Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « Yu. V. Fedorov »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
Yu. V. Dubrovskii < Yu. V. Fedorov < Yu. V. Funtikov  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.
Ident.Authors (with country if any)Title
000517 (2003-10) Electron Transport in Unipolar Heterostructure Transistors with Quantum Dots in Strong Electric Fields
000589 (2003-01) Lateral Electronic Transport in Short-Period InAs/GaAs Superlattices at the Threshold of Quantum Dot Formation
000655 (2003) InAs quantum dots in multilayer GaAs-based heterostructures
000B16 (2000-02) Ultraquasi-Hydrodynamic Electron Transport in Submicrometer Field Effect MIS Transistors and Heterotransistors
000C55 (1999-09) High density 2DEG in III-V semiconductor heterostructures and high-electron-mobility transistors based on them
000E32 (1998-10) High-electron-mobility field-effect transistors based on metamorphic InAlAs/InGaAs/InAlAs structures grown on GaAs substrates
000E39 (1998-09) Transport properties and photoluminescence of two-dimensional electron gas in pseudomorphic n-AlGaAs/InGaAs/GaAs quantum wells
000E43 (1998-09) Photoluminescence of two-dimensional electron gas in metamorphic n-InAlAs/InGaAs/InAlAs heterostructures on GaAs(100) substrates
000F39 (1998) LM-HEMT and P-HEMT-technology for ultra high frequency devices
001421 (1994-08) Study of an InGaAs/GaAs(100) heterostructure by high-resolution x-ray diffractometry

List of associated KwdEn.i

Nombre de
documents
Descripteur
8Experimental study
7Indium compounds
6Gallium arsenides
5Aluminium compounds
5Theoretical study
4Molecular beam epitaxy
4Photoluminescence
3Arsenic compounds
3Gallium compounds
2Electrical conductivity
2Electron gas
2Field effect transistors
2Hall effect
2Heterostructures
2III-V semiconductors
2Indium arsenides
2Semiconductor heterojunctions
2Semiconductor quantum dots
2Transport processes
2XRD
1Aluminium Arsenides
1Atomic force microscopy
1Binary compound
1Binary compounds
1Electric field effects
1Electron mobility
1Formation mechanism
1Gallium Arsenides
1High electron mobility transistor
1High electron mobility transistors
1High-resolution methods
1Hydrodynamics
1Indium Arsenides
1Interface structure
1MIS structures
1Multilayers
1Ordering
1Performance characteristic
1Quantum dots
1Semiconductor epitaxial layers
1Semiconductor quantum wells
1Semiconductor superlattices
1Shubnikov-de Haas effect
1Ternary compound
1Ternary compounds
1Thin films
1Two-dimensional electron gas
1Unijunction transistors
1Wetting

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Russie/Analysis
HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/Author.i -k "Yu. V. Fedorov" 
HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/Author.i  \
                -Sk "Yu. V. Fedorov" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Russie
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    Yu. V. Fedorov
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024