
3Temperature dependence
3Theory
2Crystal growth from vapors
2Excitons
2Heterojunctions
2High power lasers
2Injection laser
2Laser diodes
2MOCVD
2Optical waveguides
2Quantum well lasers
2Semiconducting gallium arsenide
2Substrates
2Theoretical study
1Annealing
1CVD
1CW lasers
1Calculation methods
1Catastrophic optical mirror damage (COMD)
1Characterization
1Cladding (coating)
1Coatings
1Conversion efficiency
1Critical size
1Crystal defects
1Crystal growth
1Current voltage characteristics
1Electron-phonon coupling
1Electronic structure
1Energy-level transitions
1Epitaxial growth
1Fabrication
1Flux density
1Gain
1Gain control
1Graded-index waveguides
1Ground states
1Heteroepitaxy
1Heterostructures
1III-V semiconductors
1Indium arsenide
1Infrared laser
1Injection
1Laser mirrors
1Laser pulses
1Limitation
1Mechanism
1Mirrors
1Monolayers
1Multilayers
1Operation
1Optical gain
1Optical phonons
1Optical power density
1Optical resolving power
1Optimization
1Output power
1Piezoelectricity
1Plasma sources
1Quantum dot (QD) lasers
1Quantum dot laser
1Quantum dot lasers
1Quantum efficiency
1Relaxation
1Resonance
1Scattering
1Self-assembled layers
1Semiconducting aluminum compounds
1Semiconducting films
1Semiconductor device manufacture
1Semiconductor growth
1Semiconductor superlattices
1Strains
1Sub-monolayer quantum dot diode lasers
1Surface emitting lasers
1TEM
1Temperature effects
1Thermal effects
1Thickness
1Threshold current density
1Vertical cavity laser

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