Y. P. Yakolev < Y. P. Yakovlev < Y. P. Yashin

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 22.
[0-20] [0 - 20][0 - 22][20-21][20-40]

Ident.	Authors (with country if any)	Title
000451 (2004)		Room-temperature photoluminescence of Ga0.96In0.04 As0.11Sb0.89 lattice matched to InAs
000652 (2003)		InAsSb/InAsSbP current-tunable laser with narrow spectral line width
000781 (2002)		Type II GaSb based photodiodes operating in spectral range 1.5-4.8 μm at room temperature
000791 (2002)		Single mode laser based on InAsSb/InAsSbP double heterostructure with tuning from 3.224 to 3.234 μm
000829 (2002)		High-power mid-infrared light emitting diodes grown by MOVPE
000D92 (1999)		Growth of Ga1-xInxAsySb1-y solid solutions from the five-component Ga-In-As-Sb-Pb melt by liquid phase epitaxy
001159 (1996-08)		Using current to tune the wavelength of InAsSb/InAsSbP double-heterostructure lasers
001162 (1996-08)		Noncooled InAsSbP/InAs photodiodes for the spectral range 3-5 μm
001171 (1996-07)		Maximum working temperature of InAsSb/InAsSbP diode lasers
001172 (1996-07)		Lasing inhomogeneities in buried channel lasers with a p-GaInAsSb active region
001178 (1996-06)		High carrier mobility in p-type GaInAsSb/p-InAs heterostructures
001200 (1996-03)		Tunnel-injection laser based on a single p-GaInAsSb/p-InAs type-II broken-gap heterojunction
001275 (1995-12)		Characteristic features of the temperature dependence of the threshold current density of GaInAsSb double-heterostructure lasers with a thin active region
001647 (1992)		Nature of the long-wavelength shift of the spectrum of coherent radiation emitted from GalnAsSb heterolasers
001773 (1991)		Melt-solid phase equilibria in the Pb-GaAs-GaSb system
001787 (1991)		Investigation of the temperature dependence of the threshold current density of double-heterostructure GaInAsSb lasers
001824 (1991)		Electron confinement due to reflection from the interface in heterojunctions
001825 (1991)		Electrical and photoelectric properties of narrow-gap GaInSbAs:Mn solid solutions
001826 (1991)		Electrical and photoelectric properties of InAsSbP solid solutions
001848 (1991)		Behavior of impurities of p-type GaInSbAs solid solutions
001850 (1991)		Avalanche multiplication and ionization coefficients of GalnAsSb

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List of associated KwdEn.i

Nombre de documents	Descripteur
15	Experimental study
8	Indium antimonides
8	Semiconductor materials
7	Indium arsenides
6	Gallium Indium Antimonides arsenides Mixed
6	Gallium antimonides
5	Gallium arsenides
5	Inorganic compound
5	Semiconductor lasers
5	Solid solutions
5	Temperature
4	Energy gap
4	Hall effect
4	Heterojunctions
4	Temperature dependence
4	Theoretical study
3	Charge carrier concentration
3	Charge carrier mobility
3	Chemical composition
3	Current density
3	Experiments
3	Heterojunction
3	Impurity density
3	Low temperature
3	Photoconductivity
3	Photoluminescence
3	Quaternary compounds
3	Semiconducting indium compounds
3	Semiconductor growth
3	Solid solution
3	Theory
3	Threshold current
2	Acceptor center
2	Doping
2	Electric currents
2	Electrical conductivity
2	Hole concentration
2	Impurity
2	Indium phosphides
2	LPE
2	Laser radiation
2	Liquid phase epitaxy
2	Radiative recombination
2	Recombination
2	Semiconductor device manufacture
2	Substrates
2	Tellurium
2	Zinc
1	Absorption spectra
1	Acceptor donor pair
1	Activation energy
1	Antimonides arsenides
1	Antimony Arsenic Gallium Indium Compounds
1	Antimony Indium Arsenides phosphides
1	Antisite defects
1	Application
1	Arsenic Antimonides
1	Auger recombination
1	Band bending
1	Band energy diagram
1	Band splitting
1	Barrier heights
1	Boundary condition
1	Cadmium
1	Capacitance voltage characteristics
1	Carrier concentration
1	Carrier density
1	Carrier mobility
1	Carrier separation
1	Charge carrier
1	Charge carrier recombination
1	Charge carriers
1	Closed cycle helium cryostat
1	Confinement
1	Cross sectional transmission electron microscopy
1	Cryostats
1	Crystal growth
1	Donor center
1	Electric conductivity
1	Electric field
1	Electroluminescence
1	Electronic avalanche
1	Emission spectrum
1	Epitaxial layers
1	Exciton
1	Fabrication
1	Fabry Perot Cavity length
1	Gallium Lead Antimonides arsenides Mixed
1	Germanium
1	Growth from liquid
1	High temperature
1	Impurity level
1	Indium Antimonides arsenides phosphides
1	Indium Arsenides
1	Interband transitions
1	Interface electron state
1	Interfaces (materials)
1	Ionization coefficient
1	Joule heating
1	Laser

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