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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « V. V. Toporov »
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V. V. Tomaev < V. V. Toporov < V. V. Travnikov  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 8.
Ident.Authors (with country if any)Title
000648 (2003) Inelastic inter-valence-band scattering of photoexcited holes in quantum dot structures
000C94 (1999-05) Quasielastic light scattering in the near IR from photoexcited electron-hole plasma created in a GaAs layer with embedded InAs quantum dots
000E63 (1998-06-10) Quasielastic scattering of light by a photoexcited electron-hole plasma induced in a GaAs layer in the presence of InAs quantum dots
000E89 (1998-03-10) Near-IR laser inelastic electronic light scattering spectroscopy on transitions between ground and excited states of acceptor centers in GaAs and InP crystals
001405 (1994-11-15) Discriminative temperature dependencies of differential light-scattering cross sections from an electron gas in semiconductors with a nonparabolic dispersion of energy bands
001433 (1994-06) Temperature dependence of the cross section for light scattering by charge carriers; observation of an acoustic plasmon (review)
001A33 (1989)
001A53 (1988) Theoretical and experimental study of Raman scattering and infrared reflectivity in indium phosphide

List of associated KwdEn.i

Nombre de
documents		Descripteur
6Experimental study
5Gallium arsenides
5Light scattering
4III-V semiconductors
3Indium compounds
3Infrared spectra
2Charge carrier concentration
2Excited states
2Indium Phosphides
2Indium phosphides
2Inorganic compound
2Measuring methods
2Raman scattering
2Semiconductor materials
2Semiconductor plasma
2Semiconductor quantum dots
2Temperature dependence
2Theoretical study
1Anomaly
1Band structure
1Binary compounds
1Carrier mobility
1Charge carrier injection
1Charge carrier mobility
1Charge carriers
1Cross sections
1Depolarization
1Differential cross sections
1Dispersion relations
1Doping
1Electron gas
1Electron hole plasma
1Fluctuations
1Free carrier
1Frequency dependence
1Ground states
1Impurity
1Impurity density
1Impurity states
1Indium arsenides
1Inelastic scattering
1Infrared reflection
1Interband transitions
1Interface states
1Iron
1Line intensity
1Monocrystals
1N-type conductors
1Near infrared radiation
1Optical properties
1Phonon
1Phonons
1Photoexcitation
1Plasmon
1Plasmons
1Polarization
1Quantum dots
1Raman effect
1Reviews
1Self-assembled layers
1Single crystal
1Sulfur
1Temperature range 0013-0065 K
1Temperature range 0065-0273 K
1Temperature range 0273-0400 K
1Tin
1Transport processes
1Valence bands

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HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/Author.i  \
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