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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « Ya. V. Terent Ev »
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Ya. V. Terent < Ya. V. Terent Ev < Ya. V. Terentev  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
000362 (2005) Molecular beam epitaxy of type II InSb/InAs nanostructures with InSb sub-monolayers
000363 (2005) Molecular beam epitaxy of AlInAsSb alloys near the miscibility gap boundary
000472 (2004) InAs/Zn(Mn)Te/Cd(Mn)Se pseudomorphic quantum well structures for spintronic applications
000637 (2003) MBE growth and photoluminescence properties of strained InAsSb/AlSbAs quantum wells
001281 (1995-10-25) Quasithreshold character of the far-infrared absorption in GaSb/InAs/GaSb quantum wells
001312 (1995-06) Measurement of the energy of interface donor centers in a GaSb/InAs/GaSb quantum well
001831 (1991) Drag photocurrent in a 2D electron gas near the cyclotron resonance and its first subharmonic
001967 (1989) Interference resonance photocurrent in n-InSb
001A27 (1989)
001B38 (1988)
001E78 (1984)

List of associated KwdEn.i

Nombre de
documents		Descripteur
9Experimental study
4Indium Antimonides
4Indium arsenides
4Inorganic compound
4Photoconductivity
4Photoluminescence
4Semiconductor materials
3Crystal growth from vapors
3III-V semiconductors
3Magnetic field
3Molecular beam epitaxy
3Quantum wells
3Resonance
3Theoretical study
2Cyclotron resonance
2Gallium antimonides
2Heterostructures
2Indium antimonides
2Interference
2Magnetic field effects
2N type conductivity
2Transmission electron microscopy
2XRD
1Absorption spectra
1Aluminium Antimonides arsenides
1Aluminium antimonides
1Arsenic Antimonides
1Band structure
1Binary compounds
1Cadmium selenides
1Compressive stress
1Donors
1Electroluminescence
1Electromagnetic wave
1Electron gas
1Electron mobility
1Electronic structure
1Energy-level splitting
1Epitaxial layers
1External fields
1Fermi level
1Gallium Antimonides
1Hot carrier
1Impact ionization
1Impurities
1Indium Antimonides arsenides
1Indium Arsenides
1Infrared radiation
1Infrared spectra
1Instability
1Interface states
1Irradiation
1Landau level
1Manganese additions
1Matrix element
1Miscibility
1Morphology
1Nanostructured materials
1Population inversion
1Quantum dots
1Quantum magnetic field
1Quantum well
1Quaternary compounds
1RHEED
1Scanning electron microscopy
1Semiconductor laser
1Semimagnetic semiconductors
1Solid solutions
1Spinodal decomposition
1Spintronics
1Stacking sequence
1Strained quantum well
1Subharmonic
1Surface preparation
1Temperature dependence
1Tunable laser
1Two dimensional model
1Valence bands
1Very low temperature
1Zeeman effect
1Zinc tellurides

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