Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « V. V. Tret Yakov »
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V. V. Travnikov < V. V. Tret Yakov < V. V. Tretinik  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 6.
Ident.Authors (with country if any)Title
000F46 (1998) Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux
001069 (1997) Two-dimensional precipitation of As clusters due to indium delta-doping of GaAs films grown by molecular beam epitaxy at low temperature
001187 (1996-05) Molecular beam epitaxy growth kinetics for group III nitrides
001309 (1995-07) Auger electron spectroscopy, x-ray diffraction, and scanning electron microscopy of InN, GaN, and Ga(AsN) films on GaP and GaAs(001) substrates
001568 (1993) Gallium arsenide grown by molecular beam epitaxy at low temperatures: crystal structure, properties, superconductivity
001569 (1993) Feasibility of formation of In0.52Al0.48As films isoperiodic with the InP substrates by liquid phase epitaxy at low (∼650°C)

List of associated KwdEn.i

Nombre de
documents
Descripteur
6Experimental study
5Molecular beam epitaxy
3Gallium arsenides
3Semiconductor materials
2Gallium nitrides
2Microstructure
2Substrates
2Thin films
1AES
1Absorption spectra
1Aggregation
1Aluminium arsenides
1Annealing
1Antisite defect
1Arsenides
1Atomic clusters
1Beryllium additions
1Binary compounds
1Cathodoluminescence
1Characterization
1Crystal doping
1Crystal growth
1Electric conductivity
1Epitaxial layers
1Gallium compounds
1Gallium phosphides
1High-frequency discharges
1Indium additions
1Indium arsenides
1Indium compounds
1Indium nitrides
1LPE
1Lattice parameters
1Measuring methods
1Microwave spectra
1Nanostructured materials
1Nitrides
1Phase studies
1Photoluminescence
1Planar doping
1Precipitation (chemical)
1SEM
1SIMS
1Silicon additions
1Superconductivity
1Temperature
1Temperature dependence
1Ternary compounds
1Thermal annealing
1XRD

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