Yu. M. Sherniakov < Yu. M. Shernyakov < Yu. M. Smirnov

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 33.
[0-20] [0 - 20][0 - 33][20-32][20-40]

Ident.	Authors (with country if any)	Title
000219 (2008)		A 1.33 μm InAs/GaAs quantum dot laser with a 46 cm-1 modal gain
000223 (2007)		The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots
000241 (2007)		MBE-grown metamorphic lasers for applications at telecom wavelengths
000348 (2005)		QD lasers : Physics and applications
000372 (2005)		High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system
000401 (2004-06)		High-Power 1.5 μm InAs-InGaAs Quantum Dot Lasers on GaAs Substrates
000406 (2004-05)		Low-Threshold 1.3-μm Injection Lasers Based on Single InGaAsN Quantum Wells
000501 (2003-12)		Lasing at 1.5 μm in Quantum Dot Structures on GaAs Substrates
000514 (2003-10)		Temperature Characteristics of Low-Threshold High-Efficiency Quantum-Dot Lasers with the Emission Wavelength from 1.25 to 1.29 μm
000553 (2003-05)		Longwave Generation in Laser Structures Based on InGaAs(N) Quantum Wells on GaAs Substrates
000611 (2003)		Recent advances in long wavelength GaAs-based quantum dot lasers
000636 (2003)		MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates
000654 (2003)		InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain
000662 (2003)		High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells
000708 (2002-11-11)		Spectrotemporal response of 1.3 μm quantum-dot lasers
000991 (2001)		Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation
000A18 (2001)		1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy
000A21 (2000-12-15)		Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors
000A26 (2000-12-01)		Volmer-Weber and Stranski-Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm
000A84 (2000-05)		Stacked InAs/InGaAs Quantum Dot Heterostructures for Optical Sources Emitting in the 1.3 μm Wavelength Range
000A85 (2000-05)		Power Conversion Efficiency of Quantum Dot Laser Diodes

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List of associated KwdEn.i

Nombre de documents	Descripteur
30	Gallium arsenides
27	Experimental study
19	Indium compounds
14	III-V semiconductors
14	Semiconductor quantum dots
13	Semiconductor lasers
11	Indium arsenides
11	Quantum dots
10	Quantum well lasers
9	Molecular beam epitaxy
9	Photoluminescence
8	Current density
7	Binary compounds
7	Threshold current
6	Ternary compounds
5	Aluminium compounds
5	Ground states
5	Infrared laser
5	Laser diodes
5	Vertical cavity laser
4	Electroluminescence
4	Output power
4	Semiconductor laser arrays
4	Surface emitting lasers
4	TEM
4	Theoretical study
3	Continuous wave
3	Self organization
3	Temperature
3	Temperature dependence
2	Aluminium arsenides
2	Buffer layer
2	Crystal growth from vapors
2	Excited states
2	IV characteristic
2	Injection laser
2	Interface states
2	Nanostructured materials
2	Quantum dot
2	Quantum dot lasers
2	Quantum yield
2	Semiconductor heterojunctions
2	Spontaneous emission
2	Temperature effects
2	quantum dot lasers
2	self-assembly
1	Aluminium compound
1	Ambient temperature
1	Arsenic compound
1	Arsenic compounds
1	Binary compound
1	Bragg reflection
1	CW lasers
1	Cooling system
1	Critical current density
1	Crystal microstructure
1	Crystal morphology
1	Damage
1	Damaging
1	Defect density
1	Digital simulation
1	Distributed Bragg reflector lasers
1	Doped materials
1	Durability
1	Electron hole pair
1	Experimental result
1	Far field
1	Far infrared radiation
1	Filamentation
1	Frequency control
1	Gain
1	Gallium Arsenides
1	Gallium compound
1	Gallium compounds
1	Germanium
1	Growth mechanism
1	Growth rate
1	Heat sink
1	Heterostructures
1	High-power lasers
1	High-speed integrated circuits
1	High-speed optical techniques
1	III-V compound
1	Indium Arsenides
1	Indium compound
1	Indium phosphides
1	Inorganic compounds
1	Interface structure
1	Intraband transition
1	Irreversible processes
1	Laser cavity resonators
1	Laser mirrors
1	Laser transitions
1	Light emitting devices
1	Luminous intensity current characteristic
1	Measuring methods
1	Microcavity
1	Monolayers
1	Narrow band gap semiconductors
1	Near infrared radiation

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