Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « Yu. G. Musikhin »
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List of bibliographic references

Number of relevant bibliographic references: 43.
[0-20] [0 - 20][0 - 43][20-40]
Ident.Authors (with country if any)Title
000275 (2007) Analysis of the local indium composition in ultrathin InGaN layers
000312 (2006) Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence
000326 (2006) Comparative study of GaAs-based 1.5 micron-range InAs/InGaAs and InAs/InAlAs self-assembled quantum dots
000331 (2006) 1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance
000349 (2005) Properties of InGaAsN heterostructures emitting at 1.3-1.55 μm
000401 (2004-06) High-Power 1.5 μm InAs-InGaAs Quantum Dot Lasers on GaAs Substrates
000421 (2004-03) Dependence of Structural and Optical Properties of QD Arrays in an InAs/GaAs System on Surface Temperature and Growth Rate
000485 (2004) Effect of growth kinetics on the structural and optical properties of quantum dot ensembles
000521 (2003-09) Metamorphic Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures with High Electron Mobility Grown on GaAs Substrates
000539 (2003-07) Control over the Parameters of InAs-GaAs Quantum Dot Arrays in the Stranski-Krastanow Growth Mode
000551 (2003-05) Structural and Optical Properties of InAs Quantum Dots in AlGaAs Matrix
000674 (2003) Escape of carriers photoexcited in self-organized InAs/GaAs quantum dots
000713 (2002-10-15) Quantum dot origin of luminescence in InGaN-GaN structures
000719 (2002-09) Stark Effect in Vertically Coupled Quantum Dots in InAs-GaAs Heterostructures
000759 (2002-03-25) Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures
000766 (2002-02-15) Photocurrent and capacitance spectroscopy of Schottky barrier structures incorporating InAs/GaAs quantum dots
000778 (2002) lime-resolved studies of InGaN/GaN quantum dots
000816 (2002) Long-wavelength quantum-dot lasers
000890 (2001-08) Anisotropy of the Spatial Distribution of In(Ga)As Quantum Dots in In(Ga)As-GaAs Multilayer Heterostructures Studied by X-ray and Synchrotron Diffraction and Transmission Electron Microscopy
000955 (2001) Photoluminescence emission (1.3-1.4 μm) from quantum dots heterostructures based on GaAs
000A18 (2001) 1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy

List of associated KwdEn.i

Nombre de
documents
Descripteur
37Experimental study
33Gallium arsenides
26Indium compounds
26Photoluminescence
20III-V semiconductors
19Semiconductor quantum dots
13Molecular beam epitaxy
12Indium arsenides
9Quantum dots
7Binary compounds
7TEM
7Theoretical study
7Transmission electron microscopy
6Semiconductor epitaxial layers
6Semiconductor growth
6Semiconductor materials
6Ternary compounds
5Gallium compounds
5Island structure
5Semiconductor lasers
4Aluminium compounds
4Nanostructured materials
4Quantum well lasers
3Annealing
3Electroluminescence
3Gallium nitrides
3Ground states
3Indium nitrides
3Infrared laser
3Interface states
3Optical properties
3Output power
3Semiconductor heterojunctions
3XRD
2Aluminium arsenides
2Arrays
2Arsenic compounds
2Capacitance
2Charge carriers
2Chemical composition
2Crystal growth from vapors
2DLTS
2Energy-level transitions
2Epitaxial layers
2Excited states
2Heterostructures
2High temperature
2IV characteristic
2Indium
2Infrared spectra
2Laser diodes
2Multilayers
2Photoconductivity
2Quantum dot lasers
2Schottky barriers
2Self organization
2Self-assembly
2Semiconductor doping
2Semiconductor quantum wells
2Size effect
2Superlattices
2Surface emitting lasers
2Temperature
2Temperature dependence
2Vertical cavity laser
2Wide band gap semiconductors
1Aggregate
1Aging
1Aluminium nitrides
1Aluminium phosphides
1Ambient temperature
1Atomic force microscopy
1Beam profiles
1CVD
1Chemical interdiffusion
1Confinement
1Convection
1Crystal growth
1Crystal microstructure
1Crystal perfection
1Crystal structure
1Current density
1Decomposition
1Deep energy levels
1Density
1Diffusion
1Distributed Bragg reflector lasers
1Electron density
1Electron mobility
1Electron-hole recombination
1Electronic structure
1Energy gap
1Epitaxy
1Excitation spectrum
1Excitons
1Far field
1Filamentation
1Free carrier
1Gallium Indium Arsenides phosphides Mixed
1Gallium Indium Phosphides Mixed

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