Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « Yu. B. Bolkhovityanov »
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Yu. A. Zarif Yants < Yu. B. Bolkhovityanov < Yu. B. Kudasov  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 14.
Ident.Authors (with country if any)Title
000650 (2003) InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source
000880 (2001-09) Epitaxial Growth, Electronic Properties, and Photocathode Applications of Strained Pseudomorphic InGaAsP/GaAs Layers
001009 (1997-08-01) Shifts and splitting of energy bands in elastically strained InGaP/GaAs(111)B epitaxial films
001229 (1996) Shear deformation potential of elastically strained InGaP/GaAs(111)B and InGaAsP/GaAs(111)B films
001242 (1996) Liquid phase epitaxy of highly strained InGaAsP/GaAs films in the 1.4-1.8 eV interval of band gaps
001282 (1995-10-23) InGaAsP/GaAs elastically strained quaternary solid solutions with high critical thicknesses grown by liquid phase epitaxy
001369 (1995) Liquid phase epitaxial growth of elastically strained InGaAsP layers for spin-polarized electron sources
001370 (1995) Liquid phase epitaxial growth of elastically strained InxGa1-xP and InxGa1-xAsyP1-y solid solutions on GaAs substrates
001385 (1995) Elastically strained InGaAsP films grown by LPE and conception of stress-induced supercooling
001947 (1989) The transition layers in AlGaAs/GaAs and InGaAsP/GaAs heterostructures grown by LPE
001A28 (1989)
001A29 (1989)
001A56 (1988) Relaxation kinetics of a non-equilibrium interface of a multicomponent liquid phase-binary substrate on the example of In-Ga-As/InAs system
001C95 (1986) The initial stages of heteroepitaxy from the liquid phase at a low misfit: InGaAsP on GaAs

List of associated KwdEn.i

Nombre de
documents
Descripteur
13Experimental study
9Gallium arsenides
8Crystal growth
8Semiconductor materials
6Epitaxy
6Indium phosphides
6Quaternary compounds
5Gallium phosphides
5Inorganic compound
5LPE
4Elastic deformation
4Epitaxial layers
4Indium arsenides
4Mismatch lattice
4Thin films
3Thin film
2Arsenides phosphides
2Binary compounds
2Crystal orientation
2Electronic structure
2Gallium Arsenides
2III-V semiconductors
2Indium Arsenides
2Indium compounds
2Liquid solid interface
2Pseudomorphic growth
2Strained layer
2Stresses
2Ternary compounds
2Thickness
2Transition layer
1Absorption coefficients
1Aluminium Arsenides
1Aluminium Gallium Arsenides Mixed
1Aluminium Gallium Indium Phosphides Mixed
1Anodization
1Auger electron spectrometry
1Concentration distribution
1Criticality
1Crystal growth from vapors
1Deformation potential
1Diffusion coefficient
1Elasticity
1Electron spin polarization
1Energy gap
1Film growth
1Free energy
1Gallium Antimonides
1Gallium Arsenides phosphides
1Gallium Indium Antimonides arsenides
1Gallium Indium Arsenides Mixed
1Gallium Indium Arsenides phosphides Mixed
1Gallium compounds
1Growth from liquid
1Growth from melt
1Heteroepitaxy
1Heterojunction
1Heterojunctions
1III-V compound
1Indium Arsenides phosphides
1Indium Gallium Arsenides phosphides
1Inorganic compounds
1Interface
1Interface states
1Inverse crystal growth
1Kinetics
1Liquid phase
1Microphotography
1Molecular beam epitaxy
1Morphology
1Multilayers
1Operating mode
1Optical microscopy
1Photocathodes
1Photoelectron spectroscopy
1Piezo-optical effects
1Process control
1Relaxation
1Semiconductor epitaxial layers
1Semiconductor growth
1Semiconductor heterojunctions
1Semiconductor thin films
1Solid solution
1Solid solutions
1Solid source molecular beam epitaxy
1Step
1Strains
1Supercooling
1Superlattices
1Support
1Transmission electron microscopy
1Valence bands
1XRD

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