Yu. P. Svirko < Yu. P. Yakovlev < Yu. P. Yashin

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 84.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000091 (2010)		Type II heterostructures with InSb quantum dots inserted into p-n InAs(Sb,P) junction
000105 (2010)		Narrow gap III-V materials for infrared photodiodes and thermophotovoltaic cells
000151 (2009)		InSb quantum dots and quantum rings in a narrow-gap InAsSbP matrix
000183 (2008)		Type II GaAsxSb1-x/InAs (x<0.35) heterojunction grown by MOVPE near a miscibility gap of the ternary solid solution
000191 (2008)		Photovoltaic detector based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructures with a single quantum well for mid-infrared spectral range
000404 (2004-05)		MOCVD Growth and Mg-Doping of InAs Layers
000518 (2003-10)		Electroluminescence in a Semimetal Channel at a Single Type II Broken-Gap Heterointerface
000525 (2003-08)		Special Features of Spontaneous and Coherent Emission of IR Lasers Based on a Single Type-II Broken-Gap Heterojunction
000529 (2003-08)		Interaction of Charge Carriers with the Localized Magnetic Moments of Manganese Atoms in p-GaInAsSb/p-InAs:Mn Heterostructures
000530 (2003-08)		High-Efficiency GaInAsSb/GaAlAsSb Photodiodes for 0.9- to 2.55-μm Spectral Range with a Large-Diameter Active Area
000532 (2003-08)		Characterization of Light-Emitting Diodes Based on InAsSbP/InAsSb Structures Grown by Metal-Organic Vapor-Phase Epitaxy
000545 (2003-06)		Mid-Infrared (λ = 2.775 μm) Injection Laser Based on AlGaAsSb/InAs/CdMgSe Hybrid Double Heterostructure Grown by Molecular-Beam Epitaxy
000547 (2003-05-26)		A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy
000561 (2003-04)		Current and Temperature Tuning of Quantum-Well Lasers Operating in 2.0- to 2.4-μm Range
000594 (2003)		Two-dimensional semimetal channel in a type II broken-gap GaInAsSb/InAs single heterojunction
000618 (2003)		Powerful InAsSbP/InAsSb light emitting diodes grown by MOVPE
000633 (2003)		Magnetotransport of 2D-electrons and holes at a type II broken-gap single heterojunction doped with acceptor impurity
000644 (2003)		Interface luminescence and lasing at a type II single broken-gap heterojunction
000711 (2002-11)		Flattening of Dynamic Dielectric Phase Grating and Single-Mode Lasing under the Conditions of Transverse Oscillations of Luminous Flux
000731 (2002-08)		Influence of Tellurium Impurity on the Properties of Ga1 - XInXAsYSb1 - Y (X > 0.22) Solid Solutions
000745 (2002-05)		Spectral Line Width of the Current-Tunable Lasers on the Base of InAsSb/InAsSbP at Low Temperature

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List of associated KwdEn.i

Nombre de documents	Descripteur
72	Experimental study
55	Indium compounds
30	III-V semiconductors
29	Gallium arsenides
29	Semiconductor heterojunctions
29	Semiconductor lasers
25	Antimony compounds
20	LPE
18	Electroluminescence
17	Arsenic compounds
14	Indium arsenides
12	Gallium compounds
12	Laser tuning
12	Solid solutions
11	Heterojunctions
10	Indium antimonides
10	Photoluminescence
9	Aluminium compounds
9	Magnetoresistance
8	Binary compounds
8	Carrier density
8	Heterostructures
8	Quaternary compounds
8	Semiconductor materials
7	Indium Arsenides
7	Theoretical study
6	Doping
6	Epitaxial layers
6	Gallium antimonides
6	Hall effect
6	Light emitting diodes
6	Phosphorus compounds
6	VPE
5	Band structure
5	Energy gap
5	Gallium Antimonides
5	Heterojunction
5	Impurity states
5	Inorganic compound
5	Narrow band gap semiconductors
5	Photoconductivity
5	Photodiodes
5	Semiconductor epitaxial layers
5	Semiconductor growth
5	Temperature
5	p n junctions
4	Acceptor center
4	Electrical conductivity
4	Electron-hole recombination
4	Gallium Antimonides arsenides
4	Gallium Indium Antimonides arsenides Mixed
4	Laser modes
4	MOVPE method
4	Molecular beam epitaxy
4	Shubnikov-de Haas effect
3	Cadmium compounds
3	Carrier mobility
3	Conduction bands
3	Defect states
3	Electric currents
3	Electron mobility
3	Impurities
3	Impurity density
3	Indium Antimonides arsenides
3	Indium phosphides
3	Interface phenomena
3	Localized states
3	Low temperature
3	Quantum wells
3	Quantum yield
3	Radiative recombination
3	Semiconductor doping
3	Tellurium additions
2	Ambient temperature
2	Auger effect
2	CVD
2	Carrier relaxation time
2	Charge carrier recombination
2	Composition effect
2	Current density
2	Detectivity
2	Diodes
2	Double heterojunction
2	II-VI semiconductors
2	IV characteristic
2	Infrared detectors
2	Infrared laser
2	Infrared radiation
2	Infrared spectra
2	Injection laser
2	Instrumentation
2	Interface states
2	Light emitting diode
2	Line widths
2	Magnesium compounds
2	Magnetic field effects
2	Nonlinear optics
2	Optical materials
2	Optical properties
2	Quantum dots

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